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CMPT2222A-TR

Description
Darlington Transistors TRANSISTOR ARRAYS
Categorysemiconductor    Discrete semiconductor   
File Size395KB,3 Pages
ManufacturerCentral Semiconductor
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Darlington Transistors TRANSISTOR ARRAYS

CMPT2222A-TR Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerCentral Semiconductor
RoHSDetails
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max40 V
Collector- Base Voltage VCBO75 V
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage1 V
Maximum DC Collector Current600 mA
Gain Bandwidth Product fT300 MHz
Maximum Operating Temperature+ 150 C
Continuous Collector Current600 mA
DC Collector/Base Gain hfe Min35 at 100 uA, 10 V
DC Current Gain hFE Max300
Minimum Operating Temperature- 65 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
Pd - Power Dissipation350 mW
Factory Pack Quantity3000
Unit Weight0.000282 oz
CMPT2222A
w w w. c e n t r a l s e m i . c o m
SURFACE MOUNT
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT2222A
type is an NPN silicon transistor manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for small signal, general
purpose and switching applications.
MARKING CODE: C1P
SOT-23 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
UNITS
V
V
V
mA
mW
°C
°C/W
75
40
6.0
600
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=60V
ICBO
ICEV
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
hFE
fT
Cob
Cib
VCB=60V, TA=125°C
VCE=60V, VEB=3.0V
VEB=3.0V
IC=10μA
IC=10mA
IE=10μA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA,
IC=500mA,
IB=15mA
IB=50mA
MAX
10
10
10
10
UNITS
nA
μA
nA
nA
V
V
V
V
V
V
V
75
40
6.0
0.3
1.0
0.6
35
50
75
50
100
40
300
8.0
25
300
1.2
2.0
VCE=10V, IC=0.1mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=1.0V, IC=150mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=20V, IC=20mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VBE=0.5V, IC=0, f=1.0MHz
MHz
pF
pF
R5 (1-February 2010)

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