GF1A, GF1B, GF1D, GF1G, GF1J, GF1K, GF1M
www.vishay.com
Vishay General Semiconductor
Surface Mount Glass Passivated Rectifier
FEATURES
• Superectifier structure for high reliability condition
• Ideal for automated placement
SUPERECTIFIER
®
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
250 °C
DO-214BA (GF1)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
automotive and telecommunication.
1.0 A
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
30 A
1.1 V, 1.2 V
5.0 μA
175 °C
DO-214BA (GF1)
Single die
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
I
R
T
J
max.
Package
Diode variations
MECHANICAL DATA
Case:
DO-214BA, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Max. repetitive peak reverse voltage
Max. RMS voltage
Max. DC blocking voltage
Max. average forward rectified current at T
L
= 125 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
SYMBOL
GF1A
GA
50
35
50
GF1B
GB
100
70
100
GF1D
GD
200
140
200
GF1G
GG
400
280
400
1.0
30
- 65 to + 175
GF1J
GJ
600
420
600
GF1K
GK
800
560
800
GF1M
GM
1000
700
1000
V
V
V
A
A
°C
UNIT
Revision: 11-Dec-13
Document Number: 88617
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
GF1A, GF1B, GF1D, GF1G, GF1J, GF1K, GF1M
www.vishay.com
Vishay General Semiconductor
SYMBOL
V
F
T
A
= 25 °C
T
A
= 125 °C
I
R
t
rr
C
J
GF1A
GF1B
GF1D
1.1
5.0
50
2.0
15
GF1G
GF1J
GF1K
GF1M
UNIT
V
μA
μs
pF
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Max. instantaneous forward
voltage
Max. DC reverse current at
rated DC blocking voltage
Typical reverse recovery time
Typical junction capacitance
TEST CONDITIONS
1.0 A
1.2
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
4.0 V, 1 MHz
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
(1)
SYMBOL
R
JA
R
JL
GF1A
GF1B
GF1D
GF1G
80
26
GF1J
GF1K
GF1M
UNIT
°C/W
Note
(1)
Thermal resistance from junction to ambient and from junction to lead, PCB mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
ORDERING INFORMATION
(Example)
PREFERRED P/N
GF1J-E3/67A
GF1J-E3/5CA
GF1JHE3/67A
(1)
UNIT WEIGHT (g)
0.104
0.104
0.104
0.104
PREFERRED PACKAGE CODE
67A
5CA
67A
5CA
BASE QUANTITY
1500
6500
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
GF1JHE3/5CA
(1)
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
1.25
1000
60 Hz Resistive or Inductive Load
Average Forward Rectified Current (A)
1.00
0.75
Peak Forward Surge Current (A)
Sine waveform,
T
A
= 25 °C
100
0.50
0.25
P.C.B. Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
110
120
130
140
150
160
170
180
0
100
10
0.1
1
10
Lead Temperature (°C)
t
p
, Pulse Width (ms)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Non-Repetitive Peak Forward Surge Current
Revision: 11-Dec-13
Document Number: 88617
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
GF1A, GF1B, GF1D, GF1G, GF1J, GF1K, GF1M
www.vishay.com
Vishay General Semiconductor
30
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
10
Instantaneous Forward Current (A)
1
Junction Capacitance (pF)
10
0.1
Pulse Width = 300 µs
1 % Duty Cycle
T
J
= 25 °C
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
10
100
1
T
J
= 100 °C
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Leakage
Current (µA)
10
0.1
1
Mounted on
0.2" x 0.27" (5.0 mm x 7.0 mm)
Copper Pad Areas
0.1
0.01
0.1
1
10
100
T
J
= 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214BA (GF1)
Cathode Band
Mounting Pad Layout
0.066 (1.68)
MIN.
0.076 (1.93)
MAX.
0.066 (1.68)
0.040 (1.02)
0.187 (4.75)
0.167 (4.24)
0.015 (0.38)
0.0065 (0.17)
0.060 (1.52)
MIN.
0.118 (3.00)
0.100 (2.54)
0.108 (2.74)
0.098 (2.49)
0.220 (5.58)
REF.
0.060 (1.52)
0.030 (0.76)
0.006 (0.152) TYP.
0.226 (5.74)
0.196 (4.98)
0.114 (2.90)
0.094 (2.39)
Revision: 11-Dec-13
Document Number: 88617
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000