monolithic video switches designed for switching wide
bandwidth analog and digital signals. DG641 is a quad
SPST, DG642 is a single SPDT, and DG643 is a dual SPDT
function. These devices have exceptionally low
on-resistances (5
typ-DG642),
low capacitance and high
current handling capability.
To achieve TTL compatibility, low channel capacitances and
fast switching times, the DG641, DG642, DG643 are built on
the Vishay Siliconix proprietary D/CMOS process. Each
switch conducts equally well in both directions when on, and
blocks up to 14 V
p-p
when off. An epitaxial layer prevents
latchup.
FEATURES
•
•
•
•
•
•
Wide bandwidth: 500 MHz
Low crosstalk at 5 MHz: - 85 dB
Low R
DS(on)
: 5
,
DG642
TTL logic compatible
Fast switching: t
ON
50 ns
Single supply compatibility
•
High current: 100 mA, DG642
High precision
Improved frequency response
Low insertion loss
Improved system performance
Reduced board space
Low power consumption
RF and video switching
RGB switching
Video routing
Cellular communications
ATE
Radar/FLIR systems
Satellite receivers
Programmable filters
BENEFITS
•
•
•
•
•
•
•
•
•
•
•
•
•
•
APPLICATIONS
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Dual-In-Line and SOIC
IN
1
D
1
S
1
V-
GND
S
4
D
4
IN
4
1
2
3
4
DG641
5
6
7
8
Top View
16 IN
2
15 D
2
14 S
2
13 V+
12 GND
11 S
3
10 D
3
9
IN
3
S
1
D
1
V
-
GND
IN
1
Dual-In-Line and SOIC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
IN
2
D
2
GND
S
2
V+
S
3
GND
D
3
Dual-In-Line and SOIC
D
1
1
2
3
4
8
7
6
IN
V+
D
2
S
2
GND
S
1
V
-
S
4
GND
Top View
D
4
DG642
5
DG643
Top View
9
TRUTH TABLE
(DG641)
Logic
0
1
Logic “0”
0.8
V
Logic “1”
2.4 V
Document Number: 70058
S11-0154-Rev. F, 31-Jan-11
Switch
OFF
ON
TRUTH TABLE
(DG642)
Logic
0
1
Logic “0”
0.8
V
Logic “1”
2.4 V
SW
1
OFF
ON
SW
2
ON
OFF
TRUTH TABLE
(DG643)
Logic
0
1
SW
1
, SW
2
OFF
ON
SW
3
, SW
4
ON
OFF
Logic “0”
0.8
V
Logic “1”2.4 V
www.vishay.com
1
DG641, DG642, DG643
Vishay Siliconix
ORDERING INFORMATION
Temp. Range
DG641
- 40 °C to 85 °C
DG642
- 40 °C to 85 °C
DG643
- 40 °C to 85 °C
16-Pin Plastic DIP
16-Pin Narrow SOIC
DG643DJ
DG643DY
8-Pin Plastic DIP
8-Pin Narrow SOIC
DG642DJ
DG642DY
16-Pin Plastic DIP
16-Pin Narrow SOIC
DG641DJ
DG641DY
Package
Part Number
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
V+ to V-
V+ to GND
V- to GND
Digital Inputs
V
S
, V
D
Continuous Current (Any terminal except S or D)
Continuous Current S or D
Current, S or D
(Pulsed at 1 ms, 10 % duty cycle max)
Storage Temperature
8-Pin Plastic DIP and Narrow
Power Dissipation
(Package)
b
16-Pin Plastic DIP
d
e
Symbol
Limit
- 0.3 to 21
- 0.3 to 21
- 19 to + 0.3
(V-) - 0.3 V to (V+) + 0.3 V
or 20 mA, whichever occurs first
(V-) - 0.3 V to (V+) + 14 V
or 20 mA, whichever occurs first
20
75
100
200
300
- 65 to 125
Unit
V
DG641, DG643
DG642
DG641, DG643
DG642
SOIC
c
mA
°C
mW
300
470
600
16-Pin Narrow SOIC
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 7.6 mW/°C above 75 °C.
d. Derate 6 mW/°C above 75 °C.
e. Derate 80 mW/°C above 75 °C.
SCHEMATIC DIAGRAM
(Typical Channel)
V+
5V
Reg
S
GND
IN
D
V-
Figure 1.
www.vishay.com
2
Document Number: 70058
S11-0154-Rev. F, 31-Jan-11
DG641, DG642, DG643
Vishay Siliconix
SPECIFICATIONS
(for DG641 and DG643)
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 3 V
V
INH
= 2.4 V, V
INL
= 0.8 V
e
V- = - 5 V, V+ = 12 V
V- = GND V, V+ = 12 V
I
S
= - 10 mA, V
D
= 0 V
V
S
= 0 V, V
D
= 10 V
V
S
= 10 V, V
D
= 0 V
V
S
= V
D
= 0 V
Limits
- 40 °C to 85 °C
Temp.
a
Full
Full
Room
Full
Room
Room
Full
Room
Full
Room
Full
Full
Full
Room
Full
Room
Room
Room
Room
Room
Full
Room
Full
Room
Room
Room
Min.
b
-5
0
8
1
- 10
- 100
- 10
- 100
- 10
- 100
2.4
-1
- 20
0.05
0.8
1
20
20
12
12
MHz
70
140
50
85
pF
- 0.02
- 0.02
- 0.1
Typ.
c
Max.
b
8
8
15
20
2
10
100
10
100
10
100
Unit
Parameter
Analog Switch
Analog Signal Range
d
Drain-Source On-Resistance
R
DS(on)
Match
Source Off Leakage Current
Drain Off Leakage Current
Channel On Leakage Current
Digital Control
Input Voltage High
Input Voltage Low
Input Current
Dynamic Characteristics
On State Input Capacitance
d
Off State Output Capacitance
Off State Input Capacitance
Bandwidth
Turn On Time
Turn Off Time
Charge Injection
Off Isolation
All Hostie Crosstalk
Power Supplies
Positive Supply Current
Negative Supply Current
d
d
Symbol
V
ANALOG
R
DS(on)
R
DS(on)
I
S(off)
I
D(off)
I
D(on)
V
INH
V
INL
I
IN
C
S(on)
C
S(off)
C
D(off)
BW
t
ON
t
OFF
Q
OIRR
X
TALK
V
nA
V
µA
V
IN
= GND or V+
V
S
= V
D
= 0 V
V
S
= 0 V
V
D
= 0 V
R
L
= 50
see
figure 6
R
L
= 1 kC
L
= 35 pF
see figure 2
C
L
= 1000 pF, V
D
= 0 V
see figure 3
R
IN
= 75
R
L
= 75
f = 5 MHz, see figure 4
R
IN
= 10
,
R
L
= 75
f = 5 MHz, see figure 5
10
4
4
500
50
28
- 19
- 60
ns
pC
dB
- 87
I+
V
IN
= 0 V or V
IN
= 5 V
I-
Room
Full
Room
Full
3.5
-6
-9
-3
6
9
mA
Notes:
a. Room = 25 °C, Full = as determined by the operating temperature suffix.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guaranteed by design, not subject to production test.
e. V
IN
= input voltage to perform proper function.
Document Number: 70058
S11-0154-Rev. F, 31-Jan-11
www.vishay.com
3
DG641, DG642, DG643
Vishay Siliconix
SPECIFICATIONS
(for DG642)
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 3 V
V
INH
= 2.4 V, V
INL
= 0.8 V
e
V- = - 5 V, V+ = 12 V
V- = GND V, V+ = 12 V
I
S
= - 10 mA, V
D
= 0 V
V
S
= 0 V, V
D
= 10 V
V
S
= 10 V, V
D
= 0 V
V
S
= V
D
= 0 V
Limits
- 40 °C to 85 °C
Temp.
a
Full
Full
Room
Full
Room
Room
Full
Room
Full
Room
Full
Full
Full
Room
Full
Room
Room
Room
Room
Room
Full
Room
Full
Room
Room
Room
Min.
b
-5
0
5
0.5
- 10
- 200
- 10
- 200
- 10
- 200
2.4
-1
- 20
0.05
0.8
1
20
40
20
20
MHz
100
160
60
100
pF
- 0.04
- 0.04
- 0.2
Typ.
c
Max.
b
8
8
8
9
1
10
200
10
200
10
200
Unit
Parameter
Analog Switch
Analog Signal Range
d
Drain-Source On-Resistance
R
DS(on)
Match
Source Off Leakage Current
Drain Off Leakage Current
Channel On Leakage Current
Digital Control
Input Voltage High
Input Voltage Low
Input Current
Dynamic Characteristics
On State Input Capacitance
d
Off State Input Capacitance
Bandwidth
Turn On Time
Turn Off Time
Charge Injection
Off Isolation
All Hostie Crosstalk
Power Supplies
Positive Supply Current
Negative Supply Current
d
d
Symbol
V
ANALOG
R
DS(on)
R
DS(on)
I
S(off)
I
D(off)
I
D(on)
V
INH
V
INL
I
IN
C
S(on)
C
S(off)
C
D(off)
BW
t
ON
t
OFF
Q
V
nA
V
µA
V
IN
= GND or V+
V
S
= V
D
= 0 V
V
D
= 0 V
V
S
= 0 V
R
L
= 50
see
figure 6
R
L
= 1 kC
L
= 35 pF
see figure 2
C
L
= 1000 pF, V
D
= 0 V
see figure 3
R
IN
= 75
R
L
= 75
f = 5 MHz, see figure 4
R
IN
= 10
,
R
L
= 75
f = 5 MHz, see figure 5
19
8
8
500
60
40
- 40
- 63
Off State Output Capacitance
ns
pC
dB
- 85
X
TALK(AH)
I+
V
IN
= 0 V or V
IN
= 5 V
I-
Room
Full
Room
Full
3.5
-6
-9
-3
6
9
mA
Notes:
a. Room = 25 °C, Full = as determined by the operating temperature suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. Guaranteed by design, not subject to production test.
e. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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