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FDB0165N807L N-Channel PowerTrench
®
MOSFET
December 2015
FDB0165N807L
80 V, 310 A, 1.6 mΩ
Features
Fast Switching Speed
Low Gate Charge
N-Channel
PowerTrench
®
MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench
®
process that has
been especially tailored to minimize the on-state resistance
while maintaining superior ruggedness and switching
performance for industrial applications.
Max r
DS(on)
= 1.6 mΩ at V
GS
= 10 V, I
D
= 36 A
High Performance Trench Technology for Extremely Low
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= 36 A
(Note 2)
0.8
85
90
310
1780
1.2
136
144
A
A
V
ns
nC
I
F
= 36 A, di/dt = 100 A/μs
Notes:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 40 °C/W when mounted on a 1 in
2
pad of 2 oz copper.
b) 62.5 °C/W when mounted on a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300
μs,
Duty cycle < 2.0 %.
3. E
AS
of 1083 mJ is based on starting T
J
= 25
°
C, L = 0.3 mH, I
AS
= 85 A, V
DD
= 72 V, V
GS
= 10 V. 100% test at L = 0.1 mH, I
AS
= 123 A.
4. Pulsed Id please refer to Figure 10 “Forward Bias Safe Operating Area” for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
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