EEWORLDEEWORLDEEWORLD

Part Number

Search

BF246B_J35Z

Description
JFET N-CHNL FET SWITCH
Categorysemiconductor    Discrete semiconductor   
File Size97KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

BF246B_J35Z Online Shopping

Suppliers Part Number Price MOQ In stock  
BF246B_J35Z - - View Buy Now

BF246B_J35Z Overview

JFET N-CHNL FET SWITCH

BF246B_J35Z Parametric

Parameter NameAttribute value
Product CategoryJFET
ManufacturerFairchild
RoHSDetails
Mounting StyleThrough Hole
Package / CaseTO-92
Transistor PolarityN-Channel
ConfigurationSingle
Vgs - Gate-Source Breakdown Voltage- 25 V
PackagingBulk
Factory Pack Quantity2000
Unit Weight0.007090 oz
BF246B N-Channel Switch
BF246B
N-Channel Switch
• This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers.
• Sourced from process 51.
• See J111 for characteristics.
TO-92
DGS
1. Drain 2. Gate 3. Source
Absolute Maximum Ratings*
Symbol
V
DG
V
GS
I
GF
T
J
, T
STG
Notes:
T
a
= 25°C unless otherwise noted
Parameter
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Value
25
-25
50
-55 ~ 150
Units
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may e impaired.
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Symbol
Off Characteristics
V
(BR)GSS
I
GSS
V
GS(off)
I
DSS
T
a
= 25°C unless otherwise noted
Parameter
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
Zero-Gate Voltage Drain Current *
a
Conditions
I
G
= 1.0µA, V
DS
= 0
V
GS
= -15V, V
DS
= 0
V
DS
= 15V, I
D
= 10nA
V
DS
= 15V, V
GS
= 0
Min.
-25
Max
Units
V
-5.0
-0.6
60
-14.5
140
nA
V
mA
On Characteristics*
Thermal Characteristics
T
Symbol
P
D
R
θJC
R
θJA
Total Device Dissipation
= 25°C unless otherwise noted
Parameter
Value
625
5.0
125
357
Units
mW
mW/°C
°C/W
°C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
BF246B Rev. A

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1148  250  1637  846  305  24  6  33  18  7 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号