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DTC143XE-RK

Description
Bipolar Transistors - BJT Digital Transistor NPN
Categorysemiconductor    Discrete semiconductor   
File Size160KB,3 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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DTC143XE-RK Overview

Bipolar Transistors - BJT Digital Transistor NPN

DTC143XE-RK Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerTaiwan Semiconductor
RoHSDetails
Mounting StyleSMD/SMT
Package / CaseSOT-523-3
Transistor PolarityNPN
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity3000
Unit Weight0.000071 oz
DTC143 TM/TE/TUA/TCA/TSA
NPN Small Signal Transistor
Small Signal Product
Features
Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistor
(see equivalent circuit).
The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
Equivalent Circuit
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code.
Ordering Information (example)
Part No.
Package
Packing
Note : Detail please see "Ordering Information(detail, example)" below
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
No
DT t
Re
C1 c
43 om
TE m
en
/T
de
UA d
/T
CA
operation, marking device design easy.
Packing code
RM
Packing code
(Green)
RMG
Marking
03
Manufacture code
M0
DTC143 TM
SOT-723
8K / 7" Reel
Only the on/off conditions need to be set for
Parameter
Symbol
PD
Value
Power Dissipation
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
TM
100
TE
150
V
BR(CBO)
V
BR(CEO)
V
BR(EBO)
I
C
TUA / TCA
200
50
50
5
TSA
300
Unit
mW
V
V
V
mA
°C
Collector-Emitter Voltage
100
Junction and Storage Temperature Range
T
J
, T
STG
-55 to + 150
Notes : 1. Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics
Parameter
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
R
1
f
T
Min
50
50
5
Typ
Max
Condtion
Ic=50μA
Ic=1mA
I
E
=50μA
V
EB
=4V
Unit
V
V
V
μA
μA
V
KΩ
Collector-Emitter Breakdown Voltage
0.5
V
CB
=50V
0.5
0.3
V
CE(sat)
100
3.29
4.7
250
I
C
=5mA , I
B
=0.25mA
V
CE
=5V , I
C
=1mA
V
CE
=10V , I
E
=5mA , f=100MHz
600
6.11
MHz
Version : B13

DTC143XE-RK Related Products

DTC143XE-RK DTC143TE-RK DTC143TSA DTC143XUA-RR
Description Bipolar Transistors - BJT Digital Transistor NPN Bipolar Transistors - BJT Digital Transistor NPN Bipolar Transistors - BJT Digital Transistor NPN Bipolar Transistors - BJT Digital Transistor NPN
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT - Bipolar Transistors - BJT
Manufacturer Taiwan Semiconductor Taiwan Semiconductor - Taiwan Semiconductor
RoHS Details Details - Details
Mounting Style SMD/SMT SMD/SMT - SMD/SMT
Package / Case SOT-523-3 SOT-523-3 - SOT-323-3
Transistor Polarity NPN NPN - NPN
Packaging Reel Reel - Reel
Factory Pack Quantity 3000 3000 - 3000
Unit Weight 0.000071 oz 0.000071 oz - 0.000176 oz

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