HiPerFET
TM
Power
MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrisic Diode
IXFK24N100
IXFX24N100
V
DSS
I
D25
R
DS(on)
t
rr
=
=
≤
≤
1000V
24A
390mΩ
Ω
250ns
TO-264 (IXFK)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dV/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting force
Mounting torque
PLUS247
TO-264
(PLUS247)
(TO-264)
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150°C
T
C
= 25°C
Maximum Ratings
1000
1000
±20
±30
24
96
24
3
5
560
-55 ... +150
150
-55 ... +150
300
260
20..120/4.5..27
1.13/10
6
10
V
V
V
V
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
N/lb.
Nm/lb.in.
g
g
G = Gate
S = Source
D
= Drain
TAB = Drain
(TAB)
G
D
(TAB)
S
PLUS247 (IXFX)
Features
•
•
•
•
•
•
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Avalanche rated
Low package inductance
Fast intrinsic rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor drives
• Temperature and lighting controls
Advantages
• PLUS 247
TM
package for clip or spring
mounting
• Space savings
• High power density
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±20V,
V
DS
= 0V
V
DS
= V
DSS
V
GS
= 0V
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
T
J
= 125°C
Characteristic Values
Min. Typ. Max.
1000
3.0
5.5
V
V
±200
nA
100
μA
2 mA
390 mΩ
© 2008 IXYS CORPORATION, All rights reserved
DS98598D(10/08)
IXFK24N100
IXFX24N100
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
0.15
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1Ω (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ. Max.
15
27
8700
785
315
35
35
75
21
267
52
142
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.22
°C/W
°C/W
TO-264 (IXFK) Outline
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, pulse width limited by T
JM
I
F
= 24A, V
GS
= 0V, Note 1
I
F
= 24A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
1.0
8 .0
Characteristic Values
Min. Typ.
Max.
24
96
1.5
A
A
V
PLUS 247
TM
(IXFX) Outline
250 ns
μC
A
Note 1: Pulse test, t
≤
300μs; duty cycle, d
≤
2%.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
Q
R
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFK24N100
IXFX24N100
Fig. 1. Output Characteristics
@ 25ºC
24
V
GS
= 10V
7V
20
55
50
45
40
7V
V
GS
= 10V
Fig. 2. Extended Output Characteristics
@ 25ºC
I
D
- Amperes
I
D
- Amperes
16
6V
35
30
25
20
15
6V
12
8
4
5V
0
0
1
2
3
4
5
6
7
8
9
10
5
0
0
3
6
9
12
15
18
21
24
27
30
5V
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics
@ 125ºC
24
V
GS
= 10V
20
2.8
2.6
2.4
Fig. 4. R
DS(on)
Normalized to I
D
= 12A Value
vs. Junction Temperature
V
GS
= 10V
I
D
- Amperes
16
R
DS(on)
- Normalized
6V
2.2
2.0
1.8
1.6
1.4
1.2
1.0
I
D
= 12A
I
D
= 24A
12
8
4
5V
0.8
0.6
0
0
2
4
6
8
10
12
14
16
18
20
0.4
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 12A Value
vs. Drain Current
2.6
2.4
V
GS
= 10V
T
J
= 125ºC
28
24
20
Fig. 6. Maximum Drain Current vs.
Case Temperature
R
DS(on)
- Normalized
2.2
I
D
- Amperes
T
J
= 25ºC
0
5
10
15
20
25
30
35
40
45
50
55
2.0
1.8
1.6
1.4
16
12
8
1.2
1.0
0.8
4
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
IXFK24N100
IXFX24N100
Fig. 7. Input Admittance
45
40
50
35
T
J
= 125ºC
25ºC
- 40ºC
25ºC
60
T
J
= - 40ºC
Fig. 8. Transconductance
g
f s
- Siemens
I
D
- Amperes
30
25
20
15
10
40
30
125ºC
20
10
5
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
0
0
5
10
15
20
25
30
35
40
45
50
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
70
60
8
50
7
10
9
V
DS
= 500V
I
D
= 12A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
V
GS
- Volts
T
J
= 25ºC
40
T
J
= 125ºC
30
20
10
6
5
4
3
2
1
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
0
30
60
90
120
150
180
210
240
270
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
100,000
1.000
Fig. 12. Maximum Transient Thermal
Impedance
f
= 1MHz
Capacitance - PicoFarads
Ciss
Coss
1,000
Crss
100
0
5
10
15
20
25
30
35
40
0.010
0.001
Z
(th)JC
- ºC / W
10,000
0.100
0.01
0.1
1
10
V
DS
- Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_24N100(9X)10-17-08-C
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