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FDMS86102LZ N-Channel Shielded Gate PowerTrench
®
MOSFET
October 2014
FDMS86102LZ
N-Channel
Shielded Gate
PowerTrench
®
MOSFET
100 V, 22 A, 25 mΩ
Features
Shielded Gate MOSFET Technology
Max r
DS(on)
= 25 mΩ at V
GS
= 10 V, I
D
= 7 A
Max r
DS(on)
= 37 mΩ at V
GS
= 4.5 V, I
D
= 5.8 A
HBM ESD protection level > 6 KV typical (Note 4)
100% UIL Tested
RoHS Compliant
General Description
This N-Channel logic Level MOSFETs are produced using
Fairchild Semiconductor‘s advanced PowerTrench
®
process
that incorporates Shielded Gate technology. This process has
been optimized for the on-state resistance and yet maintain
superior switching performance. G-S zener has been added to
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1 Introduction
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Automatic Test
System The ATS (Automatic Test System) integrates all the stimulus and measurement equipment required for testing.
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efficiently comp...[Details]
Microcontroller MCU
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