AUTOMOTIVE GRADE
AUIRFS3207Z
AUIRFSL3207Z
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
D
D
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
75V
3.3m
4.1m
170A
120A
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications
Base part number
AUIRFSL3207Z
AUIRFS3207Z
Package Type
TO-262
D
2
-Pak
S
G
D Pak
AUIRFS3207Z
2
G
TO-262
S
D
AUIRFSL3207Z
G
Gate
D
Drain
S
Source
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRFSL3207Z
AUIRFS3207Z
AUIRFS3207ZTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
E
AS
I
AR
E
AR
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
170
120
120
670
300
2.0
± 20
16
170
See Fig.14,15, 22a, 22b
-55 to + 175
300
Units
A
W
W/°C
V
V/ns
mJ
A
mJ
°C
Thermal Resistance
Symbol
R
JC
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mount), D
2
Pak
Typ.
–––
–––
Max.
0.50
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-10-27
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
R
DS(on)
V
GS(th)
gfs
R
G
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
Min.
75
–––
–––
2.0
280
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
3.3
–––
–––
0.80
–––
–––
–––
–––
120
27
33
87
20
68
55
68
6920
600
270
770
960
–––
4.1
4.0
–––
–––
20
250
100
-100
170
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
0.091 –––
AUIRFS/SL3207Z
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 5mA
m V
GS
= 10V, I
D
= 75A
V
V
DS
= V
GS
, I
D
= 150µA
S V
DS
= 50V, I
D
= 75A
V
DS
= 75V, V
GS
= 0V
µA
V
DS
= 75V,V
GS
= 0V,T
J
=125°C
nA
V
GS
= 20V
V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
D
= 75A
V
DS
= 38V
nC
V
GS
= 10V
V
DD
= 49V
I
D
= 75A
ns
R
G
= 2.7
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
pF
ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 60V
V
GS
= 0V, V
DS
= 0V to 60V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 75A,V
GS
= 0V
T
J
= 25°C
V
DD
= 64V
ns
T
J
= 125°C
I
F
= 75A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Q
rr
I
RRM
t
on
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Typ. Max. Units
––– 170
–––
–––
36
41
50
67
2.4
670
1.3
54
62
75
100
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax,
starting T
J
= 25°C, L = 0.033mH, R
G
= 25, I
AS
= 102A, V
GS
=10V. Part not recommended for use above this value.
I
SD
75A,
di/dt
1730A/µs,
V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs;
duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R
is measured at T
J
approximately 90°C.
2
2015-10-27
AUIRFS/SL3207Z
1000
TOP
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
1000
TOP
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
BOTTOM
BOTTOM
100
4.5V
100
4.5V
60µs PULSE WIDTH
Tj = 25°C
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 175°C
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
1000
Fig. 2
Typical Output Characteristics
2.5
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 75A
2.0
VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 175°C
T J = 25°C
10
1.5
1
VDS = 25V
60µs
PULSE WIDTH
0.1
2
3
4
5
6
7
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig. 3
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig. 4
Normalized On-Resistance vs. Temperature
12.0
ID= 75A
VGS, Gate-to-Source Voltage (V)
10.0
8.0
6.0
4.0
2.0
0.0
C, Capacitance (pF)
10000
C iss
VDS = 60V
VDS = 38V
VDS = 15V
Coss
1000
Crss
100
1
10
VDS , Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
120
140
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
2015-10-27
1000
10000
AUIRFS/SL3207Z
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
T J = 175°C
1000
100
10msec
100µsec
10
T J = 25°C
1msec
10
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
VSD , Source-to-Drain Voltage (V)
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
VDS , Drain-to-Source Voltage (V)
100
0.1
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
180
160
140
ID, Drain Current (A)
Fig 8.
Maximum Safe Operating Area
100
Id = 5mA
95
90
85
80
75
70
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Temperature ( °C )
Limited By Package
120
100
80
60
40
20
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 9.
Maximum Drain Current vs. Case Temperature
2.5
Fig 10.
Drain-to-Source Breakdown Voltage
700
EAS , Single Pulse Avalanche Energy (mJ)
600
500
400
300
200
100
0
25
50
75
100
2.0
ID
TOP
17A
30A
BOTTOM 102A
Energy (µJ)
1.5
1.0
0.5
0.0
-10
0
10
20
30
40
50
60
70
80
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 11.
Typical C
OSS
Stored Energy
4
Fig 12.
Maximum Avalanche Energy vs. Drain Current
2015-10-27
1
AUIRFS/SL3207Z
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
J
J
1
R
1
R
1
2
R
2
R
2
R
3
R
3
C
1
2
3
3
Ri (°C/W)
0.1049
0.2469
0.1484
I
(sec)
0.000099
0.001345
0.008469
Ci=
iRi
Ci=
iRi
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle =
Single Pulse
Avalanche Current (A)
100
0.01
0.05
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 150°C and
Tstart =25°C (Single Pulse)
10
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Avalanche Current vs. Pulse width
200
180
EAR , Avalanche Energy (mJ)
160
140
120
100
80
60
40
20
0
25
50
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 102A
75
100
125
150
175
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as T
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 13, 14).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
T/
Z
thJC
I
av
= 2T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Starting T J , Junction Temperature (°C)
Fig 15.
Maximum Avalanche Energy vs. Temperature
5
2015-10-27
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