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NDD60N360U1-1G

Description
MOSFET NFET DPAK 600V 114A 360MO
CategoryDiscrete semiconductor    The transistor   
File Size134KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NDD60N360U1-1G Overview

MOSFET NFET DPAK 600V 114A 360MO

NDD60N360U1-1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
package instructionIN-LINE, R-PSIP-T3
Contacts4
Manufacturer packaging code369
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time1 week
Avalanche Energy Efficiency Rating (Eas)64 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)11 A
Maximum drain current (ID)11 A
Maximum drain-source on-resistance0.36 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-T3
JESD-609 codee3
Humidity sensitivity level3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)114 W
Maximum pulsed drain current (IDM)44 A
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
NDD60N360U1
N-Channel Power MOSFET
600 V, 360 mW
Features
100% Avalanche Tested
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJC
Power Dissipation –
R
qJC
Pulsed Drain
Current
Steady
State
Steady
State
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
P
D
I
DM
T
J
,
T
STG
I
S
EAS
V
ISO
dv/dt
http://onsemi.com
V
(BR)DSS
600 V
R
DS(ON)
MAX
360 mW @ 10 V
Symbol
V
DSS
V
GS
I
D
NDD
600
±25
11
6.9
114
44
−55
to
+150
13
64
15
260
Unit
V
V
A
N−Channel MOSFET
D (2)
W
A
°C
A
mJ
V
V/ns
°C
4
1 2
1
1
G (1)
S (3)
t
p
= 10
ms
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (I
D
= 3.5 A)
RMS Isolation Voltage (t = 0.3 sec.,
R.H.
30%, T
A
= 25°C) (Figure 15)
Peak Diode Recovery (Note 1)
Lead Temperature for Soldering Leads
4
2
3
T
L
IPAK
CASE 369D
4
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. I
SD
13 A, di/dt
400 A/ms, V
DS peak
V
(BR)DSS
, V
DD
= 80% V
(BR)DSS
THERMAL RESISTANCE
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient Steady State
(Note 3)
NDD60N360U1
(Note 2)
NDD60N360U1−1
(Note 2)
NDD60N360U1−35G
Symbol
R
qJC
R
qJA
Value
1.1
47
98
95
Unit
°C/W
°C/W
3
2
3
DPAK
CASE 369C
IPAK
CASE 369AD
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
2. Insertion mounted
3. Surface mounted on FR4 board using 1″ sq. pad size
(Cu area = 1.127 in sq [2 oz] including traces)
©
Semiconductor Components Industries, LLC, 2014
January, 2014
Rev. 0
1
Publication Order Number:
NDD60N360U1/D

NDD60N360U1-1G Related Products

NDD60N360U1-1G NDD60N360U1-35G
Description MOSFET NFET DPAK 600V 114A 360MO MOSFET NFET DPAK 600V 114A 360MO
Brand Name ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free
Maker ON Semiconductor ON Semiconductor
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts 4 3
Manufacturer packaging code 369 369AD
Reach Compliance Code not_compliant compliant
ECCN code EAR99 EAR99
Factory Lead Time 1 week 1 week
Avalanche Energy Efficiency Rating (Eas) 64 mJ 64 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 600 V 600 V
Maximum drain current (Abs) (ID) 11 A 11 A
Maximum drain current (ID) 11 A 11 A
Maximum drain-source on-resistance 0.36 Ω 0.36 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSIP-T3 R-PSIP-T3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 114 W 114 W
Maximum pulsed drain current (IDM) 44 A 44 A
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
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