Advance Technical Information
TrenchT2
TM
HiperFET
N-Channel Power
MOSFET
FMM110-015X2F
3
3
5
5
4
4
V
DSS
I
D25
T1
R
DS(on)
t
rr(typ)
=
=
≤
=
150V
53A
20mΩ
Ω
85ns
Phase Leg Topology
1
1
2
2
T2
ISOPLUS i4-Pak
TM
Symbol
T
J
T
JM
T
stg
V
ISOLD
T
L
T
SOLD
F
C
Test Conditions
Maximum Ratings
-55 ... +175
175
-55 ... +175
°C
°C
°C
~V
°C
°C
N/lb.
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
- UL Recognized Package
- Isolated Mounting Surface
- 2500V Electrical Isolation
Avalanche Rated
Low Q
G
Low Drain-to-Tab Capacitance
Low Package Inductance
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
1
Isolated Tab
50/60H
Z
, RMS, t = 1min, Leads-to-Tab
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
2500
300
260
20..120 / 4.5..27
5
Features
Symbol
V
DSS
V
DGR
V
GSM
I
D25
I
DM
I
A
E
AS
dV/dt
P
D
Test Conditions
T
J
= 25°C to 175°C
T
J
= 25°C to 175°C, R
GS
= 1MΩ
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
175°C
T
C
= 25°C
Maximum Ratings
150
150
±
30
53
300
55
800
10
180
V
V
V
A
A
A
mJ
V/ns
W
Symbol
C
P
d
S
,d
A
d
S
,d
A
Weight
Test Conditions
Coupling Capacitance Between Shorted
Pins and Mounting Tab in the Case
Pin - Pin
Pin - Backside Metal
Characteristic Values
Min.
Typ.
Max.
40
1.7
5.5
9
pF
mm
mm
g
© 2009 IXYS CORPORATION, All Rights Reserved
DS100145(04/09)
FMM110-015X2F
Symbol
Test Conditions
2
(T
J
= 25°C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
Test Conditions
3
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= 100A, V
GS
= 0V, Note 1
I
F
= 55A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
85
6.80
0.29
0.15
V
GS
= 10V, V
DS
= 0.5
V
DSS
, I
D
= 55A
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 V
DSS
, I
D
= 55A
R
G
= 3.3Ω (External)
V
GS
= 0V, V
DS
= 25 V, f = 1 MHz
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 250μA
V
GS
=
±20
V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
V
GS
= 10V, I
D
= 55A, Note 1
V
DS
= 10V, I
D
= 55A, Note 1
75
115
8600
685
77
33
16
33
18
150
42
46
T
J
= 150°C
Characteristic Values
Min.
Typ.
Max.
150
2.5
4.5
±
200
V
V
nA
ISOPLUS i4-Pak
TM
Outline
2
μA
500
μA
20 mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.83
°C/W
°C/W
Ref: IXYS CO 0077 R0
Characteristic Values
T
J
= 25°C Unless Otherwise Specified)
Min. Typ.
Max.
110
440
1.3
A
A
V
ns
A
μC
Note 1: Pulse Test, t
≤
300μs, Duty Cycle, d
≤
2 %.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
FMM110-015X2F
Fig. 1. Output Characteristics
@ 25ºC
110
100
90
80
V
GS
= 15V
10V
9V
8V
7V
350
300
250
V
GS
= 15V
10V
8V
Fig. 2. Extended Output Characteristics
@ 25ºC
I
D
- Amperes
I
D
- Amperes
70
60
50
40
30
20
10
0
0.0
0.2
0.4
0.6
0.8
200
7V
150
100
50
0
6V
5V
6V
1.0
1.2
1.4
0
2
4
6
8
10
12
14
16
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics
@ 150ºC
110
100
90
80
V
GS
= 15V
10V
9V
8V
3.4
3.0
2.6
Fig. 4. R
DS(on)
Normalized to I
D
= 55A Value
vs. Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
I
D
- Amperes
70
60
50
40
30
20
10
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
7V
2.2
1.8
1.4
1.0
0.6
0.2
I
D
= 110A
I
D
= 55A
6V
2.8
3.2
3.6
-50
-25
0
25
50
75
100
125
150
175
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 55A Value
vs. Drain Current
5.0
4.5
4.0
V
GS
= 10V
15V
- - - -
T
J
= 175ºC
120
110
100
90
Fig. 6. Drain Current vs. Case Temperature
R
DS(on)
- Normalized
3.5
I
D
- Am
peres
T
J
= 25ºC
80
70
60
50
40
30
20
10
0
3.0
2.5
2.0
1.5
1.0
0.5
0
50
100
150
200
250
300
-50
-25
0
25
50
75
100
125
150
175
I
D
- Amperes
T
C
- Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved
FMM110-015X2F
Fig. 7. Input Admittance
160
140
120
180
160
140
Fig. 8. Transconductance
T
J
= - 40ºC
100
80
60
40
20
0
3.4
3.8
4.2
4.6
g
f s
- Siemens
I
D
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
120
100
80
60
40
20
0
25ºC
150ºC
5.0
5.4
5.8
6.2
6.6
0
20
40
60
80
100
120
140
160
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
350
300
250
Fig. 10. Gate Charge
10
9
8
7
V
DS
= 75V
I
D
= 55A
I
G
= 10mA
I
S
- Amperes
200
150
100
50
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
T
J
= 150ºC
T
J
= 25ºC
V
GS
- Volts
6
5
4
3
2
1
0
0
20
40
60
80
100
120
140
160
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
100,000
1,000.0
Fig. 12. Forward-Bias Safe Operating Area
R
DS(on)
Limit
100.0
25µs
100µs
10.0
f
= 1 MHz
Capacitance - PicoFarads
10,000
Ciss
1,000
Coss
100
Crss
10
0
5
10
15
20
25
30
35
40
I
D
- Amperes
1ms
1.0
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
0.1
1
10
100
1000
100ms
10ms
V
DS
- Volts
V
DS
- Volts
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_110N15T2(61)4-23-09-A
FMM110-015X2F
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
20
19
18
R
G
= 3.3Ω
V
GS
= 10V
V
DS
= 75V
19
20
R
G
= 3.3Ω
V
GS
= 10V
V
DS
= 75V
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
t
r
- Nanoseconds
t
r
- Nanoseconds
17
16
15
I
14
13
12
25
35
45
55
65
75
85
95
105
115
125
D
18
T
J
= 125ºC
I
D
= 110A
17
= 55A
16
T
J
= 25ºC
15
14
55
60
65
70
75
80
85
90
95
100
105
110
T
J
- Degrees Centigrade
I
D
- Amperes
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
280
240
200
160
120
80
40
0
2
4
6
8
10
12
14
16
18
20
I
D
= 55A
90
28
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
80
t
r
V
DS
= 75V
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
80
t
f
26
V
DS
= 75V
t
d(off)
- - - -
70
R
G
= 3.3Ω, V
GS
= 10V
t
d(on)
- Nanoseconds
t
r
- Nanoseconds
t
f
- Nanoseconds
70
I
D
= 110A
60
50
40
30
20
t
d(off)
- Nanoseconds
24
60
22
I
D
= 55A, 110A
20
50
40
18
30
16
25
35
45
55
65
75
85
95
105
115
20
125
R
G
- Ohms
T
J
- Degrees Centigrade
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
23
80
120
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
250
t
f
22
V
DS
= 75V
t
d(off)
- - - -
70
100
t
f
V
DS
= 75V
t
d(off)
- - - -
210
R
G
= 3.3Ω, V
GS
= 10V
T
J
= 125ºC, V
GS
= 10V
t
d(off)
- Nanoseconds
t
d(off)
- Nanoseconds
t
f
- Nanoseconds
t
f
- Nanoseconds
21
60
80
I
D
= 55A
170
20
T
J
= 125ºC
T
J
= 25ºC
50
60
130
19
40
40
I
20
D
90
= 110A
50
18
30
17
55
60
65
70
75
80
85
90
95
100
105
20
110
0
2
4
6
8
10
12
14
16
18
20
10
I
D
- Amperes
R
G
- Ohms
© 2009 IXYS CORPORATION, All Rights Reserved
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