LM4050/LM4051_E_ _ _ ................................-40°C to +125°C
Storage Temperature Range .............................-65°C to +150°C
Junction Temperature ......................................................+150°C
Lead Temperature (soldering, 10s)..................................+300°C
Soldering Temperature (reflow) .......................................+260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS—1.225V
(I
R
= 100µA, T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 1)
PARAMETER
Reverse Breakdown Voltage
SYMBOL
V
R
T
A
= +25°C
LM4051A
Reverse Breakdown Voltage
Tolerance (Note 2)
Minimum Operating Current
Average Reverse Voltage
Temperature Coefficient
(Notes 2, 3)
Reverse Breakdown Voltage
Change with Operating
Current Change
Reverse Dynamic
Impedance (Note 3)
Wideband Noise
Reverse Breakdown Voltage
Long-Term Stability
Z
R
e
N
∆V
R
V
RTOL
I
RMIN
∆V
R
/∆T
I
R
= 10mA
I
R
= 1mA
I
R
= 100µA
I
RMIN
≤
I
R
≤
1mA
1mA
≤
I
R
≤
12mA
I
R
= 1mA, f = 120Hz, I
AC
= 0.1I
R
I
R
= 100µA, 10Hz
≤
f
≤
10kHz
T = 1000h
LM4051B
LM4051C
CONDITIONS
LM4051A (0.1%)
LM4051B (0.2%)
LM4051C (0.5%)
MIN
1.2238
1.2226
1.2189
TYP
1.2250
1.2250
1.2250
±1.2
±2.4
±6.0
45
±20
±15
±15
0.7
2.5
0.5
20
120
1.5
mV
8.0
1.5
Ω
µV
RMS
ppm
MAX
1.2262
1.2275
1.2311
±7
±9
±12
60
±50
µA
ppm/°C
mV
V
UNITS
2
Maxim Integrated
LM4050/LM4051
50ppm/°C Precision Micropower Shunt Voltage
References with Multiple Reverse Breakdown Voltages
ELECTRICAL CHARACTERISTICS—2.048V
(I
R
= 100µA, T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 1)
PARAMETER
Reverse Breakdown Voltage
SYMBOL
V
R
T
A
= +25°C
LM4050A
Reverse Breakdown Voltage
Tolerance (Note 2)
Minimum Operating Current
Average Reverse Voltage
Temperature Coefficient
(Notes 2, 3)
Reverse Breakdown Voltage
Change with Operating
Current Change
Reverse Dynamic
Impedance (Note 3)
Wideband Noise
Reverse Breakdown Voltage
Long-Term Stability
Z
R
e
N
∆V
R
V
RTOL
I
RMIN
∆V
R
/∆T
I
R
= 10mA
I
R
= 1mA
I
R
= 100µA
I
RMIN
≤
I
R
≤
1mA
1mA
≤
I
R
≤
15mA
I
R
= 1mA, f = 120Hz,
I
AC
= 0.1I
R
LM4050A/B
LM4050C
LM4050B
LM4050C
CONDITIONS
LM4050A (0.1%)
LM4050B (0.2%)
LM4050C (0.5%)
MIN
2.0460
2.0439
2.0378
TYP
2.0480
2.0480
2.0480
±2.0
±4.0
±10
45
±20
±15
±15
0.3
2.5
0.3
0.3
28
120
1.0
mV
8.0
0.8
0.9
Ω
µV
RMS
ppm
MAX
2.0500
2.0521
2.0582
±12
±14
±20
65
±50
µA
ppm/°C
mV
V
UNITS
I
R
= 100µA, 10Hz
≤
f
≤
10kHz
T = 1000h
Maxim Integrated
3
LM4050/LM4051
50ppm/°C Precision Micropower Shunt Voltage
References with Multiple Reverse Breakdown Voltages
ELECTRICAL CHARACTERISTICS—2.500V
(I
R
= 100µA, T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 1)
PARAMETER
Reverse Breakdown Voltage
SYMBOL
V
R
T
A
= +25°C
LM4050A
Reverse Breakdown Voltage
Tolerance (Note 2)
Minimum Operating Current
Average Reverse Voltage
Temperature Coefficient
(Notes 2, 3)
Reverse Breakdown Voltage
Change with Operating
Current Change
Reverse Dynamic
Impedance (Note 3)
Wideband Noise
Reverse Breakdown Voltage
Long-Term Stability
Z
R
e
N
∆V
R
V
RTOL
I
RMIN
I
R
= 10mA
∆V
R
/∆T
I
R
= 1mA
I
R
= 100µA
I
RMIN
≤
I
R
≤
1mA
1mA
≤
I
R
≤
15mA
I
R
= 1mA, f = 120Hz,
I
AC
= 0.1I
R
LM4050A/B
LM4050C
LM4050B
LM4050C
CONDITIONS
LM4050A (0.1%)
LM4050B (0.2%)
LM4050C (0.5%)
MIN
2.4975
2.4950
2.4875
TYP
2.5000
2.5000
2.5000
±2.5
±5.0
±13
45
±20
±15
±15
0.3
2.5
0.3
0.3
35
120
1.0
mV
8.0
0.8
0.9
Ω
µV
RMS
ppm
±50
ppm/°C
MAX
2.5025
2.5050
2.5125
±15
±18
±25
65
µA
mV
V
UNITS
I
R
= 100µA, 10Hz
≤
f
≤
10kHz
T = 1000h
4
Maxim Integrated
LM4050/LM4051
50ppm/°C Precision Micropower Shunt Voltage
References with Multiple Reverse Breakdown Voltages
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