FCAS30DN60BB Smart Power Module
January 2008
FCAS30DN60BB
Smart Power Module for SRM
Features
• 600V-30A 2-phase asymmetric bridge IGBT converter for
SRM drive including control ICs for gate driving and protec-
tion
• Single-grounded power supply due to built-in HVIC
• Isolation rating of 1500Vrms/min.
General Description
FCAS30DN60BB is an advanced smart power module for SRM
drive that Fairchild has newly developed and designed to pro-
vide very compact and high performance SRM motor drives
mainly targeting low-power SRM application especially for a
vacuum air cleaner. It combines optimized circuit protection and
drive matched to low-loss IGBTs. System reliability is further
enhanced by the integrated under-voltage lock-out and short-
circuit protection. The high speed built-in HVIC provides opto-
coupler-less IGBT gate driving capability that further reduce the
overall size of the system. In addition the incorporated HVIC
facilitates the use of single-supply drive topology enabling the
FCAS30DN60BB to be driven by only one drive supply voltage
without negative bias.
Applications
• 2-phase SRM drives for home application vacuum cleaner.
Figure 1.
©2008 Fairchild Semiconductor Corporation
1
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FCAS30DN60BB Rev. A
FCAS30DN60BB Smart Power Module
Integrated Power Functions
• 600V-30A IGBT asymmetric converter for 2-phase SRM drives (Please refer to Figure 3)
Integrated Drive, Protection and System Control Functions
• For high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting
Control circuit under-voltage (UV) protection
Note) Available bootstrap circuit example is given in Figures 11.
• For low-side IGBTs: Gate drive circuit, Short circuit protection (SC)
Control supply circuit under-voltage (UV) protection
• Fault signaling: Corresponding to a UV fault (Low-side supply)
• Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input
Pin Configuration
#1
(1)V-
((2)V-)
((3)U-)
(4)U-
(5)V
S(V)
/V+
(6)V
B(V)
(7)Vth
(8)IN
(VH)
(9)V
S(U)
/U+
(10)V
B(U)
(11)IN
(UH)
(13)C
FOD
(15)IN
(VL)
(17)V
CC
(19)N
(12)C
SC
(14)V
FO
(16)IN
(UL)
(18)COM
(20)P
#20
Figure 2.
FCAS30DN60BB Rev. A
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FCAS30DN60BB Smart Power Module
Pin Descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Pin Name
V-
( V- )
( U- )
U-
VS(V)/V+
VB(V)
Vth
IN(VH)
VS(U)/U+
VB(U)
IN(UH)
C
SC
C
FOD
V
FO
IN(VL)
IN(UL)
V
CC
COM
N
P
Output for V- Leg
Output for V- Leg
Output for U- Leg
Output for U- Leg
Pin Description
Output for V+ Leg / High-side Bias Voltage Ground for V-phase IGBT Gate Driving
High-side Bias Voltage for V-phase IGBT Gate Driving
Thermistor Output
Signal Input for V-phase High-side IGBT
Output for U+ Leg / High-side Bias Voltage Ground for U-phase IGBT Gate Driving
High-side Bias Voltage for U-phase IGBT Gate Driving
Signal Input for U-phase High-side IGBT
Capacitor (Low-pass Filter) for Short-Current Detection
Capacitor for Fault Output Duration Time Selection
Fault Output
Signal Input for V-phase Low-side IGBT
Signal Input for U-phase Low-side IGBT
Common Bias Voltage for IC and IGBTs Driving
Common Supply Ground
Negative DC–Link Input
Positive DC–Link Input
FCAS30DN60BB Rev. A
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FCAS30DN60BB Smart Power Module
Internal Equivalent Circuit and Input/Output Pins
(10) V
B(U)
(11) IN
(UH)
VCC
IN(UH)
COM
VB
OUT
VS
(20) P
(9) V
S(U)
/ U+
(6) V
B(V)
(8) IN
(VH)
VCC
IN(VH)
COM
VB
OUT
VS
(5) V
S(V)
/ V+
(3) U-
(4) U-
(12) C
SC
(13) C
FOD
(14) V
FO
(16) IN
(UL)
(15) IN
(VL)
(17) V
CC
(18) COM
Csc
Cfod
Vfo
IN(UL)
IN(VL)
VCC
COM(L)
OUT(VL)
OUT(UL)
(1) V-
(2) V-
(7) V
(TH)
(19) N
Note:
1. The power side is composed of two dc-link input terminals and four output terminals.
Figure 3.
FCAS30DN60BB Rev. A
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FCAS30DN60BB Smart Power Module
Absolute Maximum Ratings
(T
J
= 25°C,
Inverter Part
Symbol
V
PN(Surge)
V
CES
± I
C
± I
CP
P
C
T
J
Note:
Unless Otherwise Specified)
Parameter
Supply Voltage (Surge)
Collector-emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Collector Dissipation
Operating Junction Temperature
T
C
= 25°C
Conditions
Applied between P- N
Rating
550
600
30
60
39
-20 ~ 125
Units
V
V
A
A
W
°C
T
C
= 25°C, Under 1ms Pulse Width
T
C
= 25°C per One IGBT
(Note 1)
1. The maximum junction temperature rating of the power chips integrated within the module is 150
°
C(@T
C
≤
100
°
C). However, to insure safe operation, the average junction
temperature should be limited to T
J(ave)
≤
125
°
C (@T
C
≤
100
°
C)
Control Part
Symbol
V
CC
V
BS
V
IN
V
FO
I
FO
V
SC
Parameter
Control Supply Voltage
High-side Control Bias Voltage
Input Signal Voltage
Fault Output Supply Voltage
Fault Output Current
Current Sensing Input Voltage
Conditions
Applied between V
CC
- COM
Applied between V
B
- V
S
Applied between IN
(H)
, IN
(L)
- COM
Applied between V
FO
- COM
Sink Current at V
FO
Pin
Applied between C
SC
- COM
Rating
20
20
-0.3~17
-0.3~V
CC
+0.3
5
-0.3~V
CC
+0.3
Units
V
V
V
V
mA
V
Total System
Symbol
V
PN(PROT)
T
STG
V
ISO
Parameter
Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
Storage Temperature
Isolation Voltage
Conditions
V
CC
= V
BS
= 13.5 ~ 16.5V
T
J
= 125°C, Non-repetitive, less than 2μs
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to IMS
Rating
400
-40 ~ 125
1500
Units
V
°C
V
rms
Thermal Resistance
Symbol
R
th(j-c)Q
R
th(j-c)F
Note:
Parameter
Junction to Case Thermal
Resistance
Conditions
Each IGBT under Operating Condition
Each FWDi under Operating Condition
Min.
-
-
Typ.
-
-
Max.
3.2
7.5
Units
°C/W
°C/W
2. For the measurement point of case temperature (T
C
), please refer to Figure 2.
Package Marking & Ordering Information
Device Marking
FCAS30DN60BB
Device
FCAS30DN60BB
Package
SPM20-BC
Reel Size
_
Tape Width
_
Quantity
11
FCAS30DN60BB Rev. A
5
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