VS-85HF(R)40M8
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Vishay Semiconductors
Standard Recovery Diodes,
(Stud Version), 85 A
FEATURES
• High surge current capability
• Stud cathode and stud anode version
• Leaded version available
• Types up to 400 V V
RRM
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DO-203AB (DO-5)
TYPICAL APPLICATIONS
• Battery chargers
• Converters
85 A
PRODUCT SUMMARY
I
F(AV)
Package
Circuit configuration
DO-203AB (DO-5)
Single diode
• Power supplies
• Machine tool controls
• Welding
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
85HF(R)
400
85
T
C
50 Hz
60 Hz
50 Hz
60 Hz
Range
140
133
1700
1800
14 500
13 500
400
-65 to 180
UNITS
A
°C
A
A
A
2
s
V
°C
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-85HF(R)
VOLTAGE
CODE
40
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
9
Revision: 12-Feb-14
Document Number: 93529
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-85HF(R)40M8
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one-cycle forward, non-repetitive
surge current
SYMBOL
I
F(AV)
I
F(RMS)
t = 10 ms
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I
2
t
for fusing
I
2
t
Value of threshold voltage
(up to 1200 V)
Value of threshold voltage
(for 1400 V, 1600 V)
Value of forward slope resistance
(up to 1200 V)
Value of forward slope resistance
(for 1400 V, 1600 V)
Maximum forward voltage drop
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
TEST CONDITIONS
180° conduction, half sine wave
85HF(R)
85
140
133
1700
1800
1450
Sinusoidal half wave,
initial T
J
= T
J
maximum
1500
14 500
13 500
10 500
9400
16 000
0.68
V
F(TO)
T
J
= T
J
maximum
0.69
1.62
r
f
V
FM
T
J
= T
J
maximum
1.75
I
pk
= 267 A, T
J
= 25 °C, t
p
= 400 μs rectangular wave
1.2
V
mW
V
A
2
s
A
2
s
A
UNITS
A
°C
A
t = 0.1 ms to 10 ms, no voltage reapplied
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating and
storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Not lubricated thread, tighting on nut
Maximum allowable mounting torque + 0 %, - 10 %
Lubricated thread, tighting on nut
Not lubricated thread, tighting on hexagon
Lubricated thread, tighting on hexagon
Approximate weight
Case style
Unleaded device
See dimensions - link at the end of datasheet
TEST CONDITIONS
85HF(R)
-65 to 180
0.35
0.25
3.4 (30)
2.3 (20)
4.2 (37)
3.2 (28)
17
0.6
g
oz.
N·m
(lbf · in)
UNITS
°C
K/W
DO-203AB (DO-5)
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.10
0.11
0.13
0.17
0.26
RECTANGULAR CONDUCTION
0.08
0.11
0.13
0.17
0.26
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 12-Feb-14
Document Number: 93529
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-85HF(R)40M8
www.vishay.com
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
180
85HF(R)
R
thJC
(DC) = 0.35 K/W
Maximum Allowable Case Temperature (°C)
1 80
85HF(R)
R
thJC
(DC) = 0.35 K/W
1 70
Conduction Angle
170
Conduction Period
1 60
160
1 50
30°
1 40
60°
90°
120°
180°a
1 30
0
10
20
30
40
50
60
70
80
90
100
150
30°
140
60°
90°
120°
180°
130
0
20
40
60
80
100
120
140
DC
I
F(AV)
- Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
I
F(AV)
- Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
90
Maximum Average Forward
Power Loss (W)
80
70
60
50
40
30
20
10
0
0
10
20
180°
120°
90°
60°
30°
RMS Limit
1
7
0.
=0
A
h
S
Rt
W
K/
1.
W
K/
5
2K
/W
K/
W
.5
W
K/
3K
-D
/W
a
elt
R
Conduction Angle
85HF(R)
Tj = 180˚C
5 K/
W
10 K/W
30
40
50
60
70
80
90
20
40
60
80 100 120 140 160 180
I
F(AV)
- Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
120
Maximum Average Forward
Power Loss (W)
100
80
DC
180°
120°
90°
60°
30°
7
0.
=
A
h
S
Rt
W
1
K
/W
K/
0.
1.5
5
K/
K/
W
W
2K
-D
/W
elt
60 RMS Limit
40
20
0
0
20
40
60
80
100
120
140
Conduction Period
85HF(R)
Tj = 180˚C
a
3K
R
/W
5 K/W
10 K/W
20
40
60
80
100
120 140 160 180
I
F(AV)
- Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
Revision: 12-Feb-14
Document Number: 93529
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-85HF(R)40M8
www.vishay.com
Vishay Semiconductors
Instantaneous Forward Current (A)
10 000
Tj = 25°C
Tj = Tj Max.
1000
Peak Half
Sine
Wave Forward Current (A)
1600
1400
1200
1000
800
600
400
1
At Any Rated Load Condition And With
Rated Vrrm Applied Following
Surge.
Initial Tj = Tj Max.
@ 60 Hz 0.0083
s
@ 50 Hz 0.0100
s
100
85HF(R)
85HF(R)
10
0
1
2
3
4
5
6
10
100
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Peak Half
Sine
Wave Forward Current (A)
Z
thJC
- Transient Thermal Impedance (K/W)
1800
1600
1400
1200
1000
800
600
400
Maximum Non Repetitive
Surge
Current
Versus Pulse Train Duration.
Initial Tj = Tj Max.
No Voltage Reapplied
Rated Vrrm Reapplied
10
Steady State
Value
R
thJC
= 0.35 K/W
1
(DC Operation)
0.1
0.01
85HF(R)
0.001
0.0001
85HF(R)
0.1
1
200
0.01
0.001
0.01
0.1
1
10
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
t -
Square
Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
85
2
-
-
-
-
-
-
HF
3
R
4
40
5
M8
6
Vishay Semiconductors product
85 = Standard device
HF = Standard diode
None = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
Voltage code x 10 = V
RRM
(see Voltage Ratings table)
M8 = Stud base DO-203AB (DO-5) M8 x 1.25
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95342
Revision: 12-Feb-14
Document Number: 93529
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
DO-203AB (DO-5) for 85HF(R) and 86HF(R) Series
DIMENSIONS
in millimeters (inches)
Ø 15.1 (0.59)
6.1/7
(0.24/0.27)
4 (0.16)
4 (0.16) MIN.
25.4 (1) MAX.
10.8 (0.42)
11.4 (0.45)
11.1 ± 0.4
(0.44 ± 0.02)
1/4" 28UNF-2A
For metric devices: M8 x 1.25
M6 x 1
1.20 (0.04)
17.35 (0.68)
Revision: 06-Dec-16
Document Number: 95342
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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