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ASIMSC1015M

Description
NPN SILICON RF POWER TRANSISTOR
File Size35KB,1 Pages
ManufacturerASI [ASI Semiconductor, Inc]
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ASIMSC1015M Overview

NPN SILICON RF POWER TRANSISTOR

MSC1015M
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .280 2L FLG
DESCRIPTION:
The
ASI MSC1015M
is Designed for
Class C, DME/TACAN Applications up
to 1150 MHz.
3
2
1
FEATURES:
Class C Operation
P
G
= 10 dB at 15 W/1150 MHz
Omnigold™
Metalization System
MAXIMUM RATINGS
I
C
V
CB
P
DISS
T
J
T
STG
θ
JC
1.25 A
PEAK
50 V
88 W
PEAK
-65 °C to +200 °C
-65 °C to +150 °C
2.0 °C/W
1 = Collector
2 = Emitter
3 = Base
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CER
BV
EBO
I
CES
h
FE
P
G
η
C
I
C
= 10 mA
I
C
= 10 mA
I
E
= 1.0 mA
V
CB
= 50 V
V
CE
= 5.0 V
T
C
= 25 °C
NONETEST
CONDITIONS
R
BE
= 10
MINIMUM TYPICAL MAXIMUM
65
65
3.5
2.5
UNITS
V
V
V
mA
---
dB
%
I
C
= 500 mA
P
OUT
= 15 W
f = 1025 – 1150 MHz
15
10
35
120
V
CC
= 50 V
P
IN
= 1.5 W
Pulse width = 10 µSec, Duty Cycle = 1 %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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