SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 -NOVEMBER 1998
FEATURES
FCX789A
C
*
*
*
*
2W POWER DISSIPATION
8A Peak Pulse Current
Excellent H
FE
Characteristics up to 10 Amps
Low Saturation Voltage E.g. 10mv Typ.
FCX688B
789
Complimentary Type -
Partmarking Detail -
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current **
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
-25
-25
-5
-8
-3
1 †
2 ‡
-55 to +150
UNIT
V
V
V
A
A
W
W
°C
† recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions when soldering surface mount components.
FCX789A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
MIN.
-25
-25
-5
-0.1
-0.1
-190
-400
-320
-0.9
-0.8
300
230
180
75
100
225
25
35
400
800
TYP.
MAX.
UNIT
V
V
V
µA
µA
mV
mV
mV
V
V
CONDITIONS.
I
C
=-100µA
I
C
=-10mA*
I
E
=-100µA
V
CB
=-15V
V
EB
=-4V
I
C
=-1A, I
B
=-10mA*
I
C
=-2A, I
B
=-20mA*
I
C
=-3A, I
B
=-100mA*
I
C
=-1A, I
B
=-10mA*
IC=-1A, V
CE
=-2V*
I
C
=-10mA, V
CE
=-2V
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
MHz
pF
pF
ns
ns
I
C
=-50mA, V
CE
=-5V
f=50MHz
V
EB
=-0.5V, f=1MHz
V
CB
=-10V, f=1MHz
I
C
=-500mA, I
B1
=-50mA
I
B2
=-50mA, V
CC
=-10V
V
BE(sat)
V
BE(on)
h
FE
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
f
T
C
ibo
C
obo
t
on
t
off
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤2%
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