SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTOR
ISSUE 2 - JANUARY 1996
FEATURES
* Extremely low equivalent on-resistance;
R
CE(sat)
36mΩ at 5A
*
7 Amp
continuous collector current (20 Amp peak)
* Very low saturation voltages
* Excellent gain charateristics specified upto 20 Amp
*
P
tot
=3 Watts
PARTMARKING DETAILS -
FZT869
FZT869
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
60
25
6
20
7
3
-55 to +150
UNIT
V
V
V
A
A
W
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 inch square minimum
3 - 271
FZT869
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltag
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
SYMBOL
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CER
R
≤
1k
Ω
I
EBO
V
CE(sat)
35
67
168
MIN.
60
60
25
6
TYP.
120
120
35
8
50
1
50
1
10
50
110
215
350
1.2
1.13
300
300
200
40
450
450
300
100
100
70
60
680
MHz
pF
ns
ns
MAX.
UNIT
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
V
V
CONDITIONS.
I
C
=100
µ
A
I
C
=1
µ
A, RB
≤
1k
Ω
I
C
=10mA*
I
E
=100
µ
A
V
CB
=50V
V
CB
=50V, T
amb
=100°C
V
CB
=50V
V
CB
=50V, T
amb
=100°C
V
EB
=6V
I
C
=0.5A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=10mA*
I
C
=6.5A, I
B
=150mA*
I
C
=6.5A, I
B
=300mA
I
C
=6.5A, V
CE
=1V*
I
C
=10mA, V
CE
=1V
I
C
=1A, V
CE
=1V*
I
C
=7A, V
CE
=1V*
I
C
=20A, V
CE
=2V*
I
C
=100mA, V
CE
=10V
f=50MHz
V
CB
=10V, f=1MHz*
I
C
=1A, I
B1
=100mA
I
B2
=100mA, V
CC
=10V
µ
A
µ
A
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward
Current Transfer Ratio
V
BE(sat)
V
BE(on)
h
FE
Transition Frequency
Output Capacitance
Switching Times
f
T
C
obo
t
on
t
off
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
3 - 272
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