Freescale Semiconductor
Technical Data
Document Number: MRF8S9100H
Rev. 1, 10/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all
typical cellular base station modulation formats.
•
Typical GSM Performance: V
DD
= 28 Volts, I
DQ
= 500 mA, P
out
=
72 Watts CW
Frequency
920 MHz
940 MHz
960 MHz
G
ps
(dB)
19.3
19.3
19.1
η
D
(%)
51.6
52.9
54.1
MRF8S9100HR3
MRF8S9100HSR3
920-
-960 MHz, 72 W CW, 28 V
GSM, GSM EDGE
LATERAL N-
-CHANNEL
RF POWER MOSFETs
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 133 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
)
•
Typical P
out
@ 1 dB Compression Point
≃
108 Watts CW
•
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ
= 700 mA, P
out
=
45 Watts Avg.
G
ps
(dB)
19.1
19.1
19.0
η
D
(%)
43
44
45
SR1
@ 400 kHz
(dBc)
--64.1
--63.6
--62.8
SR2
@ 600 kHz
(dBc)
--74.5
--74.6
--75.1
EVM
(% rms)
1.8
2.0
2.3
CASE 465-
-06, STYLE 1
NI-
-780
MRF8S9100HR3
Frequency
920 MHz
940 MHz
960 MHz
CASE 465A-
-06, STYLE 1
NI-
-780S
MRF8S9100HSR3
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
--0.5, +70
--6.0, +10
32, +0
--65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
©
Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
MRF8S9100HR3 MRF8S9100HSR3
1
RF Device Data
Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW, 28 Vdc, I
DQ
= 500 mA
Case Temperature 81°C, 72 W CW, 28 Vdc, I
DQ
= 500 mA
Case Temperature 82°C, 45 W CW, 28 Vdc, I
DQ
= 700 mA
Symbol
R
θJC
Value
(1,2)
0.60
0.65
0.69
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 70 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 460
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 500 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1.7 Adc)
Power Gain
Drain Efficiency
Input Return Loss
P
out
@ 1 dB Compression Point, CW
V
GS(th)
V
GS(Q)
V
DS(on)
1.4
2.1
0.1
2.2
2.9
0.17
2.9
3.6
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 500 mA, P
out
= 72 W CW, f = 920 MHz
G
ps
η
D
IRL
P1dB
G
ps
(dB)
19.3
19.3
19.1
18
50
—
100
19.3
51.6
--12.4
—
23
—
--9
—
IRL
(dB)
--12.4
--14.3
--12.2
dB
%
dB
W
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 500 mA, P
out
= 72 W CW
Frequency
920 MHz
940 MHz
960 MHz
η
D
(%)
51.6
52.9
54.1
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Part internally input matched.
(continued)
MRF8S9100HR3 MRF8S9100HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 100 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 40 MHz Bandwidth @ P
out
= 72 W CW
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
Symbol
P1dB
IMD
sym
Min
—
—
Typ
108
4
Max
—
—
Unit
W
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 500 mA, 920--960 MHz Bandwidth
VBW
res
G
F
∆G
∆P1dB
—
—
—
—
30
0.13
0.02
0.005
—
—
—
—
MHz
dB
dB/°C
dB/°C
Typical GSM EDGE Performances
(In Freescale GSM EDGE Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 700 mA, P
out
= 45 W Avg.,
920--960 MHz EDGE Modulation
G
ps
(dB)
19.1
19.1
19.0
η
D
(%)
43
44
45
SR1
@ 400 kHz
(dBc)
--64.1
--63.6
--62.8
SR2
@ 600 kHz
(dBc)
--74.5
--74.6
--75.1
EVM
(% rms)
1.8
2.0
2.3
Frequency
920 MHz
940 MHz
960 MHz
MRF8S9100HR3 MRF8S9100HSR3
RF Device Data
Freescale Semiconductor
3
C7
B1
C22
C21
C20
V
GS
V
DS
R1
C6
C15
L1
C11
C4
CUT OUT AREA
C8
L2
C9
C12 C10
C16
C17 C18 C19
C1
C2
C3
C5
C13
C14
MRF8S9100H
Rev. 2
Figure 1. MRF8S9100HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8S9100HR3(HSR3) Test Circuit Component Designations and Values
Part
B1
C1, C6
C2
C3
C4, C5
C7, C17, C18, C19
C8, C9
C10, C11
C12
C13
C14
C15, C16
C20, C21, C22
L1, L2
R1
PCB
Short RF Bead
47 pF Chip Capacitors
5.6 pF Chip Capacitor
7.5 pF Chip Capacitor
9.1 pF Chip Capacitors
10
μF,
35 V Tantalum Capacitors
13 pF Chip Capacitors
2.7 pF Chip Capacitors
6.2 pF Chip Capacitor
1.8 pF Chip Capacitor
20 pF Chip Capacitor
0.56
μF,
50 V Chip Capacitors
470
μF,
63 V Electrolytic Capacitors
12.5 nH, 4 Turn Inductors
0
Ω,
3 A Chip Resistor
0.030″,
ε
r
= 2.55
Description
Part Number
2743019447
ATC100B470JT500XT
ATC100B5R6BT500XT
ATC100B7R5BT500XT
ATC100B9R1BT500XT
T491D106K035AT
ATC100B130BT500XT
ATC100B2R7BT500XT
ATC100B6R2BT500XT
ATC100B1R8BT500XT
ATC100B200JT500XT
C1825C564J5RAC--TU
MCGPR63V477M13X26--RH
A04TJLC
CRCW12060000Z0EA
AD255A--0300--55--11
Manufacturer
Fair--Rite
ATC
ATC
ATC
ATC
Kemet
ATC
ATC
ATC
ATC
ATC
Kemet
Multicomp
Coilcraft
Vishay
Arlon
MRF8S9100HR3 MRF8S9100HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
21
20
G
ps
, POWER GAIN (dB)
19
18
17
16
V
DD
= 28 Vdc, P
out
= 72 W CW, I
DQ
= 500 mA
15
800 820 840 860 880 900 920 940
f, FREQUENCY (MHz)
IRL
G
ps
η
D
60
50
40
30
20
10
0
980 1000
η
D,
DRAIN EFFICIENCY (%)
--5
--10
--15
--20
960
Figure 2. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P
out
= 72 Watts CW
21
η
D
20
G
ps
, POWER GAIN (dB)
19
18
17
16
15
800
EVM
820
840
860
880
900
920
940
960
0
980 1000
IRL
40
30
G
ps
V
DD
= 28 Vdc, P
out
= 46 W Avg.
I
DQ
= 700 mA, EDGE Modulation
20
4
2
50
η
D,
DRAIN
EFFICIENCY (%)
IRL, INPUT RETURN LOSS (dB)
--5
--10
--15
--20
IRL, INPUT RETURN LOSS (dB)
f, FREQUENCY (MHz)
Figure 3. Power Gain, Input Return Loss, EVM and Drain
Efficiency versus Frequency @ P
out
= 46 Watts Avg.
--10
20
19
G
ps
, POWER GAIN (dB)
18
17
16
η
D
10
TWO--TONE SPACING (MHz)
100
15
1
10
P
out
, OUTPUT POWER (WATTS) CW
G
ps
920 MHz
960 MHz
940 MHz
920 MHz
V
DD
= 28 Vdc
I
DQ
= 500 mA
100
30
15
75
60
960 MHz
45
IMD, INTERMODULATION DISTORTION (dBc)
IM3--U
--30
--40
--50
--60
1
IM7--L
IM7--U
IM5--U
IM3--L
IM5--L
200
0
Figure 4. Intermodulation Distortion Products
versus Two-
-Tone Spacing
Figure 5. Power Gain and Drain Efficiency
versus Output Power
MRF8S9100HR3 MRF8S9100HSR3
RF Device Data
Freescale Semiconductor
5
η
D,
DRAIN EFFICIENCY (%)
V
DD
= 28 Vdc, P
out
= 100 W (PEP)
I
DQ
= 500 mA, Two--Tone Measurements
--20 (f1 + f2)/2 = Center Frequency of 940 MHz
f = 940 MHz
EVM, ERROR VECTOR
MAGNITUDE (% rms)
京公网安备 11010802033920号
EEWORLD
