AUIRF3710ZS datasheet, PDF - EEWORLD Datasheet

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AUIRF3710ZS: DescriptionTactile Switches 2.6x1.6mm 1.6N 0.11mm travel IP67; CategoryDiscrete semiconductor The transistor; File Size321KB，14 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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Tactile Switches 2.6x1.6mm 1.6N 0.11mm travel IP67

AUIRF3710ZS Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	ROHS COMPLIANT, D2PAK-3
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	16 weeks
Avalanche Energy Efficiency Rating (Eas)	200 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	59 A
Maximum drain current (ID)	59 A
Maximum drain-source on-resistance	0.018 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-XSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	160 W
Maximum pulsed drain current (IDM)	240 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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PD - 97470

AUTOMOTIVE GRADE

Features

Low On-Resistance

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

AUIRF3710Z

AUIRF3710ZS

HEXFET

Power MOSFET

DSS

= 100V

DS(on)

= 18mΩ

Description

Specifically designed for Automotive applications,

this HEXFET

Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistance per silicon area. Additional fea-

tures of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating . These features com-

bine to make this design an extremely efficient

and reliable device for use in Automotive applica-

tions and a wide variety of other applications.

= 59A

TO-220AB

AUIRF3710Z

Pak

AUIRF3710ZS

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;

and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure

to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation

ratings are measured under board mounted and still air conditions. Ambient temperature (T

) is 25°C, unless otherwise specified.

Parameter

@ T

= 25°C

@ T

= 100°C

= 25°C

(tested)

STG

Continuous Drain Current, V

@ 10V

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

Max.

240

160

1.1

± 20

170

200

See Fig.12a,12b,15,16

-55 to + 175

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Units

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy Tested Value

Avalanche Current

W/°C

°C

Single Pulse Avalanche Energy (Thermally limited)

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

Thermal Resistance

θJC

θCS

θJA

Junction-to-Case

Parameter

Typ.

–––

0.50

–––

Max.

0.92

–––

Units

°C/W

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient (PCB Mount, steady state)

HEXFET

is a registered trademark of International Rectifier.

*Qualification

standards can be found at http://www.irf.com/

www.irf.com

3/19/10

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