SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
SIPMOS
®
Power-Transistor
Features
• N-channel - Normal Level -Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Avalanche test
• Repetive Avalanche up to
T
jmax
= 175 °C
• dv /dt rated
Type
SPB80N06S-08
SPI80N06S-08
SPP80N06S-08
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Ordering Code
PG-TO263-3-2
Product Summary
V
DS
R
DS(on),max
(SMD version)
I
D
55
7.7
80
V
mΩ
A
Green Package
PG-TO262-3-1
PG-TO220-3-1
V
DD
=30 V, I
D
=80 A, V
GS
=10 V, R
G
=2.4
Ω
Marking
SP0000-84808
1N0608
T
C
=25 °C,
V
GS
=10 V
SP0000-82518
1N0608
T
C
=100 °C,
V
GS
=10 V
SP0000-84809
1N0608
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
1)
I
D
T
C
=25 °C,
V
GS
=10 V
80
A
T
C
=100 °C,
V
GS
=10 V
Pulsed drain current
2)
Avalanche energy, single pulse
Avalanche energy, periodic
2)
2)
80
320
700
30
mJ
I
D,pulse
E
AS
E
AR
T
C
=25 °C
I
D
=80 A,
R
GS
=25
Ω,
V
DD
=25 V
T
j
=175 °C
I
D
=80 A,
V
DS
=40 V,
di /dt =200 A/µs,
T
j,max
=175 °C
Reverse diode dv /dt
Gate source voltage
Power dissipation
dv /dt
6
kV/µs
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
±20
300
-55 ... +175
55/175/56
page 1
V
W
°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Rev. 1.0
2005-06-28
SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
Parameter
Symbol Conditions
min.
Thermal characteristics
2)
Thermal resistance, junction - case
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
R
thJC
R
thJA
R
thJA
minimal footprint
6 cm2 cooling area
3)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=240 µA
V
DS
=25 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=25 V,
V
GS
=0 V,
T
j
=150 °C
2)
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=80 A
V
GS
=10 V,
I
D
=80 A
SMD version
Transconductance
2)
footnote on page 3
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=80 A
55
2.1
-
-
3.0
0.1
-
4
1
µA
V
-
-
-
-
0.38
-
-
-
0.5
62
62
40
K/W
Values
typ.
max.
Unit
-
-
-
-
10
10
6.5
6.2
100
100
8
7.7
nA
mΩ
-
73
-
S
Rev. 1.0
page 2
2005-06-28
SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
Parameter
Symbol Conditions
min.
Dynamic characteristics
2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
2)
Diode continous forward current
Diode pulse current
Diode forward voltage
I
S
I
S,pulse
V
SD
V
GS
=0 V,
I
F
=80 A,
T
j
=25 °C
V
R
=27.5 V,
I
F
=I
S
,
di
F
/dt =100 A/µs
-
T
C
=25 °C
-
-
-
0.9
320
1.3
V
-
80
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=44 V,
I
D
=80 A,
V
GS
=0 to 10 V
-
-
-
-
19
62
125
5.4
-
-
187
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=30 V, I
D
=80 A,
V
GS
=10 V, R
G
=2.4
Ω
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
-
-
-
-
-
-
-
3660
1075
540
22
53
54
32
-
-
-
-
-
-
-
ns
pF
Values
typ.
max.
Unit
Reverse recovery time
t
rr
-
105
ns
Reverse recovery charge
Q
rr
-
30
-
nC
1)
Current is limited by bondwire; with an
R
thJC
=0.5 K/W the chip is able to carry 132A at 25°C. For detailed
information see Application Note APPS071E at
www.infineon.com/optimos
2)
3)
Defined by design not subjected to production test.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2005-06-28
SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
=10 V
350
100
300
80
250
60
P
tot
[W]
200
150
I
D
[A]
40
20
50
0
0
50
100
150
200
0
0
50
100
150
200
100
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
1000
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1
limited by on-state
resistance
10 µs
100 µs
1 ms
10
0
100
I
D
[A]
DC
Z
thJC
[K/W]
10 ms
0.5
0.2
0.1
0.05
0.02
0.01
10
-1
10
10
-2
single pulse
1
0.1
1
10
100
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.0
page 4
2005-06-28
SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
160
V8
6.5 V
6V
V7
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
25
140
V 10
20
V 4.5
V5
V 5.5
120
R
DS(on)
[m
Ω
]
100
5.5 V
15
I
D
[A]
80
V6
60
10
V 6.5
V7
V8
V 10
5V
40
4.5 V
5
20
0
0
1
2
3
0
0
20
40
60
80
100
120
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
160
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
80
140
70
120
60
100
50
80
g
fs
[S]
175 °C
25 °C
I
D
[A]
40
60
30
40
20
20
10
0
0
2
4
6
8
0
0
20
40
60
80
V
GS
[V]
I
D
[A]
Rev. 1.0
page 5
2005-06-28
京公网安备 11010802033920号
EEWORLD
