The FDN372S is designed to replace a single MOSFET
and Schottky diode, used in synchronous DC-DC
power supplies, with a single integrated component.
This 30V MOSFET is designed to maximize power
conversion efficiency with low Rds(on) and low gate
charge. The FDN372S includes an integrated Schottky
diode using Fairchild Semiconductor’s monolithic
SyncFET process, making it ideal as the low side
switch in a synchronous converter.
Features
•
2.6 A, 30 V.
R
DS(ON)
= 40 mΩ @ V
GS
= 10 V
R
DS(ON)
= 50 mΩ @ V
GS
= 4.5 V
•
Low gate charge
•
Fast switching speed
•
High performance trench technology for extremely
low R
DS(ON)
Applications
•
•
DC-DC Converter
Motor Drives
D
D
S
G
S
SuperSOT -3
TM
G
T
A
=25
o
C unless otherwise noted
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Parameter
Ratings
30
±
16
(Note 1a)
Units
V
V
A
W
°C
2.6
10
0.5
0.46
–55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
372
Device
FDN372S
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
2002
Fairchild Semiconductor Corporation
FDN372S Rev C(W)
FDN372S
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
(Note 2)
Test Conditions
V
GS
= 0 V,
I
D
= 1 mA
Min
30
Typ
Max Units
V
Off Characteristics
I
D
= 10 mA, Referenced to 25°C
V
DS
= 24 V,
V
GS
= ±16 V,
V
GS
= 0 V
V
DS
= 0 V
24
500
±100
mV/°C
µA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
,
I
D
= 1 mA
1
1.4
–3.2
32
36
45
3
V
mV/°C
I
D
= 10 mA, Referenced to 25°C
V
GS
= 10 V,
I
D
= 2.6 A
I
D
= 2.3 A
V
GS
= 4.5 V,
V
GS
= 10V, I
D
= 2.6 A, T
J
= 125°C
V
GS
= 10 V,
V
DS
= 5 V
V
DS
= 10V,
I
D
= 2.6 A
40
50
60
mΩ
I
D(on)
g
FS
10
15
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
(Note 2)
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 15 mV
V
GS
= 0 V,
630
115
45
pF
pF
pF
Ω
f = 1.0 MHz
2.4
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
7
5
21
2.7
14
10
34
5.4
8.1
1.9
1.7
ns
ns
ns
ns
nC
nC
nC
V
DS
= 15 V,
V
GS
= 5 V
I
D
= 2.6 A,
5.8
1.3
1.2
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
trr
Qrr
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V,
I
S
= 0.7 A
(Note 2)
0.7
440
10
(Note 2)
A
mV
ns
nC
700
I
F
= 2.6 A,
d
iF
/d
t
= 300 A/µs
4
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 250°C/W when mounted on a
0.02 in
2
pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
FDN372S Rev C(W)
FDN372S
Typical Characteristics
25
2.2
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 10V
20
I
D
, DRAIN CURRENT (A)
4.5V
3.5V
3.0V
2
V
GS
= 2.5V
1.8
1.6
1.4
1.2
1
0.8
15
10
3.5V
4.5V
5.0V
4 5V
2.5V
5
10V
0
0
1
2
3
4
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
10
20
30
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.12
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 2.6A
V
GS
= 10V
1.4
R
DS(ON)
, ON-RESISTANCE (OHM)
0.11
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
I
D
= 1.3A
1.2
T
A
= 125
o
C
1
0.8
T
A
= 25
o
C
0.6
-50
-25
0
25
50
75
o
0.02
100
125
1
2
3
4
5
6
7
8
9
10
T
J
, JUNCTION TEMPERATURE ( C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
10
V
DS
= 10V
I
D
, DRAIN CURRENT (A)
8
T
A
= -55 C
25
o
C
I
S
, REVERSE DRAIN CURRENT (A)
o
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
V
GS
= 0V
1
6
125 C
4
o
0.1
T
A
= 125
o
C
25
o
C
-55
o
C
0.01
2
0.001
0
0.5
1.5
2.5
3.5
4.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.0001
0.0
0.2
0.4
0.6
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN372S Rev C(W)
FDN372S
Typical Characteristics
5
V
GS
, GATE-SOURCE VOLTAGE (V)
800
I
D
= 2.6A
4
V
DS
= 10V
15V
C
iss
600
f = 1 MHz
V
GS
= 0 V
20V
3
CAPACITANCE (pF)
400
2
1
200
C
oss
C
rss
0
0
1
2
3
4
5
6
7
Q
g
, GATE CHARGE (nC)
0
0
5
10
15
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
20
Figure 8. Capacitance Characteristics.
R
DS(ON)
LIMIT
I
D
, DRAIN CURRENT (A)
10
1ms
10ms
1
DC
1s
100ms
100µs
15
SINGLE PULSE
R
θJA
= 270°C/W
T
A
= 25°C
10
0.1
V
GS
= 10V
SINGLE PULSE
R
θJA
= 270
o
C/W
T
A
= 25
o
C
5
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL
RESISTANCE
D = 0.5
R
θJA
(t) = r(t)* R
θJA
0.2
R
θJA
= 270 C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
o
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN372S Rev C(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx
FACT
ActiveArray
FACT Quiet Series
Bottomless
FAST
â
CoolFET
FASTr
CROSSVOLT
FRFET
DOME
GlobalOptoisolator
EcoSPARK
GTO
2
TM
E CMOS
HiSeC
EnSigna
TM
I
2
C
Across the board. Around the world.
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Programmable Active Droop
DISCLAIMER
ImpliedDisconnect PACMAN
POP
ISOPLANAR
Power247
LittleFET
PowerTrench
â
MicroFET
QFET
MicroPak
QS
MICROWIRE
QT Optoelectronics
MSX
Quiet Series
MSXPro
RapidConfigure
OCX
RapidConnect
OCXPro
â
SILENT SWITCHER
â
OPTOLOGIC
SMART START
OPTOPLANAR
SPM
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TruTranslation
UHC
UltraFET
â
VCX
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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