Doc No.
TT4-EA-13170
Revision.
2
Product Standards
MOS FET
FK8V03060L
FK8V03060L
Silicon N-channel MOS FET
For lithium-ion secondary battery protection circuit
For DC-DC Converter
8
Unit: mm
2.9
0.3
7
6
5
0.16
Low drain-source On-state Resistance
RDS(on) typ. = 22 m (VGS = 4.5 V)
High-speed switching : Qg = 3.8 nC
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1
2
3
4
0.65
Marking Symbol:
3F
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1.
2.
3.
4.
Source
Source
Source
Gate
Panasonic
JEITA
Code
WMini8-F1
SC-115
―
Absolute Maximum Ratings Ta = 25
C
Parameter
Symbol
Drain-source Voltage
Gate-source Voltage
Drain Current (Steady State)
*1
Drain Current (t = 10 s)
*1
Drain Current (Pulsed)
*1,*2
Source Current (Pulsed)
(Body Diode)
*1,*2
Total Power Dissipation (Steady State)
*1
Total Power Dissipation (t = 10 s)
*1
Channel Temperature
Operating Ambient Temperature
Storage Temperature Range
Note)
Rating
33
20
6.5
8
26
6.5
1
1.5
150
-40 to + 85
-55 to +150
Unit
V
V
Internal Connection
(D)
8
(D)
7
(D)
6
(D)
5
VDS
VGS
ID
IDp
ISp
(BD)
PD
Tch
Topr
Tstg
A
W
C
C
C
1
(S)
2
(S)
3
(S)
Pin Name
1.
2.
3.
4.
Source
Source
Source
Gate
5.
6.
7.
8.
Drain
Drain
Drain
Drain
*1 Device mounted on a glass-epoxy board (See Figure 1)
*2 Pulse test: Ensure that the channel temperature does not exceed 150C
Figure1 FR4 Glass-Epoxy Board
25.4 mm × 25.4 mm × 0.8 mm
Page 1 of 6
Established : 2011-06-06
Revised
: 2013-06-24
2.4
2.8
(0.81)
Features
5.
6.
7.
8.
Drain
Drain
Drain
Drain
4
(G)
Doc No.
TT -E -1 3 1 7 0
4 A
Revis n. o
i
2
Product Standards
MOS FET
FK8V03060L
Electrical Characteristics Ta = 25C
3C
Static Characteristics
Parameter
Symbol
Drain-source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-source Leakage Current
Gate-source Threshold Voltage
Drain-source On-state Resistance
*1
Conditions
ID = 1 mA, VGS = 0 V
VDS = 33 V, VGS = 0 V
VGS =
16
V, VDS = 0 V
ID = 0.48 mA, VDS = 10 V
RDS(on)1
ID = 3.3 A, VGS = 10 V
RDS(on)2
ID = 3.3 A, VGS = 4.5 V
VDSS
IDSS
IGSS
Vth
Min
33
Typ
Max
10
10
2.5
20
35
1
15
22
Unit
V
A
A
V
m
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
*2
Rise Time
*2
Turn-off Delay Time
*2
Fall Time
*2
Total Gate Charge
Gate-source Charge
Gate-drain Charge
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS = 10 V, VGS = 0 V
f = 1 MHz
VDD = 15 V, VGS = 0 to 10 V
ID = 3.3 A
VDD = 15 V, VGS = 10 to 0 V
ID = 3.3 A
VDD = 15 V, VGS = 0 to 4.5 V,
ID = 6.5 A
360
70
50
8
3
24
9
3.8
1.4
1.6
pF
ns
nC
Body Diode Characteristic
Diode Forward Voltage
Note)
*1
VSD
IS = 3.3 A, VGS = 0 V
0.8
1.2
V
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
2. *1 Pulse test: Ensure that the channel temperature does not exceed 150C
*2 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time
Page 2 of 6
Establ shed : 2 0 -01 -01 6
i
6
Revised
: 2 0 -01 -23 4
6
Doc No.
TT4-EA-13170
Revision.
2
Product Standards
MOS FET
FK8V03060L
*2 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time
VDD = 15 V
ID = 3.3 A
Vin
10V
0V
PW = 10s
D.C. ≦ 1 %
D
Vout
Vin
G
50
S
90%
Vin
10%
90%
Vout
10%
10%
90%
td(on) tr
td(off)
tf
Page 3 of 6
Established : 2011-06-06
Revised
: 2013-06-24
Doc No.
TT4-EA-13170
Revision.
2
Product Standards
MOS FET
FK8V03060L
Technical Data ( reference )
ID - VDS
10
VGS = 10 V
8
Drain current ID (A)
6
4
3.5 V
2
0
0
0.1
0.2
0.3
Drain-source voltage VDS(V)
3.0 V
4.5 V
Drain current ID (A)
ID - VGS
3
Ta = 85
℃
2
25
℃
4.0 V
1
-40
℃
0
0
1
2
3
4
5
Gate-source voltage VGS (V)
VDS - VGS
Drain-source On-state Resistance
RDS(on) (m)
Drain-source Voltage VDS (V)
0.3
0.25
0.2
ID = 3.3 A
RDS(on) - ID
100
VGS = 4.5 V
0.15
0.1
0.05
0.825 A
1.65 A
10
10.0 V
0
0
2
4
6
8
10
Gate-source Voltage VGS (V)
1
1
Drain Current ID (A)
10
Capacitance - VDS
1000
Ciss
Dynamic Input/Output Characteristics
15
Gate-source Voltage VGS (V)
VDD = 15 V
Capacitance C (pF)
100
Coss
Crss
10
10
5
1
0.1
1
10
100
Drain-source Voltage VDS (V)
0
0
5
10
15
Total Gate Charge Qg (nC)
Page 4 of 6
Established : 2011-06-06
Revised
: 2013-06-24
Doc No.
TT4-EA-13170
Revision.
2
Product Standards
MOS FET
FK8V03060L
Technical Data ( reference )
Vth - Ta
Gate-source Threshold Voltage (V)
3
Drain-source On-resistance
RDS(on) (mΩ)
RDS(on) - Ta
40
VGS = 4.5V
30
20
10 V
10
0
2
1
0
-50
0
50
Temperature Ta (℃)
100
150
-50
0
50
Temperature (℃)
100
150
PD - Ta
Total Power Dissipation PD (W)
1.5
1
0.5
0
0
50
100
150
Temperature Ta (C)
Rth - tsw
Thermal Resistance Rth (C/W)
1000
100
Safe Operating Area
IDp = 26 A
Drain Current ID (A)
100
10
10
1
Operation in this area
is limited by RDS(on)
Ta = 25
C,
Glass epoxy board (25.4
25.4
t0.8 mm)
coated with copper foil,
which has more than 300 mm
2
.
1 ms
10 ms
100 ms
1s
DC
1
0.1
0.1
0.01
0.1
1
10
100
1000
0.01
0.01
0.1
1
10
100
Pulse Width tsw (s)
Drain-source Voltage VDS (V)
Page 5 of 6
Established : 2011-06-06
Revised
: 2013-06-24
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