Datasheet
Serial EEPROM Series Standard EEPROM
Microwire BUS EEPROM(3-Wire)
BR93Lxx-W
●General
Description
BR93Lxx-W is serial EEPROM of serial 3-line interface method
●Features
3-line communications of chip select, serial clock, serial data
input / output (the case where input and output are shared)
Actions available at high speed 2MHz clock(2.5V to 5.5V)
Speed write available (write time 5ms max.）
Same package and pin layout from 1Kbit to 16Kbit
1.8V to 5.5V single power source action
Address auto increment function at read action
Write mistake prevention function
Write prohibition at power on
Write prohibition by command code
Write mistake prevention function at low voltage
Program cycle auto delete and auto end function
Program condition display by READY / BUSY
Low current consumption
At write action (at 5V) : 1.2mA (Typ.)
At read action (at 5V) : 0.3mA (Typ.)
At standby action (at 5V) : 0.1μA (Typ.)(CMOS input)
TTL compatible( input / outputs)
Data retention for 40 years
Endurance up to 1,000,000 times
Data at shipment all addresses FFFFh
●Packages
W(Typ.) x D(Typ.) x H(Max.)
SOP8
5.00mm x 6.20mm x 1.71mm
TSSOP-B8
3.00mm x 6.40mm x 1.20mm
SOP- J8
4.90mm x 6.00mm x 1.65mm
TSSOP-B8J
3.00mm x 4.90mm x 1.10mm
SSOP-B8
3.00mm x 6.40mm x 1.35mm
MSOP8
2.90mm x 4.00mm x 0.90mm
DIP-T8
9.30mm x 6.50mm x 7.10mm
●BR93Lxx-W
Package type
Capacity
1Kbit
2Kbit
4Kbit
8Kbit
16Kbit
Bit format
64×16
128×16
256×16
512×16
1K×16
Type
BR93L46-W
BR93L56-W
BR93L66-W
BR93L76-W
BR93L86-W
Power source
voltage
1.8V to 5.5V
1.8V to 5.5V
1.8V to 5.5V
1.8V to 5.5V
1.8V to 5.5V
SOP8
F
●
●
●
●
●
RF
●
●
●
●
●
Figure.1
SOP-J8 SSOP-B8 TSSOP-B8
FJ RFJ FV RFV FVT RFVT
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●
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●
●
●
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●
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●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
MSOP8
RFVM
●
●
●
●
●
TSSOP-
B8J
RFVJ
●
●
●
●
●
DIP-T8
-
●
●
●
●
●
○Product
structure：Silicon monolithic integrated circuit
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©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½14½001
○This
product is not designed protection against radioactive rays
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TSZ02201-0R2R0G100390-1-2
15.Oct.2013 Rev.002
BR93Lxx-W
●Absolute
Maximum Ratings
(Ta=25℃)
Parameter
Symbol
Impressed voltage
V
CC
Datasheet
Permissible dissipation
Pd
Storage temperature range
Action temperature range
Terminal voltage
Tstg
Topr
‐
Limits
-0.3 to +6.5
450 (SOP8)
450 (SOP-J8)
300 (SSOP-B8)
330 (TSSOP-B8)
310 (MSOP8)
310 (TSSOP-B8J)
800(DIP-T8)
-65 to +125
-40 to +85
-0.3 to V
CC
+0.3
Unit
V
Remarks
When using at Ta=25℃ or higher, 4.5mW, to be reduced per 1℃.
When using at Ta=25℃ or higher, 4.5mW, to be reduced per 1℃.
When using at Ta=25℃ or higher, 3.0mW, to be reduced per 1℃.
mW
When using at Ta=25℃ or higher, 3.3mW, to be reduced per 1℃.
When using at Ta=25℃ or higher, 3.1mW, to be reduced per 1℃.
When using at Ta=25℃ or higher, 3.1mW, to be reduced per 1℃.
When using at Ta=25℃ or higher, 8.0mW, to be reduced per 1℃
℃
℃
V
●Memory
Cell Characteristics(V
CC
=1.8V to 5.5V)
Parameter
Endurance
*1
Data retention
*1
○Shipment
data all address FFFFh
*1：Not 100％ TESTED
Min.
1,000,000
40
Limit
Typ.
-
-
Max.
-
-
Unit
Times
Years
Condition
Ta=25℃
Ta=25℃
●Recommended
Operating Ratings
Parameter
Power source voltage
Input voltage
Symbol
V
CC
V
IN
Limits
1.8 to 5.5
0 to V
CC
Unit
V
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©2012 ROHM Co., Ltd. All rights reserved.
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BR93Lxx-W
●Electrical
Characteristics
(Unless otherwise specified, V
CC
=2.5V to 5.5V, Ta=-40℃ to +85℃)
Limits
Parameter
Symbol
Min.
Typ.
Max.
“L” input voltage 1
V
IL1
-0.3
-
0.8
“L” input voltage 2
V
IL2
-0.3
-
0.2 x V
CC
“H” input voltage 1
V
IH1
2.0
-
V
CC
+0.3
“H” input voltage 2
V
IH2
0.7 x V
CC
-
V
CC
+0.3
“L” output voltage 1
V
OL1
0
-
0.4
“L” output voltage 2
V
OL2
0
-
0.2
“H” output voltage 1
V
OH1
2.4
-
V
CC
“H” output voltage 2
V
OH2
V
CC
-0.2
-
V
CC
Input leak current
I
LI
-1
-
1
Output leak current
I
LO
-1
-
1
I
CC1
-
-
3.0
Current consumption
I
CC2
-
-
1.5
at action
I
CC3
-
-
4.5
Standby current
I
SB
-
-
2
(Unless otherwise specified, V
CC
=1.8V to 2.5V, Ta=-40℃ to +85℃)
Limits
Parameter
Symbol
Min.
Typ.
Max.
“L” input voltage
V
IL
-0.3
-
0.2 x V
CC
“H” input voltage
V
IH
0.7 x V
CC
-
V
CC
+0.3
“L” output voltage
V
OL
0
-
0.2
“H” output voltage
V
OH
V
CC
-0.2
-
V
CC
Input leak current
I
LI
-1
-
1
Output leak current
I
LO
-1
-
1
-
-
1.5
I
CC1
Current consumption
I
CC2
-
-
0.5
at action
I
CC3
-
-
2
Standby current
I
SB
-
-
2
Datasheet
Unit
V
V
V
V
V
V
V
V
µA
µA
mA
mA
mA
µA
Condition
4.0V≦V
CC
≦5.5V
V
CC
≦4.0V
4.0V≦V
CC
≦5.5V
V
CC
≦4.0V
I
OL
=2.1mA, 4.0V≦V
CC
≦5.5V
I
OL
=100μA
I
OH
=-0.4mA, 4.0V≦V
CC
≦5.5V
I
OH
=-100μA
V
IN
=0V to V
CC
V
OUT
=0V to V
CC
, CS=0V
f
SK
=2MHz, t
E/W
=5ms (WRITE)
f
SK
=2MHz (READ)
f
SK
=2MHz, t
E/W
=5ms (WRAL, ERAL)
CS=0V, DO=OPEN
Unit
V
V
V
V
μA
μA
mA
mA
mA
μA
Condition
I
OL
=100μA
I
OH
=-100μA
V
IN
=0V to V
CC
V
OUT
=0V to V
CC
, CS=0V
f
SK
=500kHz, t
E/W
=5ms (WRITE)
f
SK
=500kHz (READ)
f
SK
=500kHz, t
E/W
=5ms (WRAL, ERAL)
CS=0V, DO=OPEN
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©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½15½001
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TSZ02201-0R2R0G100390-1-2
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BR93Lxx-W
●Action
Timing Characteristics
(Ta=-40℃ to +85℃, V
CC
=2.5V to 5.5V)
Parameter
SK frequency
SK “H” time
SK “L” time
CS “L” time
CS setup time
DI setup time
CS hold time
DI hold time
Data “1” output delay time
Data “0” output delay time
Time from CS to output establishment
Time from CS to High-Z
Write cycle time
(Ta=-40℃ to +85℃, V
CC
=1.8V to 2.5V)
Parameter
SK frequency
SK “H” time
SK “L” time
CS “L” time
CS setup time
DI setup time
CS hold time
DI hold time
Data “1” output delay time
Data “0” output delay time
Time from CS to output establishment
Time from CS to High-Z
Write cycle time
●Sync
Data Input / Output Timing
Symbol
f
SK
t
SKH
t
SKL
t
CS
t
CSS
t
DIS
t
CSH
t
DIH
t
PD1
t
PD0
t
SV
t
DF
t
E/W
Min.
-
0.8
0.8
1
200
100
0
100
-
-
-
-
-
1.8V≦V
CC
≦2.5V
Typ.
Max.
-
500
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.7
-
0.7
-
0.7
-
200
-
5
Unit
kHz
us
us
us
ns
ns
ns
ns
us
us
us
ns
ms
Symbol
f
SK
t
SKH
t
SKL
t
CS
t
CSS
t
DIS
t
CSH
t
DIH
t
PD1
t
PD0
t
SV
t
DF
t
E/W
Min.
-
230
230
200
50
100
0
100
-
-
-
-
-
2.5V≦V
CC
≦5.5V
Typ.
Max.
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
200
-
200
-
150
-
150
-
5
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
Datasheet
CS
tCSS
tSKH
tSKL
tCSH
SK
tDIS
tDIH
DI
t PD0
tPD1
DO(READ)
tDF
DO(WRITE)
STATUS VALID
○Data
is taken by DI sync with the rise of SK.
○At
read action, data is output from DO in sync with the rise of SK.
○The
status signal at write (READY / BUSY) is output after tCS from the fall of CS after write command input, at the area
DO where CS is “H”, and valid until the next command start bit is input. And, while CS is “L”, DO becomes High-Z.
○After
completion of each mode execution, set CS “L” once for internal circuit reset, and execute the following action mode.
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©2012 ROHM Co., Ltd. All rights reserved.
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TSZ02201-0R2R0G100390-1-2
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BR93Lxx-W
●Block
Diagram
Datasheet
CS
Command decode
Control
Power source voltage detection
SK
Clock generation
Write
prohibition
6bit
7bit
8bit
9bit
10bit
High voltage occurrence
DI
Command
register
Address
buffer
Address
decoder
6bit
7bit
8bit
9bit
10bit
Data
register
DO
Dummy bit
16bit
R/W
amplifier
16bit
1,024 bit
2,048 bit
4,096 bit
8,192 bit
16,384 bit
EEPROM
●Pin
Configurations
TOP VIEW
Vcc
NC
NC
GND
NC
TOP VIEW
GND
DO
DI
Vcc
TOP VIEW
NC
NC
GND
BR93LXXRF-W:SOP8
BR93LXXF-W:SOP8
BR93LXX-W:DIP-T8
BR93LXXFJ-W:SOP-J8
BR93LXXFV-W:SSOP-B8*
BR93LXXFVT-W:TSSOP-B8*
BR93LXXRFJ-W:SOP-J8
BR93LXXRFV-W:SSOP-B8
BR93LXXRFVT-W:TSSOP-B8
BR93LXXRFVM-W:MSOP8
BR93LXXRFVJ-W:TSSOP-B8J
CS
SK
DI
DO
NC
Vcc
CS
SK
CS
SK
DI
DO
*BR93L46/56/66-W
●Pin
Descriptions
Pin name
V
CC
GND
CS
SK
DI
DO
NC
I/O
-
-
Input
Input
Input
Output
-
Power source
Function
All input / output reference voltage, 0V
Chip select input
Serial clock input
Start bit, ope code, address, and serial data input
Serial data output, READY / BUSY internal condition display output
Non connected terminal, Vcc, GND or OPEN
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©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½15½001
5/35
TSZ02201-0R2R0G100390-1-2
15.Oct.2013 Rev.002
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