ZXTP19100CFF
100V PNP MEDIUM POWER TRANSISTOR IN SOT23F
Features
BV
CEO
> -100V
BV
ECO
> -7V
I
C
= -2A Continuous Collector Current
Saturation Voltage V
CE(SAT)
< -120mV @ -1A
h
FE
Characterised Up to -2A
R
CE(SAT)
= 95mΩ
1.5W Power Dissipation
Complementary NPN Type: ZXTN19100CFF
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23F
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.012 grams (Approximate)
Description
This low saturation 100V PNP transistor offers extremely low on-state
losses, making it ideal for use in DC-DC circuits and various driving
and power management functions. The SOT23F package is pin
compatible with the industry standard SOT23 footprint, but offers
lower profile and higher dissipation for applications where power
density is of utmost importance.
Applications
Boost Converters
MOSFET and IGBT Gate Drivers
Lamp and Relay Driver
Motor Drive
Siren Driver
SOT23F
C
E
B
C
B
E
Top View
Device Symbol
Top View
Pin Configuration
Ordering Information
(Note 4)
Product
ZXTP19100CFFTA
Notes:
Compliance
AEC-Q101
Marking
1E1
Reel Size (inches)
7
Tape Width (mm)
8
Quantity per Reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT23F
1E1 = Product Type Marking Code
YW = Date Code Marking
Y = Year : 0~9
W = Week : A~Z : 1~26
a~z : 27~52
z represents 52 & 53 week
1E1
ZXTP19100CFF
Document number: DS33737 Rev. 2 - 2
YW
1 of 7
www.diodes.com
September 2016
© Diodes Incorporated
ZXTP19100CFF
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage (Forward blocking)
Collector-Emitter Voltage
Emitter-Collector Voltage (Reverse blocking)
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
V
CBO
V
CEX
V
CEO
V
ECO
V
EBO
I
C
I
CM
I
B
Value
-110
-110
-100
-7
-7
-2
-3
-1
Unit
V
V
V
V
V
A
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
(Note 5)
Power Dissipation
Linear Derating Factor
(Note 6)
P
D
(Note 7)
(Note 8)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
Symbol
Value
0.84
6.72
1.34
10.72
1.50
12.0
2.0
16.0
149
93
83
60
43.8
-55 to +150
Unit
W
mW/°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
R
θJA
R
θJL
T
J,
T
STG
°C/W
°C/W
°C
ESD Ratings
(Note 10)
Characteristic
Electrostatic Discharge – Human Body Model
Electrostatic Discharge – Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper.
7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper.
8. Same as Note 7, whilst measured at t < 5 seconds.
9.Thermal resistance from junction to solder-point (at the end of the collector lead).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTP19100CFF
Document number: DS33737 Rev. 2 - 2
2 of 7
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September 2016
© Diodes Incorporated
ZXTP19100CFF
Thermal Characteristics and Derating Information
1m
-I
C
Collector Current (A)
1
DC 1s
100ms
10ms
Single Pulse
T
amb
=25°C
1ms
100µs
- I
C
Collector Current (A)
V
CE(sat)
Limited
50mm x 50mm FR4, 2oz Cu
Failure may occur
in this region
BV
(BR)CEO
=100V
100µ
10µ
100m
1µ
BV
(BR)CEX
=110V
T
amb
=25°C
10m
100m
1
10
100
90
100
110
120
-V
CE
Collector-Emitter Voltage (V)
-V
CE
Collector-Emitter Voltage (V)
Safe Operating Area
80
70
60
50
40
30
20
10
0
100µ
1m
10m 100m
D=0.2
Single Pulse
D=0.05
D=0.1
Safe Operating Area
Thermal Resistance (°C/W)
T
amb
=25°C
Maximum Power (W)
50mm x 50mm FR4,
2oz Cu
D=0.5
100
Single Pulse
T
amb
=25°C
50mm x 50mm FR4,
2oz Cu
10
1
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
1.6
Pulse Power Dissipation
Max Power Dissipation (W)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
50mm x 50mm FR4, 2oz Cu
25mm x 25mm FR4,
2oz Cu
15mm x 15mm FR4,
1oz Cu
20
40
60
80
100 120 140 160
Temperature (°C)
Derating Curve
ZXTP19100CFF
Document number: DS33737 Rev. 2 - 2
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September 2016
© Diodes Incorporated
ZXTP19100CFF
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Base
Open)
Collector-Emitter Breakdown Voltage
(Base Open) (Note 11)
Emitter-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Emitter-Collector Breakdown Voltage (Base
Open)
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS
(Note 10)
Static Forward Current Transfer Ratio
Symbol
BV
CBO
BV
CEX
BV
CEO
BV
EBO
BV
ECX
BV
ECO
I
CBO
I
EBO
Min
-110
-110
-100
-7
-7
-7
—
—
200
70
20
—
—
—
—
—
—
—
—
—
—
Typ
-135
-135
-135
-8.3
-8.7
-8.7
<-1
—
Max
—
—
—
—
—
—
-50
-0.5
-50
500
—
—
Unit
V
V
V
V
V
V
nA
µA
nA
Test Condition
I
C
= -100µA
I
C
= -100µA, R
BC
< 1kΩ or
0.25V > V
BC
> -0.25V
I
C
= -10mA
I
E
= -100µA
I
E
= -100µA, R
BC
< 1kΩ or
0.25V > V
BC
> -0.25V
I
E
= -100µA
V
CB
= -110V
V
CB
= -110V, T
A
= +100°C
V
EB
= -5.6V
I
C
= -100mA, V
CE
= -2V
I
C
= -1A, V
CE
= -2V
I
C
= -2A, V
CE
= -2V
I
C
= -0.5A, I
B
= -20mA
I
C
= -1A, I
B
= -100mA
I
C
= -1A, I
B
= -50mA
I
C
= -2A, I
B
= -200mA
I
C
= -2A, I
B
= -200mA
I
C
= -2A, V
CE
= -2V
I
C
= -100mA, V
CE
= -10V,
f = 50MHz
V
EB
= -0.5V, f = 1MHz
V
CB
= -1V, f = 1MHz
V
CC
= -10V,
I
C
= -0.5A,
I
B1
= -I
B2
= -50mA
<-1
330
135
30
-100
-95
-175
-215
-870
-810
142
291
23.5
24.7
22.4
660
107
h
FE
—
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Input Capacitance
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Note:
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
f
T
C
IBO
C
OBO
t
D
t
R
t
S
t
F
-130
-120
-225
-275
-950
-900
—
400
—
—
—
—
—
mV
mV
mV
MHz
pF
pF
ns
ns
ns
ns
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
ZXTP19100CFF
Document number: DS33737 Rev. 2 - 2
4 of 7
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September 2016
© Diodes Incorporated
ZXTP19100CFF
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
1
T
A
=25°C
I
C
/I
B
=50
0.4
I
C
/I
B
=10
0.3
- V
CE(SAT)
(V)
100m
I
C
/I
B
=20
- V
CE(SAT)
(V)
0.2
150°C
100°C
25°C
0.1
I
C
/I
B
=10
10m
1m
10m
100m
1
10
0.0
10m
-55°C
100m
1
- I
C
Collector Current (A)
V
CE(SAT)
v I
C
- I
C
Collector Current (A)
V
CE(SAT)
v I
C
-55°C
1.6
V
CE
=2V
150°C
100°C
600
500
1.0
I
C
/I
B
=10
Normalised Gain
400
300
200
1.0
0.8
0.6
0.4
0.2
0.0
1m
10m
100m
1
-55°C
25°C
- V
BE(SAT)
(V)
1.2
Typical Gain (hFE)
1.4
0.8
0.6
100°C
150°C
0.4
25°C
100
0
0.2
1m
10m
100m
1
- I
C
Collector Current (A)
h
FE
v I
C
- I
C
Collector Current (A)
V
BE(SAT)
v I
C
1.2
V
CE
=2V
25°C
400
350
f = 1MHz
-55°C
Capacitance (pF)
1.0
300
250
200
150
100
50
0
10m
100m
1
10
Cobo
Cibo
- V
BE(ON)
(V)
0.8
0.6
150°C
0.4
100°C
0.2
1m
10m
100m
1
100
- I
C
Collector Current (A)
- Voltage(V)
V
BE(ON)
v I
C
Capacitance v Voltage
ZXTP19100CFF
Document number: DS33737 Rev. 2 - 2
5 of 7
www.diodes.com
September 2016
© Diodes Incorporated
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