BSC0921NDI
Dual N-Channel OptiMOS™ MOSFET
Features
• Dual N-channel OptiMOS™ MOSFET
• Optimized for high performance Buck converter
•
Logic level (4.5V rated)
• N-channel
1)
Product Summary
Q1
V
DS
R
DS(on),max
V
GS
=10 V
V
GS
=4.5 V
I
D
30
5
7
40
Q2
30
1.6
2.1
40
A
V
mW
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
VPhase
Type
BSC0921NDI
Package
PG-TISON-8
Marking
0921NDI
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
2)
Parameter
Continuous drain current
Symbol Conditions
Q1
I
D
T
C
=70 °C, V
GS
=10V
T
A
=25 °C, V
GS
=4.5V
3)
T
A
=70 °C, V
GS
=4.5V
3)
T
A
=25 °C,
V
GS
=10V
4)
Pulsed drain current
5)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
I
D,pulse
E
AS
V
GS
P
tot
T
A
=25 °C
2)
T
A
=25 °C, minimum
footprint
3)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
2)
Value
Q2
40
31
25
19
160
60
±20
2.5
1.0
-55 ... 150
55/150/56
2.5
1.0
40
17
14
11
160
12
Unit
A
T
C
=70 °C
Q1:
I
D
=20 A,
Q2:
I
D
=20 A,
R
GS
=25
W
mJ
V
W
T
j
,
T
stg
°C
J-STD20 and JESD22
One transistor active
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB
is vertical in still air.
4)
Device mounted on a minimum pad (one layer, 70 µm thick). One transistor active
3)
5)
See figure 3 for more detailed information.
Rev.2.0
page 1
2013-07-30
BSC0921NDI
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance, junction -
case
Thermal resistance, junction -
ambient
1)
Q1
R
thJC
Q2
Q1
R
thJA
Q2
Q1
Q2
minimal footprint,
steady state
3)
-
-
125
6 cm
2
cooling area
2)
-
-
-
-
-
-
4.5
1.7
50
K/W
Values
typ.
max.
Unit
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Q1
Q2
Breakdown voltage temperature
coefficient
Gate threshold voltage
Q1 dV
(BR)DSS
I
D
=10 mA, referenced
to 25 °C
Q2 /dT
j
Q1
V
GS(th)
Q2
Zero gate voltage drain current
Q1
I
DSS
Q2
Q1
Q2
Gate-source leakage current
Q1
I
GSS
Q2
Drain-source on-state
resistance
Q1
R
DS(on)
Q2
Q1
V
GS
=10 V,
I
D
=20 A
Q2
Gate resistance
Q1
R
G
Q2
Transconductance
Q1
g
fs
Q2
Rev.2.0
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=20 A
-
0.4
0.3
38
70
1.2
0.7
0.5
75
140
1.6
1.4
1.0
-
-
2013-07-30
S
W
-
V
GS
=4.5 V,
I
D
=20 A
-
-
1.7
3.9
2.1
5.0
5.8
7.0
mW
V
DS
=24 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=24 V,
V
GS
=0 V,
T
j
=150 °C
-
-
-
-
-
-
-
-
3
-
1
500
0.1
-
100
nA
mA
µA
V
DS
=V
GS
,
I
D
=250 µA
1.2
-
2
V
-
15
-
mV/K
V
(BR)DSS
V
GS
=0 V,
I
D
=10 mA
30
-
-
V
V
GS
=20 V,
V
DS
=0 V
page 2
BSC0921NDI
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Dynamic characteristics
Input capacitance
Q1
C
iss
Q2
Output capacitance
Q1
C
oss
Q2
Reverse transfer capacitance
Q1 C
rss
Q2
Turn-on delay time
Q1
t
d(on)
Q2
Rise time
Q1
t
r
Q2
Turn-off delay time
Q1
t
d(off)
Q2
Fall time
Q1
t
f
Q2
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Output charge
Q1
Q
gs
Q
gd
Q
g
V
plateau
Q2
Q
gs
Q
gd
Q
g
V
plateau
Q1
Q
oss
Q2
V
DD
=15 V,
V
GS
=0 V
-
30
40
-
-
V
DD
=15 V,
I
D
=20 A,
V
GS
=0 to 4.5 V
-
-
-
-
-
-
2.2
1.9
5.9
2.8
6.7
7.0
22
2.5
8
2.9
2.5
8.9
-
8.9
9.1
33
-
11
V
nC
V
nC
nC
V
DD
=15 V,
V
GS
=10 V,
R
G
=1.6
W,
I
D
=20 A
V
GS
=0 V,
V
DS
= 15 V,
f
=1 MHz
-
-
-
-
-
-
-
-
-
-
-
-
-
-
770
2700
300
1100
44
150
1.8
5
3.4
5.0
12
25
2.4
3.6
-
-
-
-
-
-
-
1025
3590
399
1463
-
-
ns
pF
Rev.2.0
page 3
2013-07-30
BSC0921NDI
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Reverse Diode
Diode continuous forward current Q1
I
S
Q2
T
C
=25 °C
Diode pulse current
Q1
I
S,pulse
Q2
Diode forward voltage
Q1
V
SD
V
GS
=0 V,
I
F
=20 A,
T
j
=25 °C
V
GS
=0 V,
I
F
=8 A,
T
j
=25 °C
V
R
=15 V,
I
F
=I
S
,
di
F
/dt =100 A/µs
-
-
-
-
-
0.9
160
160
1
V
-
-
28
40
A
Q2
Reverse recovery charge
Q1
Q
rr
Q2
2)
-
-
-
0.56
5
5
0.7
-
-
nC
nC
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
device mounted on a minimum pad (one layer, 70 µm thick)
Rev.2.0
page 4
2013-07-30
BSC0921NDI
1 Power dissipation (Q1)
P
tot
=f(T
A
)
3)
2 Power dissipation (Q2)
P
tot
=f(T
A
)
3)
1.2
1.2
1
1
0.8
0.8
P
tot
[W]
P
tot
[W]
0.6
0.6
0.4
0.4
0.2
0.2
0
0
40
80
120
160
0
0
40
80
120
160
T
A
[°C]
T
A
[°C]
3 Drain current (Q1)
I
D
=f(T
C
)
parameter:
V
GS
≥10 V
50
4 Drain current (Q2)
I
D
=f(T
C
)
parameter:
V
GS
≥10 V
50
40
40
30
30
I
D
[A]
20
I
D
[A]
20
10
10
0
0
40
80
120
160
0
0
40
80
120
160
T
C
[°C]
T
C
[°C]
Rev.2.0
page 5
2013-07-30
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