ZTX553STZ datasheet, PDF - EEWORLD Datasheet

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ZTX553STZ: DescriptionBipolar Transistors - BJT PNP Medium Power; Categorysemiconductor Discrete semiconductor; File Size72KB，2 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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ZTX553STZ Overview

Bipolar Transistors - BJT PNP Medium Power

ZTX553STZ Parametric

Parameter Name	Attribute value
Product Category	Bipolar Transistors - BJT
Manufacturer	Diodes
RoHS	Details
Mounting Style	Through Hole
Package / Case	TO-92-3
Transistor Polarity	PNP
Configuration	Single
Collector- Emitter Voltage VCEO Max	- 100 V
Collector- Base Voltage VCBO	- 120 V
Emitter- Base Voltage VEBO	- 5 V
Collector-Emitter Saturation Voltage	- 0.3 V
Maximum DC Collector Current	1 A
Gain Bandwidth Product fT	150 MHz
Maximum Operating Temperature	+ 150 C
Continuous Collector Current	- 1 A
Height	4.01 mm
Length	4.77 mm
Minimum Operating Temperature	- 55 C
Packaging	Bulk
Pd - Power Dissipation	1 W
Factory Pack Quantity	2000
Width	2.41 mm
Unit Weight	0.016000 oz

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PNP SILICON PLANAR

MEDIUM POWER TRANSISTORS

ISSUE 1 MARCH 94

FEATURES

* 100 Volt V

CEO

* 1 Amp continuous current

* P

tot

=1 Watt

ZTX552

ZTX553

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation: at T

amb

=25°C

derate above 25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j:

T

stg

ZTX552

-100

-80

-5

-2

-1

1

5.7

E-Line

TO92 Compatible

ZTX553

-120

-100

UNIT

V

A

W

mW/ °C

°C

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Sustaining Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn-onn Voltage

SYMBOL

V

(BR)CBO

V

CEO(sus)

V

(BR)EBO

I

CBO

ZTX552

MIN.

-100

-80

-5

-0.1

-0.25

-1.1

-1.0

40

10

150

12

3-196

150

40

10

150

12

MAX.

ZTX553

MIN.

-120

-100

-5

-0.1

-0.25

-1.1

-1.0

200

MHz

MAX.

V

µ

A

µ

A

UNIT

CONDITIONS.

I

C

=-100

µ

A

I

C

=-10mA

I

E

=-100

µ

A

V

CB

=-80V

V

CB

=-100V

V

EB

=-4V

I

C

=-150mA, I

B

=-15mA*

I

C

=-150mA, I

B

=-15mA*

I

C

=-150mA, V

CE

=-10V*

I

C

=-150mA, V

CE

=-10V*

I

C

=-1A, V

CE

=-10V*

I

C

=-50mA, V

CE

=-10V

f=100MHz

V

CB

=-10V, f=1MHz

Emitter Cut-Off Current I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

V

Static Forward Current h

FE

Transfer Ratio

Transition Frequency

Output Capacitance

f

T

C

obo

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

ZTX553STZ Related Products

	ZTX553STZ	ZTX553
Description	Bipolar Transistors - BJT PNP Medium Power	Thin Film Resistors - SMD 1/8W 20K Ohms 0.05% 0805 10ppm
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT
Manufacturer	Diodes	Diodes
RoHS	Details	Details
Mounting Style	Through Hole	Through Hole
Package / Case	TO-92-3	TO-92-3
Transistor Polarity	PNP	PNP
Configuration	Single	Single
Collector- Emitter Voltage VCEO Max	- 100 V	- 100 V
Collector- Base Voltage VCBO	- 120 V	- 120 V
Emitter- Base Voltage VEBO	- 5 V	- 5 V
Collector-Emitter Saturation Voltage	- 0.3 V	- 0.3 V
Maximum DC Collector Current	1 A	1 A
Gain Bandwidth Product fT	150 MHz	150 MHz
Maximum Operating Temperature	+ 150 C	+ 150 C
Continuous Collector Current	- 1 A	- 1 A
Height	4.01 mm	4.01 mm
Length	4.77 mm	4.77 mm
Minimum Operating Temperature	- 55 C	- 55 C
Packaging	Bulk	Bulk
Pd - Power Dissipation	1 W	1 W
Factory Pack Quantity	2000	4000
Width	2.41 mm	2.41 mm
Unit Weight	0.016000 oz	0.016000 oz

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