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FDD6530A

Description
21 A, 20 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
CategoryDiscrete semiconductor    The transistor   
File Size73KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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FDD6530A Overview

21 A, 20 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252

FDD6530A Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeDPAK
package instructionDPAK-3
Contacts3
Manufacturer packaging codeTO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Reach Compliance Code_compli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)55 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)21 A
Maximum drain current (ID)21 A
Maximum drain-source on-resistance0.032 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1.6 W
Maximum pulsed drain current (IDM)100 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
FDD6530A
July 2001
FDD6530A
20V N-Channel PowerTrench
®
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS( ON)
and fast switching speed.
Features
21 A, 20 V
R
DS(ON)
= 32 mΩ @ V
GS
= 4.5 V
R
DS(ON)
= 47 mΩ @ V
GS
= 2.5 V
Low gate charge (6.5 nC typical)
Fast switching
Applications
DC/DC converter
Motor drives
High performance trench technology for extremely
low R
DS(ON)
.
D
D
G
S
TO-252
S
G
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Power Dissipation
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
20
±8
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
Units
V
V
A
W
21
100
33
3.3
1.6
–55 to +175
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
4.5
45
96
°C/W
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDD6530A
Device
FDD6530A
Reel Size
13’’
Tape width
16mm
Quantity
2500 units
©2001
Fairchild Semiconductor Corporation
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