IRFH8324PbF
V
DS
V
gs
max
30
± 20
4.1
6.3
14
50
V
V
mΩ
nC
A
HEXFET
®
Power MOSFET
R
DS(on) max
(@V
GS
= 10V)
(@V
GS
= 4.5V)
Q
g typ.
I
D
(@T
c(Bottom)
= 25°C)
i
PQFN 5X6 mm
Applications
•
Synchronous MOSFET for high frequency buck converters
Features and Benefits
Features
Low Thermal Resistance to PCB (< 2.3°C/W)
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Benefits
Enable better thermal dissipation
results in Increased Power Density
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH8324TRPBF
IRFH8324TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice #259
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Max.
30
± 20
23
18
90
Units
V
g
Power Dissipation
g
Power Dissipation
c
hi
57
hi
50
i
200
3.6
54
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
g
0.029
-55 to + 150
Storage Temperature Range
Notes
through
are on page 9
1
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2015 International Rectifier
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June 2, 2015
IRFH8324PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
72
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.019
3.3
5.0
1.8
-6.2
–––
–––
–––
–––
–––
31
14
4.4
2.2
3.5
3.9
5.7
13
1.1
13
26
14
8.5
2380
500
205
Max. Units
–––
–––
4.1
6.3
2.35
–––
1.0
150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
V
Conditions
V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 20A
mΩ
V
GS
= 4.5V, I
D
= 16A
V
V
DS
= V
GS
, I
D
= 50μA
mV/°C
e
e
μA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 20A
V
GS
= 10V, V
DS
= 15V, I
D
= 20A
V
DS
= 15V
V
GS
= 4.5V
I
D
= 20A
nA
S
nC
nC
nC
Ω
ns
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 20A
R
G
=1.8Ω
V
GS
= 0V
pF
V
DS
= 10V
ƒ = 1.0MHz
Max.
94
20
Units
mJ
A
Avalanche Characteristics
E
AS
I
AR
d
Min.
–––
–––
–––
–––
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Typ.
–––
–––
–––
16
Max. Units
50
Conditions
MOSFET symbol
D
i
A
V
ns
Ã
200
1.0
24
showing the
integral reverse
G
S
–––
25
38
nC
Time is dominated by parasitic Inductance
p-n junction diode.
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
T
J
= 25°C, I
F
= 20A, V
DD
= 15V
di/dt = 360 A/μs
e
eÃ
Thermal Resistance
R
θJC
(Bottom)
R
θJC
(Top)
R
θJA
R
θJA
(<10s)
f
Junction-to-Case
f
Junction-to-Case
Parameter
g
Junction-to-Ambient
g
Junction-to-Ambient
Typ.
–––
–––
–––
–––
Max.
2.3
32
35
23
Units
°C/W
2
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2015 International Rectifier
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June 2, 2015
IRFH8324PbF
1000
TOP
VGS
10V
7.0V
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
1000
TOP
VGS
10V
7.0V
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
1
2.5V
2.5V
≤
60μs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
1
0.1
1
≤
60μs PULSE WIDTH
Tj = 150°C
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
1.8
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
1.6
1.4
1.2
1.0
0.8
0.6
ID = 20A
VGS = 10V
T J = 150°C
100
10
T J = 25°C
VDS = 15V
≤60μs
PULSE WIDTH
1
2
3
4
5
6
7
8
1.0
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 20A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
C, Capacitance (pF)
Ciss
C oss = C ds + C gd
VDS= 24V
VDS= 15V
VDS= 6.0V
1000
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
5
10
15
20
25
30
35
40
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
3
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Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
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IRFH8324PbF
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100
T J = 150°C
100
1msec
100μsec
10
TJ = 25°C
10
Limited by
Source Bonding
Technology
10msec
i
1
VGS = 0V
1.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
Tc = 25°C
Tj = 150°C
Single Pulse
0
1
DC
0.1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
90
VGS(th) , Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
2.6
80
70
ID, Drain Current (A)
Limited By Source
Bonding Technology
i
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
ID = 50μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
60
50
40
30
20
10
0
25
50
75
100
125
150
T C , Case Temperature (°C)
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case (Bottom) Temperature
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRFH8324PbF
RDS(on), Drain-to -Source On Resistance (m
Ω)
12
EAS , Single Pulse Avalanche Energy (mJ)
400
11
10
9
8
7
6
5
4
3
2
0
5
10
T J = 25°C
ID = 20A
350
300
250
200
150
100
50
0
ID
TOP
4.9A
9.4A
BOTTOM 20A
T J = 125°C
15
20
25
50
75
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
V
(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS
tp
+
V
- DD
A
I
AS
0.01
Ω
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
V
DS
V
GS
R
G
V10V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1
R
D
90%
D.U.T.
+
V
DS
-
V
DD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 15a.
Switching Time Test Circuit
Fig 15b.
Switching Time Waveforms
5
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