NTD24N06-001 datasheet, PDF - EEWORLD Datasheet

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NTD24N06-001: DescriptionMOSFET 24V 60A N-Channel; Categorysemiconductor Discrete semiconductor; File Size78KB，8 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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NTD24N06-001 Overview

MOSFET 24V 60A N-Channel

NTD24N06-001 Parametric

Parameter Name	Attribute value
Product Category	MOSFET
Manufacturer	ON Semiconductor
RoHS	No
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-247-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	24 A
Rds On - Drain-Source Resistance	32 mOhms
Vgs - Gate-Source Voltage	20 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C
Configuration	Single
Channel Mode	Enhancement
Packaging	Tube
Fall Time	27 ns
Forward Transconductance - Min	15 S
Pd - Power Dissipation	62.5 W
Rise Time	24 ns
Factory Pack Quantity	75
Transistor Type	1 N-Channel
Type	MOSFET
Typical Turn-Off Delay Time	25 ns
Typical Turn-On Delay Time	10 ns
Unit Weight	0.139332 oz

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NTD24N06

Power MOSFET

60 Volt, 24 Amp

N−Channel DPAK

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

Features

http://onsemi.com

(BR)DSS

60 V

DS(on)

TYP

32 mW

N−Channel

MAX

24 A

•

Pb−Free Packages are Available

Typical Applications

•

Power Supplies

Converters

Power Motor Controls

Bridge Circuits

MAXIMUM RATINGS

= 25°C unless otherwise noted)

Rating

Drain−to−Source Voltage

Drain−to−Gate Voltage (R

= 10 MW)

Gate−to−Source Voltage

− Continuous

− Non−repetitive (t

v10

ms)

Drain Current

− Continuous @ T

= 25°C, T

= 150°C

− Continuous @ T

= 25°C, T

= 175°C

− Continuous @ T

= 100°C, T

= 175°C

− Single Pulse (t

v10

ms),

= 175°C

Total Power Dissipation @ T

= 25°C

Derate above 25°C

Total Power Dissipation @ T

= 25°C (Note 1)

Total Power Dissipation @ T

= 25°C (Note 2)

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche

Energy − Starting T

= 25°C

= 50 Vdc, V

= 10 Vdc,

L = 1.0 mH, I

(pk) = 18 A, V

= 60 Vdc)

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

Maximum Lead Temperature for Soldering

Purposes, 1/8 in from case for 10 seconds

Symbol

DSS

DGR

Value

"20

"30

62.5

0.42

1.88

1.36

−55 to

+175

162

Unit

Vdc

1 2

Adc

Apk

W/°C

°C

DPAK

CASE 369C

(Surface Mount)

STYLE 2

YWW

N06G

Drain

Gate

Source

Drain

YWW

N06G

DPAK

CASE 369D

(Straight Lead)

STYLE 2

24N06

1 2 3

Gate Drain Source

= Year

= Work Week

= Device Code

= Pb−Free Package

Publication Order Number:

NTD24N06/D

MARKING DIAGRAMS

& PIN ASSIGNMENTS

Drain

, T

stg

°C/W

qJC

qJA

2.4

110

260

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. When surface mounted to an FR−4 board using the 0.5 sq in drain pad size.

2. When surface mounted to an FR−4 board using the minimum recommended

pad size.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Semiconductor Components Industries, LLC, 2005

August, 2005 − Rev. 4

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