2N5884 datasheet, PDF - EEWORLD Datasheet

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2N5884: CategoryDiscrete semiconductor The transistor; File Size562KB，3 Pages; ManufacturerCentral Semiconductor

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2N5884 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	TO-204AA
package instruction	FLANGE MOUNT, O-MBFM-P2
Contacts	2
Reach Compliance Code	not_compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	25 A
Collector-based maximum capacity	500 pF
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	4
Maximum landing time (tf)	800 ns
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Minimum operating temperature	-65 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	200 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	4 MHz
Maximum off time (toff)	1800 ns
Maximum opening time (tons)	700 ns
VCEsat-Max	4 V
Base Number Matches	1

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2N5883 2N5884

2N5885 2N5886

PNP

NPN

w w w. c e n t r a l s e m i . c o m

COMPLEMENTARY SILICON

POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N5883, 2N5885

series types are complementary silicon epitaxial base

transistors designed for power amplifier and switching

applications.

MARKING: FULL PART NUMBER

TO-3 CASE

MAXIMUM RATINGS:

(TC=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

CContinuous Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

IC

ICM

IB

PD

TJ, Tstg



JC

2N5883

2N5885

60

2N5884

2N5886

80

UNITS

V

A

W

°C

°C/W

5.0

25

50

7.5

200

-65 to +200

0.875

ELECTRICAL CHARACTERISTICS:

(TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

VCB=Rated VCBO

ICEO

VCE=½Rated VCEO

ICEX

VCE=Rated VCEO, VBE=1.5V

ICEX

VCE=Rated VCEO, VBE=1.5V, TC=150°C

IEBO

VEB=5.0V

BVCEO

IC=200mA (2N5883, 2N5885)

60

BVCEO

IC=200mA (2N5884, 2N5886)

80

VCE(SAT) IC=15A, IB=1.5A

VCE(SAT) IC=25A, IB=6.25A

VBE(SAT) IC=25A, IB=6.25A

VBE(ON)

VCE=4.0V, IC=10A

hFE

VCE=4.0V, IC=3.0A

35

hFE

VCE=4.0V, IC=10A

20

hFE

VCE=4.0V, IC=25A

4.0

fT

VCE=10V, IC=1.0A, f=1.0MHz

4.0

Cob

VCB=10V, IE=0, f=1.0MHz (2N5883, 2N5885)

Cob

VCB=10V, IE=0, f=1.0MHz (2N5884, 2N5886)

hfe

VCE=4.0V, IC=3.0A, f=1.0kHz

20

tr

VCC=30V, IC=10A, IB1=IB2=1.0A

ts

VCC=30V, IC=10A, IB1=IB2=1.0A

tf

VCC=30V, IC=10A, IB1=IB2=1.0A

MAX

1.0

2.0

1.0

10

1.0

4.0

2.5

1.5

100

UNITS

mA

V

1000

500

0.7

1.0

0.8

MHz

pF

μs

R1 (4-December 2012)

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