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FQNL2N50BBU_Q

Categorysemiconductor    Discrete semiconductor   
File Size852KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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FQNL2N50BBU_Q Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerFairchild
RoHSNo
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-92-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current350 mA
Rds On - Drain-Source Resistance5.3 Ohms
Vgs - Gate-Source Voltage30 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Channel ModeEnhancement
PackagingBulk
Fall Time25 ns
Forward Transconductance - Min0.72 S
Height5.33 mm
Length5.2 mm
Pd - Power Dissipation1.5 W
ProductMOSFET Small Signal
Rise Time25 ns
Transistor Type1 N-Channel
TypeMOSFET
Typical Turn-Off Delay Time10 ns
Typical Turn-On Delay Time6 ns
Width4.19 mm
Unit Weight0.006314 oz
FQNL2N50B
— N-Channel QFET
®
MOSFET
November 2013
FQNL2N50B
N-Channel QFET
®
MOSFET
500 V,
0.35
A,
5.3
Description
Features
0.35
A,
500
V, R
DS(on)
=
5.3
(Max.) @ V
GS
= 10 V,
I
D
=
0.175
A
• Low Gate Charge (Typ.
6
nC)
• Low Crss (Typ.
4
pF)
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
D
G
GDS
TO-92L
T
C
= 25°C unless otherwise noted.
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQNL2N50BTA
500
0.35
0.22
1.4
±
30
(Note 1)
(Note 1)
(Note 2)
Unit
V
A
A
A
V
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering,
1/8" from case for 5 seconds.
0.35
0.15
4.5
1.5
0.012
-55 to +150
300
Thermal Characteristics

+
θ



FQNL2N50BTA
83

6?
Thermal Resistance, Junction-to-Ambient, Max.
©2001 Fairchild Semiconductor Corporation
FQNL2N50B
Rev. C1
1
www.fairchildsemi.com
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