TP9383 datasheet, PDF - EEWORLD Datasheet

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TP9383: DescriptionRF Bipolar Transistors RF Transistor; Categorysemiconductor Discrete semiconductor; File Size21KB，1 Pages; ManufacturerASI [ASI Semiconductor, Inc]

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TP9383 Overview

RF Bipolar Transistors RF Transistor

TP9383 Parametric

Parameter Name	Attribute value
Product Category	RF Bipolar Transistors
Manufacturer	ASI [ASI Semiconductor, Inc]
RoHS	Details
Transistor Type	Bipolar Power
Technology	Si
Transistor Polarity	NPN
DC Collector/Base Gain hfe Min	20
Collector- Emitter Voltage VCEO Max	25 V
Emitter- Base Voltage VEBO	4 V
Continuous Collector Current	16 A
Maximum Operating Temperature	+ 200 C
Mounting Style	Screw
Package / Case	M177
Packaging	Tray
Minimum Operating Temperature	- 55 C
Operating Frequency	108 MHz
Pd - Power Dissipation	230 W
Type	RF Bipolar Power

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TP9383

NPN RF POWER TRANSISTOR

DESCRIPTION:

The

ASI TP9383

is a Common

Emitter Device Designed for FM

Broadcast Transmitter Applications in

the 88 to 108 MHz Band.

FEATURES INCLUDE:

•

High Efficiency

•

Gold Metallization

•

Emitter Ballasting

PACKAGE STYLE 500 4L FLG

MAXIMUM RATINGS

I

C

V

CBO

P

DISS

T

J

T

STG

θ

JC

16 A

60 V

230 W @ T

C

= 25

O

C

-55

O

C to+200

O

C

-55

O

C to+200

O

C

0.75

O

C/W

T

C

= 25

O

C

1 = COLLECTOR

2 = BASE

3 & 4 = EMITTER

CHARACTERISTICS

SYMBOL

BV

CBO

BV

CER

BV

CEO

BV

EBO

h

FE

C

OB

P

G

η

C

TEST CONDITIONS

I

C

= 100 mA

I

C

= 5.0 mA

I

C

= 100 mA

I

E

= 20 mA

V

CE

= 5.0 V

V

CB

= 28 V

V

CE

= 28V

P

OUT

= 150 W

I

C

= 1.0 A

f = 1.0 MHz

f = 108 MHz

R

BE

= 10

Ω

MINIMUM TYPICAL MAXIMUM UNITS

60

55

25

4.0

20

150

9.2

70

10.0

V

---

pF

dB

%

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1200

•

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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