EEWORLDEEWORLDEEWORLD

Part Number

Search

FQB15P12TM

Description
MOSFET 120V P-Channel QFET
CategoryDiscrete semiconductor    The transistor   
File Size49KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
Download Datasheet Parametric View All

FQB15P12TM Online Shopping

Suppliers Part Number Price MOQ In stock  
FQB15P12TM - - View Buy Now

FQB15P12TM Overview

MOSFET 120V P-Channel QFET

FQB15P12TM Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
package instructionD2PAK-3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)1157 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage120 V
Maximum drain current (ID)15 A
Maximum drain-source on-resistance0.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)60 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
FFPF20U60S
FFPF20U60S
Features
• High voltage and high reliability
• High speed switching
• Low forward voltage
Applications
General purpose
Switching mode power supply
Free-wheeling diode for motor application
Power switching circuits
TO-220F
1
2
1. Cathode
2. Anode
ULTRA FAST RECOVERY POWER RECTIFIER
Absolute Maximum Ratings
Symbol
V
RRM
I
F(AV)
I
FSM
T
J,
T
STG
T
C
=25°C unless otherwise noted
°
Value
600
@ T
C
= 100°C
20
120
- 65 to +150
Units
V
A
A
°C
Parameter
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature
Thermal Characteristics
Symbol
R
θJC
Parameter
Maximum Thermal Resistance, Junction to Case
T
C
=25
°
C unless otherwise noted
Min.
Typ.
Max.
Units
V
Value
1.25
Units
°C/W
Electrical Characteristics
Symbol
V
FM
*
Parameter
Maximum Instantaneous Forward Voltage
I
F
= 20A
I
F
= 20A
T
C
= 25
°C
T
C
= 100
°C
T
C
= 25
°C
T
C
= 100
°C
2.2
2.0
µA
10
100
90
8
360
1.0
ns
A
nC
mJ
I
RM
*
Maximum Instantaneous Reverse Current
@ rated V
R
Maximum Reverse Recovery Time
Maximum Reverse Recovery Current
Maximum Reverse Recovery Charge
(I
F
=20A, di/dt = 200A/µs)
t
rr
I
rr
Q
rr
W
AVL
Avalanche Energy
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
©2000 Fairchild Semiconductor International
Rev. F, September 2000

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1419  1847  2002  1705  2305  29  38  41  35  47 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号