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Datasheet> All Categories > Discrete semiconductor> The transistor> FS35R12KT3
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FS35R12KT3

Description
Gate Drivers
CategoryDiscrete semiconductor    The transistor   
File Size426KB，8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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FS35R12KT3 Overview

Gate Drivers

FS35R12KT3 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X28
Contacts28
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Shell connectionISOLATED
Maximum collector current (IC)55 A
Collector-emitter maximum voltage1200 V
ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X28
Number of components6
Number of terminals28
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)210 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal off time (toff)610 ns
Nominal on time (ton)140 ns
VCEsat-Max2.15 V
Base Number Matches1

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TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FS35R12KT3
VorläufigeDaten
PreliminaryData

1200
35
55
70
210
+/-20
min.
T
vj
= 25°C
T
vj
= 125°C
V
CE sat
V
GEth
Q
G
R
Gint
C
ies
C
res
I
CES
I
GES
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
t
d on
5,0







typ.
1,70
1,90
5,8
0,33
6,0
2,50
0,09


0,09
0,09
0,03
0,05
0,42
0,52
0,07
0,09
max.
2,15
6,5




5,0
400

V
V
V
µC
Ω
nF
nF
mA
nA
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ

V

A
A
EconoPACK™2ModulmitschnellemTrench/FeldstopIGBT3undHighEfficiencyDiode
EconoPACK™2withfasttrench/fieldstopIGBT3andEmitterControlledHighEfficiencydiode
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
Gesamt-Verlustleistung
Totalpowerdissipation
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
T
vj
= 25°C
T
C
= 80°C, T
vj max
= 150°C
T
C
= 25°C, T
vj max
= 150°C
t
P
= 1 ms
T
C
= 25°C, T
vj max
= 150

V
CES
I
C nom

I
C
I
CRM
P
tot
V
GES




A

W

V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
Gate-Schwellenspannung
Gatethresholdvoltage
Gateladung
Gatecharge
InternerGatewiderstand
Internalgateresistor
Eingangskapazität
Inputcapacitance
Rückwirkungskapazität
Reversetransfercapacitance
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
Anstiegszeit,induktiveLast
Risetime,inductiveload
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
Fallzeit,induktiveLast
Falltime,inductiveload
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
Kurzschlußverhalten
SCdata
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
I
C
= 35 A, V
GE
= 15 V
I
C
= 35 A, V
GE
= 15 V
I
C
= 1,50 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15 V ... +15 V
T
vj
= 25°C
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
V
CE
= 1200 V, V
GE
= 0 V, T
vj
= 25°C
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C
I
C
= 35 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 27
Ω
I
C
= 35 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 27
Ω
I
C
= 35 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 27
Ω
I
C
= 35 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 27
Ω
I
C
= 35 A, V
CE
= 600 V, L
S
= 70 nH
V
GE
= ±15 V
R
Gon
= 27
Ω
I
C
= 35 A, V
CE
= 600 V, L
S
= 70 nH
V
GE
= ±15 V
R
Goff
= 27
Ω
V
GE
≤
15 V, V
CC
= 900 V
V
CEmax
= V
CES
-L
sCE
·di/dt
proIGBT/perIGBT
t
r


t
d off


t
f


E
on

3,50

E
off
I
SC
R
thJC
R
thCH
T
vj op




-40
4,10


t
P
≤
10 µs, T
vj
= 125°C
140

0,19

A
0,60 K/W
K/W
125
°C
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

preparedby:MK
approvedby:RS
dateofpublication:2013-10-03
revision:2.1
1

FS35R12KT3 Related Products

FS35R12KT3 FS35R12KT3BOSA1
Description Gate Drivers MOD IGBT LOW PWR ECONO2-6
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? conform to conform to
Maker Infineon Infineon
Parts packaging code MODULE MODULE
package instruction FLANGE MOUNT, R-XUFM-X28 FLANGE MOUNT, R-XUFM-X28
Contacts 28 28
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Is Samacsys N N
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 55 A 55 A
Collector-emitter maximum voltage 1200 V 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 code R-XUFM-X28 R-XUFM-X28
Number of components 6 6
Number of terminals 28 28
Maximum operating temperature 150 °C 150 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
Nominal off time (toff) 610 ns 610 ns
Nominal on time (ton) 140 ns 140 ns
Base Number Matches 1 1

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