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IRGIB6B60KD116P

Description
IGBT Transistors
Categorysemiconductor    Discrete semiconductor   
File Size277KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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IRGIB6B60KD116P Overview

IGBT Transistors

IRGIB6B60KD116P Parametric

Parameter NameAttribute value
Product CategoryIGBT Transistors
ManufacturerInfineon
Package / CaseTO-220-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max600 V
Maximum Gate Emitter Voltage+/- 20 V
Continuous Collector Current at 25 C11 A
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Continuous Collector Current Ic Max11 A
Height9.02 mm
Length10.67 mm
TechnologySi
Width4.83 mm
Unit Weight0.211644 oz
IRFH8324PbF
V
DS
V
gs
max
30
± 20
4.1
6.3
14
50
V
V
nC
A
HEXFET
®
Power MOSFET
R
DS(on) max
(@V
GS
= 10V)
(@V
GS
= 4.5V)
Q
g typ.
I
D
(@T
c(Bottom)
= 25°C)
i
PQFN 5X6 mm
Applications
Synchronous MOSFET for high frequency buck converters
Features and Benefits
Features
Low Thermal Resistance to PCB (< 2.3°C/W)
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Benefits
Enable better thermal dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH8324TRPBF
IRFH8324TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice #259
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Max.
30
± 20
23
18
90
Units
V
g
Power Dissipation
g
Power Dissipation
c
hi
57
hi
50
i
200
3.6
54
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
g
0.029
-55 to + 150
Storage Temperature Range
Notes

through
†
are on page 9
1
www.irf.com
©
2015 International Rectifier
Submit Datasheet Feedback
June 2, 2015

IRGIB6B60KD116P Related Products

IRGIB6B60KD116P IRFH8324TR2PBF
Description IGBT Transistors MOSFET MOSFT 30V 50A 4.1mOhm 15nC Qg
Product Category IGBT Transistors MOSFET
Manufacturer Infineon Infineon
Package / Case TO-220-3 PQFN-8
Mounting Style Through Hole SMD/SMT
Configuration Single Single
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Height 9.02 mm 0.83 mm
Length 10.67 mm 6 mm
Technology Si Si
Width 4.83 mm 5 mm
Unit Weight 0.211644 oz 0.017637 oz
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