FDP6021P/FDB6021P
April 2001
PRELIMINARY
FDP6021P/FDB6021P
20V P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This P-Channel power MOSFET uses Fairchild’s low
voltage PowerTrench process. It has been optimized for
power management applications.
Features
•
–28 A, –20 V. R
DS(ON)
= 30 mΩ @ V
GS
= 4.5 V
R
DS(ON)
= 40 mΩ @ V
GS
= 2.5 V
R
DS(ON)
= 65 mΩ @ V
GS
= 1.8 V
•
Critical DC electrical parameters specified at
elevated temperature
•
High performance trench technology for extremely
low R
DS(ON)
•
175°C maximum junction temperature rating
Applications
•
Battery management
•
Load switch
•
Voltage regulator
.
D
G
S
G
G
D
S
TO-220
FDP Series
S
TO-263AB
FDB Series
D
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
–20
±
8
(Note 1)
(Note 1)
Units
V
V
A
W
W°C
°C
–28
–80
37
0.25
–65 to +175
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
4
62.5
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDP6021P
FDB6021P
Device
FDP6021P
FDB6021P
Reel Size
Tube
13”
Tape width
n/a
24mm
Quantity
45
800 units
2001
Fairchild Semiconductor Corporation
FDP6021P/FDB6021P Rev B(W)
FDP6021P/FDB6021P
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= –250
µA
I
D
= –250
µA,Referenced
to 25°C
V
DS
= –16 V,
V
GS
= 8 V,
V
GS
= –8 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
Min
–20
Typ
Max Units
V
Off Characteristics
–16
–1
100
–100
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
, I
D
= –250
µA
I
D
= –250
µA,Referenced
to 25°C
V
GS
= –4.5 V, I
D
= –14 A
V
GS
= –2.5 V, I
D
= –12 A
V
GS
= –1.8 V, I
D
= –10 A
V
GS
= –4.5V, I
D
= –14 A, T
J
=125°C
V
GS
= –4.5 V, V
DS
= –5 V
V
DS
= –5 V,
I
D
= –14 A
–0.4
–0.7
3
24
31
50
30
–1.5
V
mV/°C
30
40
65
42
mΩ
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–40
33
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
1890
302
124
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
Notes:
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –10 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
Ω
13
10
80
50
23
20
128
80
28
ns
ns
ns
ns
nC
nC
nC
V
DS
= –10 V,
V
GS
= –4.5 V
I
D
= –14 A,
20
4
7
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V, I
S
= –14 A
Voltage
–0.9
–28
–1.3
A
V
1.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2.
TO-220 package is supplied in tube / rail @ 45 pieces per rail.
3.
Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A
FDP6021P/FDB6021P Rev. B(W)
FDP6021P/FDB6021P
Typical Characteristics
40
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.4
V
GS
= -4.5V
-3.5V
-I
D
, DRAIN CURRENT (A)
30
2.2
-3.0V
-2.5V
-2.0V
V
GS
= -1.8V
2
1.8
1.6
1.4
1.2
1
0.8
20
-2.0V
-1.8V
10
-2.5V
-3.0V
-3.5V
-4.5V
-1.5V
0
0
1
2
3
4
5
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
0
10
20
-I
D
, DRAIN CURRENT (A)
30
40
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.09
R
DS(ON)
, ON-RESISTANCE (OHM)
1.5
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
-50
-25
0
25
50
75
100
o
I
D
= -14A
V
GS
= -4.5V
I
D
= -7A
0.07
0.05
T
A
= 125
o
C
0.03
T
A
= 25
o
C
125
150
175
0.01
1
2
3
4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
5
T
J
, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation
withTemperature.
30
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
T
A
= -55
o
C
o
25
o
C
125 C
-I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= -5V
25
-I
D
, DRAIN CURRENT (A)
20
15
10
5
0
0.5
1
1.5
V
GS
= 0V
10
1
0.1
0.01
0.001
0.0001
T
A
= 125
o
C
25
o
C
-55
o
C
2
2.5
0
0.2
0.4
0.6
0.8
1
1.2
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP6021P/FDB6021P Rev. B(W)
FDP6021P/FDB6021P
Typical Characteristics
5
-V
GS
, GATE-SOURCE VOLTAGE (V)
3000
I
D
=-14A
V
DS
= -5V
-10V
2500
CAPACITANCE (pF)
C
ISS
2000
1500
1000
500
C
RSS
0
0
5
10
15
20
25
4
f = 1MHz
V
GS
= 0 V
-15V
3
2
C
OSS
1
0
Q
g
, GATE CHARGE (nC)
0
5
10
15
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
Figure 8. Capacitance Characteristics.
1000
100µs
1ms
10ms
100ms
1s
DC
P(pk), PEAK TRANSIENT POWER (W)
R
DS(ON)
LIMIT
-I
D
, DRAIN CURRENT (A)
800
SINGLE PULSE
R
θJC
= 4°C/W
T
A
= 25°C
600
10
400
V
GS
= -4.5V
SINGLE PULSE
R
θJC
= 4
o
C/W
T
A
= 25 C
1
1
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
o
200
0
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
R
θJA
(t) = r(t) + R
θJA
R
θJC
= 4 °C/W
0.2
0.1
0.1
0.05
0.02
0.01
P(pk)
t
1
t
2
SINGLE PULSE
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
FDP6021P/FDB6021P Rev. B(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
DISCLAIMER
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H2
京公网安备 11010802033920号
EEWORLD
