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1N4797A

Description
Variable Capacitance Diode, 56pF C(T), Silicon, Abrupt, DO-7,
CategoryDiscrete semiconductor    diode   
File Size57KB,1 Pages
ManufacturerAPI Technologies
Websitehttp://www.apitech.com/about-api
Download Datasheet Parametric View All

1N4797A Overview

Variable Capacitance Diode, 56pF C(T), Silicon, Abrupt, DO-7,

1N4797A Parametric

Parameter NameAttribute value
package instructionO-LALF-W2
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance10%
Minimum diode capacitance ratio1.7857
Nominal diode capacitance56 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JEDEC-95 codeDO-7
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.4 W
Certification statusNot Qualified
minimum quality factor15
Maximum repetitive peak reverse voltage15 V
Maximum reverse current5e-9 µA
Reverse test voltage15 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Varactor Diode ClassificationABRUPT
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