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STF2N80K5

Description
Heavy Duty Power Connectors PP15/45 HOUSING ONLY RED - BULK
CategoryDiscrete semiconductor    The transistor   
File Size1MB,22 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Download user manual Parametric View All

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STF2N80K5 Overview

Heavy Duty Power Connectors PP15/45 HOUSING ONLY RED - BULK

STF2N80K5 Parametric

Parameter NameAttribute value
Brand NameSTMicroelectronics
Is it Rohs certified?conform to
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time17 weeks
Avalanche Energy Efficiency Rating (Eas)60.5 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage800 V
Maximum drain current (Abs) (ID)2 A
Maximum drain current (ID)2 A
Maximum drain-source on-resistance4.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)20 W
Maximum pulsed drain current (IDM)8 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
STD2N80K5, STF2N80K5,
STP2N80K5, STU2N80K5
N-channel 800 V, 3.5
Ω
typ., 2 A MDmesh™ K5 Power MOSFETs
in DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet
production data
TAB
Features
Order codes
3
1
V
DS
R
DS(on)
max
I
D
P
TOT
45 W
20 W
45 W
STD2N80K5
1
2
3
DPAK
TAB
STF2N80K5
STP2N80K5
STU2N80K5
800 V
4.5
Ω
2A
TO-220FP
TAB
Industry’s lowest R
DS(on)
* area
3
2
1
3
1
2
Industry’s best figure of merit (FoM)
Ultra low gate charge
100% avalanche tested
Zener-protected
TO-220
IPAK
Figure 1. Internal schematic diagram
D(2, TAB)
Applications
Switching applications
Description
G(1)
S(3)
AM01476v1
These very high voltage N-channel Power
MOSFETs are designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Table 1. Device summary
Order codes
STD2N80K5
STF2N80K5
2N80K5
STP2N80K5
STU2N80K5
TO-220
IPAK
Tube
Marking
Package
DPAK
TO-220FP
Packaging
Tape and reel
September 2015
This is information on a product in full production.
DocID024993 Rev 3
1/22
www.st.com
22
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