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FDB44N25 — N-Channel UniFET
TM
MOSFET
November 2013
FDB44N25
Features
N-Channel UniFET
TM
MOSFET
250 V, 44 A, 69 mΩ
Description
UniFET
TM
MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche en-
ergy strength. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
• R
DS(on)
= 69 mΩ (Max.) @ V
GS
= 10 V, I
D
= 22 A
• Low Gate Charge (Typ. 47 nC)
• Low C
rss
(Typ. 60 pF)
• 100% Avalanche Tested
Applications
• PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
D
D
G
G
S
D
2
-PAK
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
T
C
= 25°C unless otherwise noted.
Parameter
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
(Note 1)
FDB44N25
250
44
26.4
176
±30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25°C)
- Derate Above 25°C
2055
44
30.7
4.5
307
2.45
-55 to +150
300
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient (1
in
2
Pad of 2-oz Copepr), Max.
Thermal Resistance, Junction-to-Ambien (Minimum Pad of 2-oz Copper), Max.
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Electronics Design Contest
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