IXDN430 / IXDI430 / IXDD430 / IXDS430
30 Amp Low-Side Ultrafast MOSFET / IGBT Driver
Features
• Built using the advantages and compatibility
of CMOS and IXYS HDMOS
TM
processes
• Latch-Up Protected
• High Peak Output Current: 30A Peak
• Wide Operating Range: 8.5V to 35V
• Under Voltage Lockout Protection
• Ability to Disable Output under Faults
• High Capacitive Load
Drive Capability: 5600 pF in <25ns
• Matched Rise And Fall Times
• Low Propagation Delay Time
• Low Output Impedance
• Low Supply Current
General Description
The IXDN430/IXDI430/IXDD430/IXDS430 are high speed high current
gate drivers specifically designed to drive MOSFETs and IGBTs to their
minimum switching time and maximum practical frequency limits. The
IXD_430 can source and sink 30A of peak current while producing
voltage rise and fall times of less than 30ns. The input of the drivers are
compatible with TTL or CMOS and are fully immune to latch up over the
entire operating range. Designed with small internal delays, cross
conduction/current shoot-through is virtually eliminated in all
configurations. Their features and wide safety margin in operating
voltage and power make the drivers unmatched in performance and
value.
The IXD_430 incorporates a unique ability to disable the output under
fault conditions. The standard undervoltage lockout voltages are 11.75V
for the IXD_430 parts and 8.5V for the IXD_430M parts. ULVO can be
set to either level in the IXDS430 with the UNSEL input line. When a
logical low is forced into the Enable inputs, both final output stage
MOSFETs (NMOS and PMOS) are turned off. As a result, the output
of the IXDD430 enters a tristate mode and enables a Soft Turn-Off of the
MOSFET when a short circuit is detected. This helps prevent damage
that could occur to the MOSFET if it were to be switched off abruptly due
to a dv/dt over-voltage transient.
The IXDN430 is configured as a noninverting gate driver, and the IXDI430
is an inverting gate driver. The IXDS430 can be configured either as a
noninverting or inverting driver. The IXD_430 are available in the standard
28-pin SIOC (SI-CT), 5-pin TO-220 (CI), and in the TO-263 (YI) surface
mount packages. CT or 'Cool Tab' for the 28-pin SOIC package refers
to the backside metal heatsink tab.
Applications
• Driving MOSFETs and IGBTs
• Motor Controls
• Line Drivers
• Pulse Generators
• Local Power ON / OFF Switch
• Switch Mode Power Supplies (SMPS)
• DC to DC Converters
• Pulse Transformer Driver
• Limiting di/dt Under Short Circuit
• Class D Switching Amplifiers
Ordering Information
P a rt N u m b e r
IX D D 4 3 0 Y I
IX D D 4 3 0 M Y I
IX D D 4 3 0 C I
IX D D 4 3 0 M C I
IX D I4 3 0 Y I
IX D I4 3 0 M Y I
IX D I4 3 0 C I
IX D I4 3 0 M C I
IX D N 4 3 0 Y I
IX D N 4 3 0 M Y I
IX D N 4 3 0 C I
IX D N 4 3 0 M C I
IX D S 4 3 0 S I
P ackage
T ype
5 -p in T O -2 6 3
-5 5 ° C to + 1 2 5 °
5 -p in T O -2 2 0
5 -p in T O -2 6 3
5 -p in T O -2 2 0
5 -p in T O -2 6 3
5 -p in T O -2 2 0
-5 5 ° C to + 1 2 5 °
In v e rtin g / N o n
In v e rtin g w ith
E n a b le
and UV SEL
-5 5 ° C to + 1 2 5 °
In v e rtin g
Tem p. R ange
C o n fig u ra tio n
N o n In v e rtin g w ith
E n a b le
U n d e r v o lta g e
L o c k -o u t
1 1 .7 5 V
8 .5 V
1 1 .7 5 V
8 .5 V
1 1 .7 5 V
8 .5 V
1 1 .7 5 V
8 .5 V
1 1 .7 5 V
8 .5 V
1 1 .7 5 V
8 .5 V
1 1 .7 5 V
or
8 .5 V
-5 5 ° C to + 1 2 5 °
N o n In v e rtin g
2 8 -p in S O IC
Copyright © IXYS CORPORATION 2005
DS99045C(04/04)
First Release
IXDN430 / IXDI430 / IXDD430 / IXDS430
Figure 1A - IXDD430 (Non Inverting With Enable) Diagram
Vcc
Vcc
400k
IN
EN
UVCC
GND
GND
1K
OUT
Vcc
Figure 1B - IXDN430 (Non-Inverting) Diagram
Vcc
IN
1K
OUT
UVCC
GND
Vcc
Figure 1C - IXDI430 (Inverting) Diagram
GND
Vcc
IN
1K
OUT
UVCC
GND
Figure 1D - IXDS430 (Inverting and Non Inverting with Enable) Diagram
Vcc
Vcc
GND
IN
EN
1K
400K
OUT P
OUT N
400K
INV
UVSEL
GND
UVCC
GND
Notes:
1. Out P and Out N are connected together in the 5 lead TO-220 and TO-263 packages;
2. IXDS430: Undervoltage lock-out is set by UVSEL. UVSEL = Vcc, UVLO = 8.5V, UVSEL = OPEN, UVLO = 11.75V.
2
IXDN430 / IXDI430 / IXDD430 / IXDS430
Absolute Maximum Ratings
(Note 1)
Parameter
Supply Voltage
All Other Pins
Power Dissipation, T
AMBIENT
≤25
oC
TO220 (CI), TO263 (YI)
Derating Factors (to Ambient)
TO220 (CI), TO263 (YI)
Storage Temperature
Lead Temperature (10 sec)
Operating Ratings
P a ra m e te r
M a xim um Junction T em perature
Value
40 V
-0.3 V to VCC + 0.3 V
2W
0.016W/oC
-65 oC to 150 oC
300 oC
V a lu e
150 o C
O pera ting T em perature R ange
-55 o C to 125 o C
T herm al Im pedance T O 220 (C I), TO 263 (Y I)
θ
JC
(Ju nction T o C ase)
0.95 o C /W
62.5 o C /W
T herm al Im pedance 28 pin S O IC w ith H eat S lug (S I)
θ
JC
(Ju nction T o C ase)
3 o C /W
θ
JA
(Ju nction T o A m bien t)
Electrical Characteristics
Unless otherwise noted, T
A
= 25
o
C, 8.5V
≤
V
CC
≤
35V .
All voltage measurements with respect to GND. IXDD430 configured as described in
Test Conditions.
S ym b o l
V
IH
V
IL
V
IN
I
IN
V
OH
V
OL
R
OH
R
OL
I
P E A K
I
D C
V
EN
V
ENH
V
ENL
R
EN
V
IN V
V
IN V H
V
IN V L
R
IN V
t
R
t
F
t
O N D L Y
t
O FF D L Y
t
E N O H
t
D O L D
V
CC
I
C C
P a r a m e te r
H ig h in p u t v o lta g e
L o w in p u t v o lta g e
In p u t v o lta g e r a n g e
In p u t c u rre n t
H ig h o u tp u t v o lta g e
L o w o u tp u t v o lta g e
O u tp u t re s is ta n c e
@ O u tp u t h ig h
O u tp u t re s is ta n c e
@ O u tp u t L o w
P e a k o u tp u t c u rre n t
C o n tin u o u s o u tp u t
c u rre n t
E n a b le v o lta g e ra n g e
H ig h E n In p u t V o lta g e
L o w E n In p u t V o lta g e
E N In p u t R e s is ta n c e
IN V V o lta g e R a n g e
H ig h IN V In p u t V o lta g e
L o w IN V In p u t V o lta g e
IN V In p u t R e s is ta n c e
R is e tim e
F a ll tim e
O n -tim e p ro p a g a tio n
d e la y
O ff-tim e p ro p a g a tio n
d e la y
E n a b le to o u tp u t h ig h
d e la y tim e
D is a b le to o u tp u t lo w
d e la y tim e
P o w e r s u p p ly v o lta g e
P o w e r s u p p ly c u rre n t
V
CC
= 18V
V
CC
= 18V
V
CC
= 18V
L im ite d b y p a c k a g e p o w e r
d is s ip a tio n
IX D D 4 3 0 O n ly
IX D D 4 3 0 O n ly
IX D D 4 3 0 O n ly
IX D S 4 3 0 O n ly
IX D S 4 3 0 O n ly
IX D S 4 3 0 O n ly
IX D S 4 3 0 O n ly
IX D S 4 3 0 O n ly
C
L
= 5 6 0 0 p F V c c = 1 8 V
C
L
= 5 6 0 0 p F V c c = 1 8 V
C
L
= 5 6 0 0 p F V c c = 1 8 V
C
L
= 5 6 0 0 p F V c c = 1 8 V
IX D D 4 3 0 O n ly , V c c = 1 8 V
IX D D 4 3 0 O n ly , V c c = 1 8 V
8 .5
V
IN
= 3 .5 V
V
IN
= 0 V
V
IN
= + V
C C
7 .5
1 0 .5
18
1
0
400
18
16
41
35
20
18
45
39
47
120
35
3
10
10
9 .5
1 3 .0
- 0 .3
2 /3 V c c
1 /3 V c c
400
V c c + 0 .3
0 .3
0 .2
30
8
- 0 .3
2 /3 V c c
1 /3 V c c
V c c + 0 .3
0 V
≤
V
IN
≤
V
C C
T e s t C o n d itio n s
0 V
≤
V
IN
≤
V
C C ,
8 .5 V
≤
V
IN
≤
1 8 V
0 V
≤
V
IN
≤
V
C C ,
8 .5 V
≤
V
IN
≤
1 8 V
-5
-1 0
V
C C
- 0 .0 2 5
0 .0 2 5
0 .4
0 .3
M in
3 .5
0 .8
V
C C
+ 0 .3
10
T yp
M ax
U n its
V
V
V
µ
A
V
V
Ω
Ω
A
A
V
V
V
K ohm
V
V
V
K ohm
ns
ns
ns
ns
ns
ns
V
mA
µ
A
µ
A
V
V
IX D _ 4 3 0 M ; IX D S 4 3 0 :
U V S E L = V
C C
(M O S F E T )
IX D _ 4 3 0 ; IX D S 4 3 0 :
U V S E L = O P E N (IG B T )
Specifications Subject To Change Without Notice
U VLO
8 .5
1 1 .7 5
Note 1:
Operating the device beyond parameters with listed “absolute maximum ratings” may cause permanent
damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not
guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed.
Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
3
IXDN430 / IXDI430 / IXDD430 / IXDS430
Electrical Characteristics
Unless otherwise noted, temperature over -55
o
C to +125
o
C, 4.5
≤
V
CC
≤
35V .
All voltage measurements with respect to GND. IXDD430 configured as described in
Test Conditions.
Symbol
V
IH
V
IL
V
IN
R
OH
R
OL
t
R
t
F
t
ONDLY
t
OFFDLY
V
CC
Parameter
High input voltage
Low input voltage
Input voltage range
Output resistance
@ Output high
Output resistance
@ Output Low
Rise time
Fall time
On-time propagation
delay
Off-time propagation
delay
Power supply voltage
Test Conditions
8.5
≤
Vcc
≤
18V
8.5
≤
Vcc
≤
18V
Min
3.5
Typ
Max
1.1
Units
V
V
V
Ω
Ω
ns
ns
ns
ns
V
-5
V
CC
= 18V
V
CC
= 18V
C
L
=5600pF Vcc=18V
C
L
=5600pF Vcc=18V
C
L
=5600pF Vcc=18V
C
L
=5600pF Vcc=18V
8.5
18
V
CC
+ 0.3
0.46
0.4
20
18
58
51
35
5-lead TO-220 Outline (IXD_430CI, IXD_430MCI) 5-lead TO-263 Outline (IXD_430YI, IXD_430MYI)
28-pin SOIC Outline (IXD_430SI)
NOTE:
Mounting tabs, solder tabs, or heat sink metalization on all packages are connected to ground.
4
IXDN430 / IXDI430 / IXDD430 / IXDS430
Pin Configurations
Vcc 1
Vcc 2
Vcc 3
Vcc 4
N/C 5
UVSEL 6
N/C 7
IN 8
EN 9
INV 10
GND 11
GND 12
GND 13
GND 14
28 Pin SOIC
(SI-CT)
28 Vcc
27 Vcc
26 Vcc
25 Vcc
24 OUT P
23 OUT P
22 OUT P
21 OUT N
20 OUT N
19 OUT N
18 GND
17 GND
16 GND
15 GND
1
2
3
4
5
Vcc
OU
T
GND
IN
E *
N
TO220 (CI)
TO263 (YI)
Pin Description
SYMBOL
VCC
IN
EN *
INV
OUT P
OUT N
FUNCTION
Supply Voltage
Input
Enable
Invert
DESCRIPTION
Positive power-supply voltage input. This pin provides power to the
entire chip. The range for this voltage is from 8.5V to 35V.
Input signal-TTL or CMOS compatible.
The system enable pin. This pin, when driven low, disables the chip,
forcing high impedance state to the output (IXDD430 Only).
Forcing INV low causes the IXDS430 to become non-inverted, while
forcing INV high causes the IXDS430 to become inverted.
Respective P and N driver outputs. For application purposes this pin
is connected, through a resistor, to Gate of a MOSFET/IGBT. The P
and N output pins are connected together in the TO-263 and TO-220
packages.
The system ground pin. Internally connected to all circuitry, this pin
provides ground reference for the entire chip. This pin should be
connected to a low noise analog ground plane for optimum
performance.
W ith UVSEL connected to Vcc, IXDS430 outputs go low at Vcc <
8.5V; W ith UVSEL open, under voltage level is set at Vcc < 12.5V
Output
GND
Ground
Select Under
Voltage Level
UVSEL
* This pin is used only on the IXDD430, and is N/C (not connected) on the IXDI430 and IXDN430.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when
handling and assembling this component.
Figure 2 - Characteristics Test Diagram
.
+
C
BYPASS/
FILTER
Vcc
.
C
LOAD
Vcc
OUT
GND
IXDD430
-
+
Vin
IN
EN
-
5
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