MSD130-18 datasheet, PDF - EEWORLD Datasheet

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MSD130-18: DescriptionBridge Rectifier Diode, 3 Phase, 130A, 1800V V(RRM), Silicon, CASE M3, 5 PIN; CategoryDiscrete semiconductor diode; File Size149KB，4 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com; Environmental Compliance

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MSD130-18 Overview

Bridge Rectifier Diode, 3 Phase, 130A, 1800V V(RRM), Silicon, CASE M3, 5 PIN

MSD130-18 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Objectid	2102648341
package instruction	R-XUFM-X5
Contacts	5
Manufacturer packaging code	CASE M3
Reach Compliance Code	compliant
ECCN code	EAR99
Minimum breakdown voltage	1800 V
Configuration	BRIDGE, 6 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.8 V
JESD-30 code	R-XUFM-X5
Maximum non-repetitive peak forward current	1200 A
Number of components	6
Phase	3
Number of terminals	5
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	130 A
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	1800 V
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER

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MSD130

Glass Passivated Three

Phase Rectifier Bridge

RRM

800 to 1800V

130 Amp

Applications

Three phase rectifiers for power supplies

Rectifiers for DC motor field supplies

Battery charger rectifiers

Input rectifiers for variable frequency drives

Circuit

MSD

Features

Three phase bridge rectifier

Blocking voltage:

800 to 1800V

Heat transfer through aluminum oxide DCB

ceramic isolated metal baseplate

Glass passivated chip

Module Type

TYPE

MSD130 – 08

MSD130 – 12

MSD130 – 16

MSD130 – 18

RRM

800V

1200V

1600V

1800V

RSM

900V

1300V

1700V

1900V

Maximum Ratings

Symbol

IFSM

Visol

Tvj

Tstg

Weight

Conditions

Tc=100℃

t=10mS Tvj =45℃

a.c.50Hz;r.m.s.;1min

Values

130

1200

7200

3000

-40 to 150

-40 to 125

5±15%

230

Units

℃

To terminals(M6)

To heatsink(M6)

Module

Thermal Characteristics

Symbol

Conditions

Rth(j-c)

Rth(c-s)

Per diode

Module

Values

0.9

0.03

Units

℃/W

Electrical Characteristics

Symbol

VFM

IRD

MSD130-Rev 1

Dec, 2009

Conditions

T=25℃ IFM =300A

Tvj =25℃ VRD=VRRM

Tvj =150℃ VRD=VRRM

Values

1.8

≤0.3

≤5

Units

www.microsemi.com

1/3

MSD130-18 Related Products

	MSD130-18	MSD130-08
Description	Bridge Rectifier Diode, 3 Phase, 130A, 1800V V(RRM), Silicon, CASE M3, 5 PIN	Bridge Rectifier Diode, 3 Phase, 130A, 800V V(RRM), Silicon, CASE M3, 5 PIN
Is it Rohs certified?	conform to	conform to
Objectid	2102648341	2102648329
package instruction	R-XUFM-X5	R-XUFM-X5
Contacts	5	5
Manufacturer packaging code	CASE M3	CASE M3
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Minimum breakdown voltage	1800 V	800 V
Configuration	BRIDGE, 6 ELEMENTS	BRIDGE, 6 ELEMENTS
Diode component materials	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.8 V	1.8 V
JESD-30 code	R-XUFM-X5	R-XUFM-X5
Maximum non-repetitive peak forward current	1200 A	1200 A
Number of components	6	6
Phase	3	3
Number of terminals	5	5
Maximum operating temperature	150 °C	150 °C
Minimum operating temperature	-40 °C	-40 °C
Maximum output current	130 A	130 A
Package body material	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Certification status	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	1800 V	800 V
surface mount	NO	NO
Terminal form	UNSPECIFIED	UNSPECIFIED
Terminal location	UPPER	UPPER

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