FMMT455TC datasheet, PDF - EEWORLD Datasheet

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FMMT455TC: DescriptionBipolar Transistors - BJT NPN Medium Power; Categorysemiconductor Discrete semiconductor; File Size115KB，2 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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FMMT455TC Overview

Bipolar Transistors - BJT NPN Medium Power

FMMT455TC Parametric

Parameter Name	Attribute value
Product Category	Bipolar Transistors - BJT
Manufacturer	Diodes
RoHS	Details
Mounting Style	SMD/SMT
Package / Case	SOT-23-3
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	140 V
Collector- Base Voltage VCBO	160 V
Emitter- Base Voltage VEBO	5 V
Maximum DC Collector Current	1 A
Gain Bandwidth Product fT	100 MHz
Maximum Operating Temperature	+ 150 C
Continuous Collector Current	1 A
Height	1.1 mm
Length	3 mm
Minimum Operating Temperature	- 55 C
Packaging	MouseReel
Packaging	Cut Tape
Packaging	Reel
Pd - Power Dissipation	0.5 W
Factory Pack Quantity	10000
Width	1.4 mm
Unit Weight	0.000282 oz

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SOT23 NPN SILICON PLANAR

HIGH PERFORMANCE TRANSISTOR

ISSUE 3 FEBRUARY 1996

FEATURES

* 140 Volt V

CEO

* 1 Amp continuous current

* P

tot

= 500 mW

PARTMARKING DETAIL

455

FMMT455

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

I

B

P

tot

T

j

:T

stg

VALUE

160

140

5

2

1

200

500

-55 to +150

SOT23

UNIT

V

A

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Sustaining Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter

Saturation Voltage

Static Forward Current

Transfer Ratio

Transition

Frequency

Output Capacitance

SYMBOL

V

(BR)CBO

V

CEO(sus)

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

h

FE

f

T

C

obo

100

10 Typ

100

15

MIN. MAX.

160

140

5

0.1

0.7

300

MHz

pF

UNIT

V

µ

A

µ

A

CONDITIONS.

I

C

=100

µ

A

I

C

=10mA*

I

E

=100

µ

A

V

CB

=140V

V

EB

=4V

I

C

=150mA, I

B

=15mA

I

C

=150mA, V

CE

=10V*

I

C

=1A, V

CE

=10V*

I

C

=50mA, V

CE

=10V

f=100MHz

V

CB

=10V, f=1MHz

V

* Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

Spice parameter data is available upon request for this device

3 - 110

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