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FMK75-01F

Description
MOSFET 75 Amps 100V
Categorysemiconductor    Discrete semiconductor   
File Size46KB,2 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
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MOSFET 75 Amps 100V

FMK75-01F Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerIXYS ( Littelfuse )
RoHSDetails
TechnologySi
Mounting StyleThrough Hole
Package / CaseISOPLUS-i4-PAK-5
Number of Channels2 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current75 A
Rds On - Drain-Source Resistance25 mOhms
Vgs - Gate-Source Voltage20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationDual Common Drain Source
Channel ModeEnhancement
PackagingTube
Fall Time60 ns
Height20.88 mm
Length19.91 mm
Rise Time60 ns
Factory Pack Quantity24
Transistor Type2 N-Channel
TypeDual Switch Common Source MOSFET Modules
Typical Turn-Off Delay Time80 ns
Typical Turn-On Delay Time20 ns
Width5.03 mm
Unit Weight0.229281 oz
FMK 75-01F
HiPerFET
TM
Power MOSFET
Common Source Topology
in ISOPLUS i4-PAC
TM
Preliminary data
4
5
3
1
2
T2
T1
I
D25
= 75 A
= 100 V
V
DSS
R
DSon typ.
= 18 mΩ
1
5
MOSFET T1/T2
Symbol
V
DSS
V
GS
I
D25
I
D90
I
F25
I
F90
dv/dt
E
AR
Symbol
T
C
= 25°C
T
C
= 90°C
(body diode) T
C
= 25°C
(body diode) T
C
= 90°C
V
DS
< V
DSS
; I
F
300A;⎮di
F
/dt⎮≤ 100A/µs; R
G
= 2
T
VJ
= 150°C
T
C
= 25°C
Conditions
(T
VJ
R
DSon
V
GSth
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
F
t
rr
R
thJC
R
thJH
V
GS
= 10 V; I
D
= I
D90
V
DS
= 20 V; I
D
= 4 mA
V
DS
= V
DSS
; V
GS
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
GS
= ±20 V; V
DS
= 0 V
V
GS
= 10 V; V
DS
= 0.5 • V
DSS
; I
D
= I
D90
180
35
85
20
60
80
60
1.2
300
0.93
1.5
2
0.25
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
100
±20
75
50
100
60
5
30
V
V
A
A
A
A
V/ns
mJ
Features
• HiPerFET
TM
technology
- low R
DSon
- low gate charge for high frequency
operation
- unclamped inductive switching (UIS)
capability
- dv/dt ruggedness
- fast intrinsic reverse diode
• ISOPLUS i4-PAC
TM
package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered E 72873
Applications
drives and power supplies
battery or fuel cell powered
automotive, industrial vehicle etc.
secondary side of mains power
supplies
Characteristic Values
= 25°C, unless otherwise specified)
min.
typ. max.
18
25 mΩ
4
V
0.3 mA
mA
200 nA
nC
nC
nC
ns
ns
ns
ns
V
ns
0.5 K/W
K/W
V
GS
= 10 V; V
DS
= 0.5 • V
DSS
I
D
= I
D90
; R
G
= 2
(body diode) I
F
= 75 A; V
GS
= 0 V
(body diode) I
F
= 37.5A; -di/dt = 100A/µs; V
DS
= 25V
with heat transfer paste
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
1-2
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