IRF840B/IRFS840B
February 2005
IRF840B/IRFS840B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
power factor correction and electronic lamp ballasts based
on half bridge.
Features
•
•
•
•
•
•
8.0A, 500V, R
DS(on)
= 0.8Ω @V
GS
= 10 V
Low gate charge ( typical 41 nC)
Low Crss ( typical 35 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
G
DS
TO-220
IRF Series
G
GD S
TO-220F
IRFS Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
IRF840B
500
8.0
5.1
32
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
IRFS840B
8.0
5.1
32
320
8.0
13.4
5.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
134
1.08
-55 to +150
300
44
0.35
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
IRF840B
0.93
0.5
62.5
IRFS840B
2.86
--
62.5
Units
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
Rev. B, February 2005
IRF840B/IRFS840B
Electrical Characteristics
Symbol
Parameter
T
C
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
500
--
--
--
--
--
--
0.55
--
--
--
--
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= 10 V, I
D
= 4.0 A
V
DS
= 40 V, I
D
= 4.0 A
(Note 4)
2.0
--
--
--
0.65
7.3
4.0
0.8
--
V
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
1400
145
35
1800
190
45
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 400 V, I
D
= 8.0 A,
V
GS
= 10 V
(Note 4, 5)
V
DD
= 250 V, I
D
= 8.0 A,
R
G
= 25
Ω
(Note 4, 5)
--
--
--
--
--
--
--
22
65
125
75
41
6.5
17
55
140
260
160
53
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
V
GS
= 0 V, I
S
= 8.0 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= 8.0 A,
dI
F
/ dt = 100 A/µs
(Note 4)
--
--
--
--
--
--
--
--
390
4.2
8.0
32
1.4
--
--
A
A
V
ns
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 9.0mH, I
AS
= 8.0A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
8.0A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
©2005 Fairchild Semiconductor Corporation
Rev. B, February 2005
IRF840B/IRFS840B
Typical Characteristics
10
1
I
D
, Drain Current [A]
I
D
, Drain Current [A]
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
Top :
10
1
150 C
10
0
o
10
0
25 C
-55 C
o
o
※
Notes :
1. 250µs Pulse Test
2. T
C
= 25
℃
※
Notes :
1. V
DS
= 40V
2. 250µ s Pulse Test
10
-1
10
-1
10
0
10
1
10
-1
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
3.0
R
DS(ON)
[Ω ],
Drain-Source On-Resistance
I
DR
, Reverse Drain Current [A]
2.5
10
1
V
GS
= 10V
2.0
V
GS
= 20V
1.5
10
0
150
℃
25
℃
※
Notes :
1. V
GS
= 0V
2. 250µs Pulse Test
1.0
※
Note : T
J
= 25
℃
0.5
0
5
10
15
20
25
30
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
3000
2500
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
12
10
V
DS
= 100V
V
DS
= 250V
Capacitance [pF]
2000
V
GS
, Gate-Source Voltage [V]
C
iss
8
V
DS
= 400V
1500
6
1000
C
oss
C
rss
※
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
4
500
2
※
Note : I
D
= 8.0 A
0
-1
10
0
10
0
10
1
0
5
10
15
20
25
30
35
40
45
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2005 Fairchild Semiconductor Corporation
Rev. B, February 2005
IRF840B/IRFS840B
Typical Characteristics
(Continued)
1.2
3.0
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
1.1
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250 µA
0.5
※
Notes :
1. V
GS
= 10 V
2. I
D
= 4.0 A
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
10
10
2
2
Operation in This Area
is Limited by R
DS(on)
Operation in This Area
is Limited by R
DS(on)
I
D
, Drain Current [A]
10
1
I
D
, Drain Current [A]
100
µ
s
1 ms
10 ms
DC
10
µ
s
10
1
100
µ
s
1 ms
10 ms
100 ms
10
0
10
0
DC
10
-1
※
Notes :
o
1. T
C
= 25 C
o
2. T
J
= 150 C
3. Single Pulse
0
10
-1
※
Notes :
o
1. T
C
= 25 C
o
2. T
J
= 150 C
3. Single Pulse
0
10
-2
10
10
1
10
2
10
3
10
-2
10
10
1
10
2
10
3
V
DS
, Drain-Source Voltage [V]
V
DS
, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for IRF840B
Figure 9-2. Maximum Safe Operating Area
for IRFS840B
10
8
I
D
, Drain Current [A]
6
4
2
0
25
50
75
100
125
150
T
C
, Case Temperature [
℃
]
Figure 10. Maximum Drain Current
vs Case Temperature
©2005 Fairchild Semiconductor Corporation
Rev. B, February 2005
IRF840B/IRFS840B
Typical Characteristics
(Continued)
10
0
Z
θ
JC
(t), Thermal Response
D = 0 .5
0 .2
10
-1
※
N o te s :
1 . Z
θ
J C
(t) = 0 .9 3
℃
/W M a x .
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
(t)
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
P
DM
t
1
t
2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a re W a v e P u ls e D u r a tio n [s e c ]
Figure 11-1. Transient Thermal Response Curve for IRF840B
D = 0 .5
Z
θ
JC
(t), Thermal Response
10
0
0 .2
0 .1
0 .0 5
10
-1
※
N o te s :
1 . Z
θ
J C
(t) = 2 .8 6
℃
/W M a x .
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
(t)
0 .0 2
0 .0 1
s in g le p u ls e
P
DM
t
1
t
2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a re W a v e P u ls e D u r a tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for IRFS840B
©2005 Fairchild Semiconductor Corporation
Rev. B, February 2005
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