FST6310M thru FST6335M
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 10 V to 40 V V
RRM
• Not ESD Sensitive
D61-3M Package
V
RRM
= 10 V - 40 V
I
F(AV)
= 60 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
FST6310M FST6315M FST6320M FST6330M FST6335M
10
7
10
-55 to 150
-55 to 150
Unit
V
V
V
°C
°C
15
11
20
14
20
-55 to 150
-55 to 150
30
21
35
25
35
-55 to 150
-55 to 150
15
-55 to 150
-55 to 150
30
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current (per
pkg)
Peak forward surge current
(per leg)
Maximum instantaneous
forward voltage (per leg)
Maximum Instantaneous
reverse current at rated DC
blocking voltage (per leg)
Symbol
I
F(AV)
I
FSM
V
F
I
R
Conditions
T
C
= 125 °C
t
p
= 8.3 ms, half sine
I
FM
= 30 A, T
j
= 25 °C
T
j
= 25 °C
T
j
= 100 °C
T
j
= 150 °C
FST6310M FST6315M FST6320M FST6330M FST6335M
60
600
0.70
1
10
30
60
600
7.0
1
10
30
60
600
0.70
1
10
30
60
600
0.70
1
10
30
60
600
0.70
1
10
30
Unit
A
A
V
mA
Thermal characteristics
Thermal resistance, junction -
case (per leg)
R
ΘJC
1.20
1.20
1.20
1.20
1.20
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1
FST6310M thru FST6335M
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
www.genesicsemi.com/silicon-products/schottky-rectifiers/
3
Embedded System
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