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FDB8442 N-Channel PowerTrench
®
MOSFET
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
Drain to Source Voltage
V
GS
I
D
E
AS
P
D
Gate to Source Voltage
Drain Current Continuous (T
C
<158 C, V
GS
= 10V)
o
o
Parameter
Ratings
40
±20
80
o
Units
V
V
A
mJ
W
W/
o
C
o
Drain Current Continuous (T
amb
= 25 C, V
GS
= 10V, with R
θJA
= 43 C/W)
Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Derate above
25
o
C
(Note 1)
28
See Figure 4
720
254
1.7
-55 to +175
T
J
, T
STG
Operating and Storage Temperature
C
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient TO-263,
lin
2
copper pad area
0.59
43
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
FDB8442
Device
FDB8442
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250µA, V
GS
= 0V
V
DS
= 32V
V
GS
= 0V
V
GS
=
±20V
T
J
= 150°C
40
-
-
-
-
-
-
-
-
1
250
±100
V
µA
nA
On Characteristics
V
GS(th)
r
DS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V
DS
= V
GS
, I
D
= 250µA
I
D
= 80A, V
GS
= 10V
I
D
= 80A, V
GS
= 10V,
T
J
= 175°C
2
-
-
2.9
2.1
3.6
4
2.9
5.0
mΩ
V
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Q
g(TOT)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
V
GS
= 0.5V, f = 1MHz
V
GS
= 0 to 10V
V
GS
= 0 to 2V
V
DD
= 20V
I
D
= 80A
I
g
= 1mA
-
-
-
-
-
-
-
-
-
12200
1040
640
1.0
181
23
49
26
41
-
-
-
-
235
30
-
-
-
pF
pF
pF
Ω
nC
nC
nC
nC
nC
FDB8442 Rev. C0
2
www.fairchildsemi.com
FDB8442 N-Channel PowerTrench
®
MOSFET
Typical Characteristics
POWER DISSIPATION MULIPLIER
1.2
I
D
, DRAIN CURRENT (A)
300
250
200
150
100
50
0
25
CURRENT LIMITED
BY PACKAGE
V
GS
= 10V
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE
(
o
C
)
175
50
75
100
125
150
175
T
C
, CASE TEMPERATURE
(
o
C
)
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
1
NORMALIZED THERMAL
IMPEDANCE, Z
θ
JC
DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.01
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
0.1
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
0.01
SINGLE PULSE
1E-3
-5
10
10
-4
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
V
GS
= 10V
10
10
10
t, RECTANGULAR PULSE DURATION(s)
-3
-2
-1
10
0
10
1
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I
DM
,
PEAK CURRENT (A)
1000
I = I
25
175 - T
C
150
100
SINGLE PULSE
10
-5
10
10
-4
10
10
10
t, RECTANGULAR PULSE DURATION(s)
-3
-2
-1
10
0
10
1
Figure 4. Peak Current Capability
FDB8442 Rev. C0
4
www.fairchildsemi.com
Programming Basics
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