The DG444B, DG445B are monolithic quad analog switches
designed to provide high speed, low error switching of
analog and audio signals. The DG444B, DG445B are
upgrades to the original DG444, DG445.
Combing low on-resistance (45
,
typ.) with high speed
(t
ON
120 ns, typ.), the DG444B, DG445B are ideally suited
for Data Acquisition, Communication Systems, Automatic
Test Equipment, or Medical Instrumentation. Charge
injection has been minimized on the drain for use in
sample-and-hold circuits.
The DG444B, DG445B are built using Vishay Siliconix’s
high-voltage silicon-gate process. An epitaxial layer prevents
latchup.
When on, each switch conducts equally well in both
directions and blocks input voltages to the supply levels
when off.
FEATURES
•
•
•
•
•
•
Low On-Resistance: 45 W
Low Power Consumption: 1 mW
Fast Switching Action - t
ON
: 120 ns
Low Charge Injection
TTL/CMOS-Compatible Logic
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Low Signal Errors and Distortion
Reduced Power Supply Consumption
Faster Throughput
Reduced Pedestal Errors
Simple Interfacing
Audio Switching
Data Acquisition
Sample-and-Hold Circuits
Communication Systems
Automatic Test Equipment
Medical Instruments
BENEFITS
•
•
•
•
•
•
•
•
•
•
•
APPLICATIONS
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG444B
Dual-In-Line and SOIC
IN
1
D
1
S
1
V-
GND
S
4
D
4
IN
4
1
2
3
4
5
6
7
8
Top View
16
15
14
13
12
11
10
9
IN
2
D
2
S
2
V+
V
L
S
3
D
3
IN
3
TRUTH TABLE
Logic
0
1
Logic "0"
0.8
V
Logic "1"
2.4
V
DG444B
ON
OFF
DG445B
OFF
ON
DG444B
QFN16 (4 x 4 mm)
D
1
IN
1
IN
2
D
2
16
15
14
13
ORDERING INFORMATION
Temp Range
Package
Part Number
DG444BDJ
DG444BDJ-E3
DG445BDJ
DG445BDJ-E3
DG444BDY-E3
DG444BDY-T1-E3
DG445BDY-E3
DG445BDY-T1-E3
DG444BDN-T1-E4
DG445BDN-T1-E4
S
1
V-
GND
S
4
1
2
3
4
12
11
10
9
S
2
V+
V
L
S
3
16-pin Plastic DIP
- 40 °C to 85 °C
16-pin Narrow SOIC
5
6
7
8
D
4
IN
4
IN
3
D
3
Top View
16 pin QFN 4 x 4 mm
(Variation 1)
Document Number: 72626
S13-1287-Rev. C, 27-May-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG444B, DG445B
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
V+ to V-
GND to V-
V
L
Digital Inputs
a
, V
S
, V
D
Continuous Current (Any Terminal)
Current, S or D (Pulsed at 1 ms, 10 % duty cycle)
Storage Temperature
16-pin Plastic DIP
c
Power Dissipation (Package)
b
16-pin Narrow Body SOIC
d
QFN-16
Symbol
Limit
44
25
(GND - 0.3 V) to (V+) + 0.3 V
(V-) - 2 to (V+) + 2 or
30 mA, whichever occurs first
30
100
- 65 to 125
470
640
850
mW
mA
°C
V
Unit
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/°C above 75 °C.
d. Derate 8 mW/°C above 75 °C.
www.vishay.com
2
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 72626
S13-1287-Rev. C, 27-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG444B, DG445B
Vishay Siliconix
SPECIFICATIONS
(for dual supplies)
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
Parameter
Analog Switch
Analog Signal Range
d
Drain-Source
On-Resistance
Switch Off Leakage Current
I
D(off)
Channel On Leakage Current
Digital Control
Input Voltage Low
Input Voltage High
Input Current V
IN
Low
Input Current V
IN
High
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
e
Off Isolation
e
Crosstalk (Channel-to-Channel)
d
Source Off Capacitance
Drain Off Capacitance
Channel On Capacitance
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
I+
I-
I
IN
V
IN
= 0 V or 5 V
Room
Full
Room
Full
Room
Full
1
5
-1
-5
1
5
µA
t
ON
t
OFF
Q
OIRR
X
TALK
C
S(off)
C
D(off)
C
D(on)
R
L
= 1 k, C
L
= 35 pF
V
S
= ± 10 V, See Figure 2
C
L
= 1 nF, V
S
= 0 V
V
gen
= 0 V, R
gen
= 0
R
L
= 50
, C
L
= 15 pF
V
S
= 1 V
RMS
, f = 100 kHz
V
S
= 0 V, f = 100 kHz
V
S
= V
D
= 0 V, f = 1 MHz
Room
Room
Room
Room
Room
Room
Room
Room
1
- 90
- 95
5
5
16
pF
300
200
ns
pC
dB
V
INL
V
INH
I
INL
I
INH
V
IN
under test = 0.8 V
All Other = 2.4 V
V
IN
under test = 2.4 V
All Other = 0.8 V
Full
Full
Full
Full
2.4
-1
-1
- 0.01
0.01
1
µA
1
0.8
V
I
D(on)
V
S
= V
D
= ± 14 V
Symbol
V
ANALOG
R
DS(on)
I
S(off)
V
D
= ± 14 V, V
S
= ± 14 V
I
S
= 1 mA, V
D
= ± 10 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
e
Temp.
a
Full
Room
Full
Room
Full
Room
Full
Room
Full
Limits
- 40 °C to 85 °C
Min.
b
- 15
45
- 0.5
-5
- 0.5
-5
- 0.5
- 10
± 0.01
± 0.01
± 0.02
Typ.
c
Max.
b
15
80
95
0.5
5
0.5
5
0.5
10
Unit
V
nA
Document Number: 72626
S13-1287-Rev. C, 27-May-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG444B, DG445B
Vishay Siliconix
SPECIFICATIONS
(for unipolar supplies)
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
Parameter
Analog Switch
Analog Signal Range
d
Drain-Source
On-Resistance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
I+
V
IN
= 0 or 5 V
I-
I
IN
V
L
= 5.25 V, V
IN
= 0 or 5 V
Room
Full
Room
Full
Room
Full
1
5
-1
-5
1
5
µA
d
D Suffix
- 40 °C to 85 °C
Temp.
a
Full
Min.
b
0
90
Typ.
c
Max.
b
12
160
200
300
200
Unit
V
Symbol
V
ANALOG
R
DS(on)
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
e
I
S
= 1 mA, V
D
= 3 V, 8 V
Room
Full
Room
Room
Room
t
ON
t
OFF
Q
R
L
= 1 k, C
L
= 35 pF, V
S
= 8 V
See Figure 2
C
L
= 1 nF, V
gen
= 6 V, R
gen
= 0
120
60
4
ns
pC
Notes:
a. Room = 25 °C, Full = as determined by the operating temperature suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. Guaranteed by design, not subject to production test.
e. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
110
100
RDS(on) - Drain-Source On-Resistance (Ω)
90
80
70
60
50
40
30
20
10
0
-8 -4
0
4
8
V
D
– Drain Voltage (V)
12
16
20
- 15
- 10
-5
0
5
10
15
V
D
– Drain Voltage (V)
125 °C
85 °C
25 °C
- 55 °C
V+ = 15 V
V- = - 15 V
RDS(on) – Drain-Source On-Resistance (Ω)
100
90
±5V
80
70
60
50
40
30
20
10
- 20 - 16 - 12
± 20 V
± 10 V
± 15 V
R
DS(on)
vs. V
D
and Power Supply Voltages
R
DS(on)
vs. V
D
and Temperature
www.vishay.com
4
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 72626
S13-1287-Rev. C, 27-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG444B, DG445B
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
250
R
DS(on) – Drain-Source On-Resistance (Ω)
225
200
20
I
S
, I
D
- Current (pA)
175
150
125
10 V
100
75
50
25
0
0
2
4
6
8
10
12
V
D
– Drain Voltage (V)
14
16
- 30
- 40
- 20
12 V
15 V
7V
10
0
- 10
- 20
I
S(off)
, I
D(off)
I
D(on)
V+ = 5 V
40
30
V+ = 22 V
V- = - 22 V
T
A
= 25 °C
- 15
- 10 - 5
0
5
10
V
ANALOG
– Analog Voltage (V)
15
20
R
DS(on)
vs. V
D
and Single Power Supply Voltages
1 nA
V+ = 15 V
V- = - 15 V
V
S,
V
D
= - 14 V
30
Leakage Currents vs. Analog Voltage
20
Q – Charge (pC)
I
S
, I
D
- Current
100 pA
10
V+ = 15 V
V- = - 15 V
V+ = 12 V
V- = 0 V
- 10
0
I
S(off)
, I
D(off)
10 pA
- 20
1 pA
- 55
- 35
- 15
5
25
45
65
Temperature (°C)
85
105 125
- 30
- 15
- 10
-5
0
5
V
ANALOG
– Analog Voltage (V)
10
15
Leakage Current vs. Temperature
120
110
100
90
Q
S
, Q
D
- Charge Injection vs. Analog Voltage
V+ = + 15 V
V- = - 15 V
OIRR (dB)
R
L
= 50
Ω
80
70
60
50
40
10 k
100 k
1M
10 M
f – Frequency (Hz)
Off Isolation vs. Frequency
Document Number: 72626
S13-1287-Rev. C, 27-May-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
京公网安备 11010802033920号
EEWORLD
