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FDP6021P

Description
28 A, 20 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
CategoryDiscrete semiconductor    The transistor   
File Size74KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

FDP6021P Overview

28 A, 20 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB

FDP6021P Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)28 A
Maximum drain current (ID)28 A
Maximum drain-source on-resistance0.03 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)37 W
Maximum pulsed drain current (IDM)80 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
FDP6021P/FDB6021P
April 2001
PRELIMINARY
FDP6021P/FDB6021P
20V P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This P-Channel power MOSFET uses Fairchild’s low
voltage PowerTrench process. It has been optimized for
power management applications.
Features
–28 A, –20 V. R
DS(ON)
= 30 mΩ @ V
GS
= 4.5 V
R
DS(ON)
= 40 mΩ @ V
GS
= 2.5 V
R
DS(ON)
= 65 mΩ @ V
GS
= 1.8 V
Critical DC electrical parameters specified at
elevated temperature
High performance trench technology for extremely
low R
DS(ON)
175°C maximum junction temperature rating
Applications
Battery management
Load switch
Voltage regulator
.
D
G
S
G
G
D
S
TO-220
FDP Series
S
TO-263AB
FDB Series
D
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
–20
±
8
(Note 1)
(Note 1)
Units
V
V
A
W
W°C
°C
–28
–80
37
0.25
–65 to +175
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
4
62.5
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDP6021P
FDB6021P
Device
FDP6021P
FDB6021P
Reel Size
Tube
13”
Tape width
n/a
24mm
Quantity
45
800 units
2001
Fairchild Semiconductor Corporation
FDP6021P/FDB6021P Rev B(W)

FDP6021P Related Products

FDP6021P FDB6021P
Description 28 A, 20 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB 28 A, 20 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
Is it Rohs certified? incompatible conform to
Maker Fairchild Fairchild
Parts packaging code TO-220AB D2PAK
package instruction FLANGE MOUNT, R-PSFM-T3 TO-263AB, 3 PIN
Contacts 3 4
Reach Compliance Code compliant _compli
ECCN code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 20 V 20 V
Maximum drain current (Abs) (ID) 28 A 28 A
Maximum drain current (ID) 28 A 28 A
Maximum drain-source on-resistance 0.03 Ω 0.03 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-263AB
JESD-30 code R-PSFM-T3 R-PSSO-G2
JESD-609 code e0 e3
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260
Polarity/channel type P-CHANNEL P-CHANNEL
Maximum power dissipation(Abs) 37 W 37 W
Maximum pulsed drain current (IDM) 80 A 80 A
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal surface Tin/Lead (Sn/Pb) Matte Tin (Sn)
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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