DMN10H170SFG
N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
®
Product Summary
V
(BR)DSS
100V
R
DS(ON)
max
122mΩ @ V
GS
= 10V
133mΩ @ V
GS
= 4.5V
I
D
max
T
A
= +25°C
2.9A
2.7A
Features
100% Unclamped Inductive Switch (UIS) test in production
Low R
DS(ON)
– ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
POWERDI3333
S
Pin 1
S
S
G
Case: POWERDI3333
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.034 grams (approximate)
D
G
D
D
D
D
S
Equivalent Circuit
Top View
Bottom View
Ordering Information
(Note 4)
Part Number
DMN10H170SFG-7
DMN10H170SFG-13
Notes:
Compliance
Standard
Standard
Case
POWERDI3333
POWERDI3333
Packaging
2000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
YYWW
G17
G17 = Product marking code
YYWW = Date code marking
YY = Last digit of year (ex: 10 for 2010)
WW = Week code (01 – 53)
POWERDI is a registered trademark of Diodes Incorporated
DMN10H170SFG
Document number: DS36147 Rev. 4 - 2
1 of 6
www.diodes.com
August 2013
© Diodes Incorporated
DMN10H170SFG
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
t<10s
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 7)
Avalanche Energy (Note 7)
T
A
= +25°C
T
A
= +70°C
T
C
= +25°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
I
AR
E
AR
Value
100
±20
2.9
2.4
8.5
3.7
3.0
3.0
16
5.3
20
Units
V
V
A
A
A
A
A
mJ
Continuous Drain Current (Note 6) V
GS
= 10V
NEW PRODUCT
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T
A
= +25°C
T
A
= +70°C
Steady State
t<10s
T
A
= +25°C
T
A
= +70°C
Steady State
t<10s
Symbol
P
D
R
θJA
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
0.94
0.6
137
82
2.0
1.3
60
36
7.0
-55 to +150
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Min
100
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
99
104
4.4
0.7
870.7
40.8
24.6
1.1
7.0
14.9
3.3
3.0
4.4
2.3
13.9
3.4
22.4
19.7
Max
—
1.0
±100
3.0
122
133
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
μA
nA
V
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 100V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 3.3A
V
GS
= 4.5V, I
D
= 3.0A
V
DS
= 10V, I
D
= 3.3A
V
GS
= 0V, I
S
= 3.3A
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DS
= 50V, I
D
= 3.3A
V
DD
= 50V, V
GEN
= 10V,
R
GEN
= 6.0Ω, I
D
= 3.3A
I
S
= 3.3A, dI/dt = 100A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. UIS in production with L = 1.43mH, T
J
= +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated
DMN10H170SFG
Document number: DS36147 Rev. 4 - 2
2 of 6
www.diodes.com
August 2013
© Diodes Incorporated
DMN10H170SFG
10.0
9.0
8.0
I
D
, DRAIN CURRENT (A)
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
10
9
8
I
D
, DRAIN CURRENT (A)
7
6
5
4
3
2
1
0
1
T
A
= 25°C
T
A
= -55°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
V
DS
= 5.0V
NEW PRODUCT
2
3
4
V
GS
, GATE-SOURCE VOLTAGE
Figure 2 Typical Transfer Characteristics
5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.25
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0
1
6
7
3
4
5
I
D
, DRAIN CURRENT
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
2
8
T
A
= -55°C
T
A
= 25°C
T
A
= 85°C
V
GS
= 10V
0.2
T
A
= 150°C
T
A
= 125°C
0.15
0.1
V
GS
= 4.5V
V
GS
= 10V
0.05
0
0
1
2
3
4
5
6
7
I
D
, DRAIN-SOURCE CURRENT
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
8
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
2.5
V
GS
= 10V
I
D
= 10A
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
3
0.25
0.2
V
GS
= 5V
I
D
= 5A
2
0.15
V
GS
= 10V
I
D
= 10A
1.5
V
GS
= 5V
I
D
= 5A
0.1
1
0.5
0.05
0
50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 5 On-Resistance Variation with Temperature
0
- 50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
POWERDI is a registered trademark of Diodes Incorporated
DMN10H170SFG
Document number: DS36147 Rev. 4 - 2
3 of 6
www.diodes.com
August 2013
© Diodes Incorporated
DMN10H170SFG
4
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
10
9
3.5
I
S
, SOURCE CURRENT (V)
8
7
6
5
4
3
2
1
T
A
= 25°C
3
NEW PRODUCT
2.5
I
D
= 250µA
I
D
= 1mA
2
1.5
-25
0
25
50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
1
-50
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10
V
GS
GATE THRESHOLD VOLTAGE (V)
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
8
V
DS
= 50V
I
D
= 3.3A
6
C
oss
C
rss
4
2
f = 1MHz
0
5
10
15
20
25
30
35
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
40
0
0
2
4
6
8
10
12
14
Q
g
, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
16
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
D = 0.02
0.01
D = 0.01
D = 0.005
Single Pulse
R
JA
(t) = r(t) * R
JA
R
JA
= 126°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Figure 11 Transient Thermal Resistance
10
100
1,000
0.001
0.00001
0.0001
POWERDI is a registered trademark of Diodes Incorporated
DMN10H170SFG
Document number: DS36147 Rev. 4 - 2
4 of 6
www.diodes.com
August 2013
© Diodes Incorporated
DMN10H170SFG
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
POWERDI3333-8
Dim Min Max Typ
D
3.25 3.35 3.30
E
3.25 3.35 3.30
D2
2.22 2.32 2.27
E2
1.56 1.66 1.61
A
0.75 0.85 0.80
A1
0
0.05 0.02
A3
0.203
b
0.27 0.37 0.32
b2
0.20
L
0.35 0.45 0.40
L1
0.39
e
0.65
Z
0.515
All Dimensions in mm
A
A1
D
A3
NEW PRODUCT
D2
L
(4x)
Pin 1 ID
E
E2
1
4
b2
(4x)
8
5
L1
(3x)
Z (4x)
e
b (8x)
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
G
Y2
8
G1
5
Y1
Y
1
Y3
X2
C
4
Dimensions
C
G
G1
Y
Y1
Y2
Y3
X
X2
Value (in mm)
0.650
0.230
0.420
3.700
2.250
1.850
0.700
2.370
0.420
POWERDI is a registered trademark of Diodes Incorporated
DMN10H170SFG
Document number: DS36147 Rev. 4 - 2
5 of 6
www.diodes.com
August 2013
© Diodes Incorporated
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