EGF1A - EGF1D
EGF1A - EGF1D
Features
•
•
•
Low forward voltage drop.
Low profile package.
Fast switching for high efficiency.
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current, @ T
L
= 100°C
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
Value
1A
50
1B
100
1.0
30
-65 to +175
-65 to +175
1C
150
1D
200
Units
V
A
A
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
R
θJL
Power Dissipation
Thermal Resistance, Junction to Ambient*
Thermal Resistance, Junction to Lead*
Parameter
Value
2.0
85
30
Units
W
°C/W
°C/W
*
Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
Symbol
V
F
t
rr
I
R
C
T
T
A
= 25°C unless otherwise noted
Parameter
1A
Forward Voltage @ 1.0 A
Reverse Recovery Time
I
F
= 0.5 A, I
R
= 1.0 A, I
RR
= 0.25 A
Reverse Current @ rated V
R
T
A
= 25°C
T
A
= 100°C
Total Capacitance
V
R
= 4.0 V, f = 1.0 MHz
Device
1B
1.0
50
10
100
15
1C
1D
Units
V
ns
µA
µA
pF
2001
Fairchild Semiconductor Corporation
EGF1A-EGF1D, Rev. D
EGF1A - EGF1D
Typical Characteristics
Average Rectified Forward Current, I
F
[A]
1.6
1.4
100
T
J
= 25
º
C
A
Pulse Width = 300µS
µ
2% Duty Cycle
Forward Current, I
F
[A]
150
175
1.2
1
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
Lead Temperature [ºC]
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED
ON 0.2 x 0.2"
(5.0 x 5.0 mm)
COPPER PAD AREAS
10
1
0.1
0.01
0.2
0.4
0.6
0.8
1
1.2
Forward Voltage, V
F
[V]
1.4
1.6
Figure 1. Forward Current Derating Curve
Peak Forward Surge Current, I
FSM
[A]
40
Figure 2. Forward Voltage Characteristics
1000
T
A
= 100
º
C
20
Reverse Current, I
R
[mA]
30
100
10
T
J
= 25
º
C
A
10
1
0
1
2
5
10
20
Number of Cycles at 60Hz
50
100
0.1
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage [%]
Figure 3. Non-Repetitive Surge Current
60
Total Capacitance, C
T
[pF]
50
40
30
20
10
0
0.1
Figure 4. Reverse Current vs Reverse Voltage
0.5 1 2
5 10 20 50 100
Reverse Voltage, V
R
[V]
500
Figure 5. Total Capacitance
50Ω
NONINDUCTIVE
50Ω
NONINDUCTIVE
+0.5A
(-)
trr
DUT
50V
(approx)
50Ω
NONINDUCTIVE
Pulse
Generator
(Note 2)
(+)
OSCILLOSCOPE
(Note 1)
0
-0.25A
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
-1.0A
1.0cm
SET TIME BASE FOR
5/ 10 ns/ cm
Reverse Recovery Time Characterstic and Test Circuit Diagram
2001
Fairchild Semiconductor Corporation
EGF1A-EGF1D, Rev. D
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E
2
CMOS
TM
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®
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®
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effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4